LITEON LTV-8D52S-TA Property of lite-on only Datasheet

L IT E - O N T E C HN OLOGY C OR P OR A TI ON
Property of LITE-ON Only
FEATURES
* High current transfer ratio
( CTR : MIN. 1000% at IF = 1mA, VCE = 2V )
* High input-output isolation voltage
( Viso = 5,000Vrms )
* High collector-emitter voltage
( VCEO = 300V )
* Dual-in-line package :
LTV-852 : 1-channel type
LTV-8D52 : 2-channel type
* Wide lead spacing package :
LTV-852M : 1-channel type
LTV-8D52M : 2-channel type
* Surface mounting package :
LTV-852S : 1-channel type
LTV-8D52S : 2-channel type
* Tape and reel packaging :
LTV-852S-TA1, LTV-8D52S-TA1, LTV-852S-TA, LTV-8D52-TA
* UL approved ( No. E113898 )
* TUV approved ( No. R9653630 )
* CSA approved ( No. CA91533-1 )
* FIMKO approved ( No. 202944 )
* NEMKO approved ( No. P98101736 )
* DEMKO approved ( No. 307924 )
* SEMKO approved ( No. 9833166 / 01-20 )
* VDE approved ( No. 094722 )
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
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L IT E - O N T E C HN OLOGY C OR P OR A TI ON
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-852 :
LTV-8D52 :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
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L IT E - O N T E C HN OLOGY C OR P OR A TI ON
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-852M :
LTV-8D52M :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
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3 of 11
L IT E - O N T E C HN OLOGY C OR P OR A TI ON
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-852S :
LTV-8D52S :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
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4 of 11
L IT E - O N T E C HN OLOGY C OR P OR A TI ON
Property of LITE-ON Only
TAPING DIMENSIONS
LTV-852S-TA1 :
LTV-8D52S-TA1 :
Description
Tape wide
Pitch of sprocket holes
Distance of compartment
Distance of compartment to compartment
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Symbol
W
P0
F
P2
P1
Dimensions in mm ( inches )
16 ± 0.3 ( .63 )
4 ± 0.1 ( .15 )
7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
12 ± 0.1 ( .472 )
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L IT E - O N T E C HN OLOGY C OR P OR A TI ON
Property of LITE-ON Only
TAPING DIMENSIONS
LTV-852S-TA :
LTV-8D52S-TA :
Description
Tape wide
Pitch of sprocket holes
Distance of compartment
Distance of compartment to compartment
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Symbol
W
P0
F
P2
P1
Dimensions in mm ( inches )
16 ± 0.3 ( .63 )
4 ± 0.1 ( .15 )
7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
12 ± 0.1 ( .472 )
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ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER
SYMBOL
RATING
UNIT
Forward Current
IF
50
mA
Reverse Voltage
VR
6
V
Power Dissipation
P
70
mW
Collector - Emitter Voltage
VCEO
300
V
Emitter - Collector Voltage
VECO
0.1
V
Collector Current
IC
150
mA
Collector Power Dissipation
PC
150
mW
Ptot
200
mW
Viso
5,000
Vrms
Operating Temperature
Topr
-30 ~ +100
°C
Storage Temperature
Tstg
-55 ~ +125
°C
Tsol
260
°C
INPUT
OUTPUT
Total Power Dissipation
*1 Isolation Voltage
*2 Soldering Temperature
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
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ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER
INPUT
OUTPUT
SYMBOL MIN. TYP. MAX. UNIT
Forward Voltage
VF
—
1.2
1.4
V
IF=10mA
Reverse Current
IR
—
—
10
µA
VR=4V
Terminal Capacitance
Ct
—
30
250
pF
V=0, f=1KHz
Collector Dark Current
ICEO
—
—
200
nA
VCE=200V, IF=0
Collector-Emitter
Breakdown Voltage
BVCEO
300
—
—
V
IC=0.1mA
IF=0
Emitter-Collector
Breakdown Voltage
BVECO
0.1
—
—
V
IE=10µA
IF=0
IC
10
40
150
mA
Collector Current
TRANSFER
CHARACTERISTICS
*1 CTR =
CONDITIONS
*1 Current Transfer Ratio
CTR
1,000 4,000 15,000
Collector-Emitter
Saturation Voltage
VCE(sat)
Isolation Resistance
Riso
Floating Capacitance
Cf
—
Cut-Off Frequency
fc
Response Time (Rise)
Response Time (Fall)
%
IF=1mA
VCE=2V
1.2
V
IF=20mA
IC=100mA
—
Ω
DC500V
40 ~ 60% R.H.
0.6
1
pF
V=0, f=1MHz
1
7
—
kHz
tr
—
100
300
µs
tf
—
20
100
µs
—
—
5×1010 1×1011
VCE=2V, IC=20mA
RL=100Ω, -3dB
VCC=2V, IC=20mA
RL=100Ω
IC
× 100%
IF
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
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L IT E - O N T E C HN OLOGY C OR P OR A TI ON
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CHARACTERISTICS CURVES
Fig.1 Forward Current vs.
Ambient Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Collector power dissipation Pc (mW)
Forward current I F (mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
200
150
100
50
0
-30
o
4
3
100
o
2.5
2
1.5
1
o
o
80 C
40 C
o
20 C
o
60 C
10
0.5
0
0
1
2
3
4
1
5
0.5 0.7 0.9 1.1
7000
Fig.6 Collector Current vs.
Collector-emitter Voltage
100
VCE=2V
Collector current Ic (mA)
6000
5000
4000
3000
2000
1000
0
0.1
1
1.3 1.5 1.7 1.9
Forward voltage (V)
Fig.5 Current Transfer Ratio vs. Forward
Current
Current transfer ratio CTR (%)
80
100 C
Forward current IF (mA)
10
Forward current (mA)
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
60
100
Ic=5mA
10mA
30mA
50mA
70mA
100mA
3.5
40
Fig.4 Forward Current vs. Forward
Voltage
Forward current (mA)
Collector-emitter saturation voltage
V (sat) (V)
5
20
Ambient temperature Ta ( C)
Fig.3 Collector-emitter saturation
Voltage vs. Forward current
4.5
0
o
Ambient temperature Ta ( C)
2.5mA
10mA
5mA
80
3mA
2mA
1.5mA
60
1mA
P C (MAX.)
40
20
0
I F=0.5mA
0
1
2
3
4
5
Collector-emitter voltage V CE(V)
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L IT E - O N T E C HN OLOGY C OR P OR A TI ON
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CHARACTERISTICS CURVES
Relative current transfer ratio (%)
1.0
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
I F =1mA
VCE=2V
0.8
0.6
0.4
0.2
0
20
40
60
80
Collector-emitter saturation voltage
VCE (sat) (V)
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
100
1.20
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
Ambient temperature Ta ( C)
60
80
100
Fig.10 Response Time vs. Load
Resistance
1000
VCE =200V
500
Response time ( s)
Collector dark current I CEO (nA)
40
O
Fig.9 Collector Dark Current vs.
Temperature
100
VCE=2V
I C=20mA
tr
200
100
tf
50
td
ts
20
10
5
2
10
20
40
60
80
1
100
0.1
O
Fig.11 Frequency Response
Test Circuit for Response Time
Vcc
0
10
1
Load resistance R L (k )
Ambient temperature Ta ( C)
Voltage gain Av (dB)
20
Ambient temperature Ta ( C)
O
1000
I F=20mA
Ic=100mA
1.10
VCE=2V
I C=20mA
-5
Input
RD
RL
Input
Output
Output
10%
td
-10
tr
-15
R L =1k
100
90%
ts
tf
Test Circuit for Frequency Response
10
Vcc
-20
RD
-25
0.1
1
10
100
RL
Output
500
Frequency f (kHz)
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Page : 10 of 11
L IT E - O N T E C HN OLOGY C OR P OR A TI ON
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
4 PIN
Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
8 PIN
Page : 11 of 11
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