L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only FEATURES * High current transfer ratio ( CTR : MIN. 1000% at IF = 1mA, VCE = 2V ) * High input-output isolation voltage ( Viso = 5,000Vrms ) * High collector-emitter voltage ( VCEO = 300V ) * Dual-in-line package : LTV-852 : 1-channel type LTV-8D52 : 2-channel type * Wide lead spacing package : LTV-852M : 1-channel type LTV-8D52M : 2-channel type * Surface mounting package : LTV-852S : 1-channel type LTV-8D52S : 2-channel type * Tape and reel packaging : LTV-852S-TA1, LTV-8D52S-TA1, LTV-852S-TA, LTV-8D52-TA * UL approved ( No. E113898 ) * TUV approved ( No. R9653630 ) * CSA approved ( No. CA91533-1 ) * FIMKO approved ( No. 202944 ) * NEMKO approved ( No. P98101736 ) * DEMKO approved ( No. 307924 ) * SEMKO approved ( No. 9833166 / 01-20 ) * VDE approved ( No. 094722 ) Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 1 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only OUTLINE DIMENSIONS LTV-852 : LTV-8D52 : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 2 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only OUTLINE DIMENSIONS LTV-852M : LTV-8D52M : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 3 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only OUTLINE DIMENSIONS LTV-852S : LTV-8D52S : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 4 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only TAPING DIMENSIONS LTV-852S-TA1 : LTV-8D52S-TA1 : Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 16 ± 0.3 ( .63 ) 4 ± 0.1 ( .15 ) 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) 12 ± 0.1 ( .472 ) Page : 5 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only TAPING DIMENSIONS LTV-852S-TA : LTV-8D52S-TA : Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 16 ± 0.3 ( .63 ) 4 ± 0.1 ( .15 ) 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) 12 ± 0.1 ( .472 ) Page : 6 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER SYMBOL RATING UNIT Forward Current IF 50 mA Reverse Voltage VR 6 V Power Dissipation P 70 mW Collector - Emitter Voltage VCEO 300 V Emitter - Collector Voltage VECO 0.1 V Collector Current IC 150 mA Collector Power Dissipation PC 150 mW Ptot 200 mW Viso 5,000 Vrms Operating Temperature Topr -30 ~ +100 °C Storage Temperature Tstg -55 ~ +125 °C Tsol 260 °C INPUT OUTPUT Total Power Dissipation *1 Isolation Voltage *2 Soldering Temperature *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 7 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER INPUT OUTPUT SYMBOL MIN. TYP. MAX. UNIT Forward Voltage VF — 1.2 1.4 V IF=10mA Reverse Current IR — — 10 µA VR=4V Terminal Capacitance Ct — 30 250 pF V=0, f=1KHz Collector Dark Current ICEO — — 200 nA VCE=200V, IF=0 Collector-Emitter Breakdown Voltage BVCEO 300 — — V IC=0.1mA IF=0 Emitter-Collector Breakdown Voltage BVECO 0.1 — — V IE=10µA IF=0 IC 10 40 150 mA Collector Current TRANSFER CHARACTERISTICS *1 CTR = CONDITIONS *1 Current Transfer Ratio CTR 1,000 4,000 15,000 Collector-Emitter Saturation Voltage VCE(sat) Isolation Resistance Riso Floating Capacitance Cf — Cut-Off Frequency fc Response Time (Rise) Response Time (Fall) % IF=1mA VCE=2V 1.2 V IF=20mA IC=100mA — Ω DC500V 40 ~ 60% R.H. 0.6 1 pF V=0, f=1MHz 1 7 — kHz tr — 100 300 µs tf — 20 100 µs — — 5×1010 1×1011 VCE=2V, IC=20mA RL=100Ω, -3dB VCC=2V, IC=20mA RL=100Ω IC × 100% IF Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 8 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only CHARACTERISTICS CURVES Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation Pc (mW) Forward current I F (mA) 60 50 40 30 20 10 0 -30 0 25 50 75 100 125 200 150 100 50 0 -30 o 4 3 100 o 2.5 2 1.5 1 o o 80 C 40 C o 20 C o 60 C 10 0.5 0 0 1 2 3 4 1 5 0.5 0.7 0.9 1.1 7000 Fig.6 Collector Current vs. Collector-emitter Voltage 100 VCE=2V Collector current Ic (mA) 6000 5000 4000 3000 2000 1000 0 0.1 1 1.3 1.5 1.7 1.9 Forward voltage (V) Fig.5 Current Transfer Ratio vs. Forward Current Current transfer ratio CTR (%) 80 100 C Forward current IF (mA) 10 Forward current (mA) Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 60 100 Ic=5mA 10mA 30mA 50mA 70mA 100mA 3.5 40 Fig.4 Forward Current vs. Forward Voltage Forward current (mA) Collector-emitter saturation voltage V (sat) (V) 5 20 Ambient temperature Ta ( C) Fig.3 Collector-emitter saturation Voltage vs. Forward current 4.5 0 o Ambient temperature Ta ( C) 2.5mA 10mA 5mA 80 3mA 2mA 1.5mA 60 1mA P C (MAX.) 40 20 0 I F=0.5mA 0 1 2 3 4 5 Collector-emitter voltage V CE(V) Page : 9 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only CHARACTERISTICS CURVES Relative current transfer ratio (%) 1.0 Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature I F =1mA VCE=2V 0.8 0.6 0.4 0.2 0 20 40 60 80 Collector-emitter saturation voltage VCE (sat) (V) Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature 100 1.20 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 Ambient temperature Ta ( C) 60 80 100 Fig.10 Response Time vs. Load Resistance 1000 VCE =200V 500 Response time ( s) Collector dark current I CEO (nA) 40 O Fig.9 Collector Dark Current vs. Temperature 100 VCE=2V I C=20mA tr 200 100 tf 50 td ts 20 10 5 2 10 20 40 60 80 1 100 0.1 O Fig.11 Frequency Response Test Circuit for Response Time Vcc 0 10 1 Load resistance R L (k ) Ambient temperature Ta ( C) Voltage gain Av (dB) 20 Ambient temperature Ta ( C) O 1000 I F=20mA Ic=100mA 1.10 VCE=2V I C=20mA -5 Input RD RL Input Output Output 10% td -10 tr -15 R L =1k 100 90% ts tf Test Circuit for Frequency Response 10 Vcc -20 RD -25 0.1 1 10 100 RL Output 500 Frequency f (kHz) Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 10 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit : mm 4 PIN Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 8 PIN Page : 11 of 11