SuperFET
FCP20N60 / FCPF20N60
TM
600V N-Channel MOSFET
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
• Typ. RDS(on) = 0.15Ω
• Ultra low gate charge (typ. Qg = 75nC)
• Low effective output capacitance (typ. Coss.eff = 165pF)
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
• 100% avalanche tested
• RoHS Compliant
D
{
z
G{
G DS
TO-220
TO-220F
GD S
z
z
{
S
Absolute Maximum Ratings
Symbol
Parameter
FCP20N60
FCPF20N60
600
Unit
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
20
A
EAR
Repetitive Avalanche Energy
(Note 1)
20.8
mJ
(Note 3)
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(TC = 25°C)
- Derate above 25°C
V
20
12.5
20*
12.5*
A
A
60
60*
A
± 30
V
690
mJ
4.5
V/ns
208
1.67
39
0.3
W
W/°C
-55 to +150
°C
300
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCP20N60
FCPF20N60
Unit
RθJC
Thermal Resistance, Junction-to-Case
0.6
3.2
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2008 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. A2
1
www.fairchildsemi.com
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
December 2008
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCP20N60
FCP20N60
TO-220
-
-
50
FCPF20N60
FCPF20N60
TO-220F
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250µA, TJ = 150°C
--
650
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.6
--
V/°C
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 20A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.15
0.19
Ω
--
17
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 10A
gFS
Forward Transconductance
VDS = 40V, ID = 10A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
2370
3080
pF
--
1280
1665
pF
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
--
95
--
pF
--
65
85
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
165
--
pF
VDD = 300V, ID = 20A
RG = 25Ω
--
62
135
ns
--
140
290
ns
--
230
470
ns
--
65
140
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 20A
VGS = 10V
(Note 4, 5)
--
75
98
nC
--
13.5
18
nC
--
36
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
20
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 20A
--
--
1.4
V
trr
Reverse Recovery Time
--
530
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 20A
dIF/dt =100A/µs
--
10.5
--
µC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCP20N60 / FCPF20N60 Rev. A2
2
www.fairchildsemi.com
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
VGS
2
10
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID , Drain Current [A]
ID, Drain Current [A]
Top :
0
10
25°C
-55°C
0
10
Notes :
1. 250µs Pulse Test
2. TC = 25°C
-1
0
10
Note
1. VDS = 40V
2. 250µs Pulse Test
2
1
10
150°C
1
10
10
4
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8
2
10
IDR , Reverse Drain Current [A]
0.3
VGS = 10V
0.2
VGS = 20V
0.1
1
10
150°C
0
25°C
10
Notes :
1. VGS = 0V
2. 250µs Pulse Test
Note : TJ = 25°C
0.0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
10000
VGS, Gate-Source Voltage [V]
7000
Coss
5000
4000
Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
3000
2000
Crss
1000
0
-1
10
0
10
10
1.6
1
10
VDS = 250V
VDS = 400V
8
6
4
2
Note : ID = 20A
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FCP20N60 / FCPF20N60 Rev. A2
1.4
VDS = 100V
Crss = Cgd
6000
1.2
12
Coss = Cds + Cgd
8000
1.0
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
9000
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.4
RDS(ON) [Ω],
Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 20 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
TJ, Junction Temperature [°C]
Figure 9-1. Maximum Safe Operating Area
for FCP20N60
10
2
10
1
50
100
150
Figure 9-2. Maximum Safe Operating Area
for FCPF20N60
Operation in This Area
is Limited by R DS(on)
10
2
10
1
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
ID, Drain Current [A]
100 us
1 ms
10 ms
DC
10
0
Notes :
1. TC = 25°C
-1
10
2. TJ = 150°C
100 us
1 ms
10 ms
100 ms
10
0
DC
Notes :
1. TC = 25°C
-1
10
2. TJ = 150°C
3. Single Pulse
3. Single Pulse
-2
10
10
200
TJ, Junction Temperature [°C]
-2
0
1
2
10
10
3
10
10
10
VDS, Drain-Source Voltage [V]
0
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
25
ID, Drain Current [A]
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [°C]
FCP20N60 / FCPF20N60 Rev. A2
4
www.fairchildsemi.com
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FCP20N60
ZθJC(t), Thermal Response
10
0
D = 0 .5
10
N o te s :
1 . Z θ JC (t) = 0 .6 ° C /W M a x.
0 .2
-1
2 . D u ty F a c to r , D = t 1 /t 2
0 .1
3 . T JM - T C = P D M * Z θ JC (t)
0 .0 5
0 .0 2
PDM
0 .0 1
10
-2
t1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FCPF20N60
ZθJC(t), Thermal Response
D = 0 .5
10
0
0 .2
0 .1
N o te s :
1 . Z θ J C ( t) = 3 .2 ° C /W M a x .
0 .0 5
10
-1
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .0 2
0 .0 1
PDM
s in g le p u ls e
10
t1
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]
FCP20N60 / FCPF20N60 Rev. A2
5
www.fairchildsemi.com
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
FCP20N60 / FCPF20N60 Rev. A2
VDS (t)
VDD
DUT
10V
ID (t)
tp
6
Time
www.fairchildsemi.com
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
FCP20N60 / FCPF20N60 Rev. A2
7
www.fairchildsemi.com
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Mechanical Dimensions
TO - 220
Dimensions in Millimeters
FCP20N60 / FCPF20N60 Rev. A2
8
www.fairchildsemi.com
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FCP20N60 / FCPF20N60 Rev. A2
9
www.fairchildsemi.com
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Mechanical Dimensions
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
FCP20N60 / FCPF20N60 Rev. A2
10
www.fairchildsemi.com
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
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