SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: SMBT3906 (PNP) 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 60 Emitter-base voltage VEBO 6 DC collector current IC 200 mA Total power dissipation, TS = 69 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 245 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-18-2002 SMBT3904/ MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. V(BR)CEO 40 - - V(BR)CBO 60 - - V(BR)EBO 6 - - ICBO - - 50 DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current nA VCB = 30 V, IE = 0 - hFE DC current gain 1) IC = 100 µA, VCE = 1 V 40 - - IC = 1 mA, VCE = 1 V 70 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - V VCEsat Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA - - 0.2 IC = 50 mA, IB = 5 mA - - 0.3 IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 VBEsat Base-emitter saturation voltage 1) 1) Pulse test: t ≤=300µs, D = 2% 2 Feb-18-2002 SMBT3904/ MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 300 - - MHz pF AC Characteristics Transition frequency fT IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance Ccb - - 4 Ceb - - 8 F - - 5 dB h11e 1 - 10 k h12e 0.5 - 8 10-4 h21e 100 400 - - h22e 1 - 40 S td - - 35 ns tr - - 35 tstg - - 200 tf - - 50 VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 100 µA, VCE = 5 V, RS = 1 k, f = 1 kHz, f = 200 Hz Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA 3 Feb-18-2002 SMBT3904/ MMBT3904 Test circuits Delay and rise time +3.0 V 300 ns 275 Ω D = 2% +10.9 V 0 10 k Ω C -0.5 V <4.0 pF <1.0 ns EHN00061 Storage and fall time +3.0 V t1 10 < t 1 < 500 µs D = 2% 275 Ω +10.9 V 0 -9.1 V 10 kΩ C 1N916 <1.0 ns <4.0 pF EHN00062 4 Feb-18-2002 SMBT3904/ MMBT3904 Total power dissipation Ptot = f(TS) Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 360 mW ΙC 300 mA 10 2 270 P tot EHP00756 2 5 240 V BE V CE 210 180 10 1 150 120 5 90 60 30 0 0 15 30 45 60 75 90 105 120 10 0 °C 150 TS 0.2 0 0.4 0.6 Permissible pulse load DC current gain hFE = f (I C) Ptotmax / PtotDC = f (tp ) VCE = 10V, normalized 0.8 1.0 V 1.2 V BE sat , V CE sat EHP00935 10 3 EHP00765 10 1 Ptot max Ptot DC D= tp T tp h FE T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 125 C 25 C 10 0 -55 C 5 5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 -1 s 10 0 tp 10 -1 5 10 0 5 10 1 mA 10 2 2 ΙC 5 Feb-18-2002 SMBT3904/ MMBT3904 Short-circuit forward current Open-circuit output admittance transfer ratio h21e = f(IC) h22e = f (IC) VCE = 10V, f = 1MHz VCE = 10V, f = 1MHz EHP00759 10 3 EHP00760 10 2 µs h 21e h 22e 5 5 10 2 10 1 5 5 10 1 -1 10 5 10 0 mA 10 10 0 -1 10 1 5 10 0 mA ΙC ΙC Delay time td = f (IC ) 10 1 Storage time t stg = f(IC) Rise time tr = f (IC) EHP00761 10 3 EHP00762 10 3 ns ns t r ,t d tr td ts 25 C 125 C h FE = 10 10 2 h FE = 20 10 10 2 VCC = 3 V h FE = 20 10 40 V 15 V 10 1 10 1 V BE = 2 V 0V 10 0 0 10 5 10 1 5 10 2 mA 10 10 0 0 10 3 5 10 1 5 10 2 mA 10 3 ΙC ΙC 6 Feb-18-2002 SMBT3904/ MMBT3904 Fall time tf = f (IC) Rise time tr = f (IC) EHP00763 10 3 EHP00764 10 3 ns ns tr tf 25 C 125 C 25 C VCC = 40 V 10 2 10 2 VCC = 40 V h FE = 10 125 C h FE = 20 h FE = 10 10 1 10 0 0 10 5 10 1 10 1 5 10 2 10 0 0 10 mA 10 3 5 10 1 5 10 2 ΙC ΙC Input impedance Open-circuit reverse voltage h11e = f (IC) transfer ratio h12e = f (I C) VCE = 10V, f = 1kHz VCE = 10V, f = 1kHz EHP00757 10 2 h 11e mA 10 3 kΩ EHP00758 10 -3 h 12e 10 1 5 10 -4 5 10 0 5 10 -1 10 -1 5 10 0 mA 10 -5 10 1 10 -1 5 10 0 mA 10 1 ΙC ΙC 7 Feb-18-2002