ON MCH6660-TL-W Complementary dual power mosfet Datasheet

MCH6660
Power MOSFET
20V, 136mΩ, 2A, –20V, 266mΩ, –1.5A Complementary Dual
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Features
• ON-resistance Nch : RDS(on)1=105mW(typ.)
Pch : RDS(on)1=205mW(typ.)
• Pb-Free, Halogen Free and RoHS Compliance
• Ultrasmall Package MCPH6(2.0mm×2.1mm×0.85mmt)
• Nch MOSFET and Pch MOSFET are put in MCPH6 Package
•
•
1.8V Drive
ESD Diode - Protected Gate
Applications
•
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
20
--20
Gate-to-Source Voltage
VGSS
±10
±10
V
Drain Current (DC)
ID
2
--1.5
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
8
--6
Power Dissipation
PD
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Junction Temperature
Tj
Storage Temperature
Tstg
0.8
V
A
W
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7022A-006
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
4
Marking
0 to 0.02
1
2
3
0.65
XM
LOT No.
TL
0.3
Electrical Connection
0.85
0.25
Packing Type : TL
LOT No.
0.07
MCH6660-TL-H
MCH6660-TL-W
0.15
2.1
1.6
0.25
2.0
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
MCPH6
6
5
4
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
©Semiconductor Components Industries, LLC, 2014
December 2014 - Rev. 2
1
Publication Order Nunber:
MCH6660/D
MCH6660
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Value
Conditions
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
Gate Threshold Voltage
VDS=10V, ID=1mA
Forward Transconductance
VGS(th)
gFS
VDS=10V, ID=1A
1.9
RDS(on)1
RDS(on)2
ID=1A, VGS=4.5V
ID=0.5A, VGS=2.5V
105
136
mW
Static Drain-to-Source On-State Resistance
147
205
mW
RDS(on)3
ID=0.3A, VGS=1.8V
212
318
mW
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
20
V
0.4
1
mA
±10
mA
1.3
V
S
128
pF
28
pF
Crss
21
pF
td(on)
tr
5.1
ns
11
ns
14.5
ns
VDS=10V, f=1MHz
See specified Test Circuit.
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
IS=2A, VGS=0V
V(BR)DSS
IDSS
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
--20
VDS=--10V, ID=--1mA
--0.4
VDS=10V, VGS=4.5V, ID=2A
12
ns
1.8
nC
0.3
nC
0.55
0.85
nC
1.2
V
--1
mA
±10
mA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V
Forward Transconductance
IGSS
VGS(th)
gFS
VDS=--10V, ID=--750mA
1.9
RDS(on)1
RDS(on)2
ID=--750mA, VGS=--4.5V
ID=--300mA, VGS=--2.5V
205
266
Static Drain-to-Source On-State Resistance
295
413
RDS(on)3
ID=--100mA, VGS=--1.8V
430
645
Gate Threshold Voltage
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
--1.4
V
S
mW
mW
mW
120
pF
26
pF
Crss
20
pF
Turn-ON Delay Time
td(on)
5.3
ns
Rise Time
tr
9.7
ns
Turn-OFF Delay Time
td(off)
16
ns
Fall Time
tf
14
ns
Total Gate Charge
Qg
1.7
nC
0.28
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--1.5A
0.47
IS=--1.5A, VGS=0V
--0.89
nC
--1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Symbol
Value
RθJA
156.3
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2
Unit
°C/W
MCH6660
Switching Time Test Circuit
[N-channel]
VDD=10V
VIN
0V
--4.5V
VDD= --10V
VIN
ID=1A
RL=10Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
D
PW=10μs
D.C.≤1%
G
50Ω
ID -- VDS
V
1.8
2.5V
4.5V
50Ω
2.5
S
ID -- VGS
[Nch]
VDS=10V
2.0
1.0
0.5
VGS=1.2V
1.5
1.0
°C
Drain Current, ID -- A
1.5V
Ta
=7
5
6.0V
[Nch]
Ta=25°C
8.0V
0.5
25°
C
Drain Current, ID -- A
MCH6660
P.G
S
2.0
1.5
VOUT
G
MCH6660
P.G
ID= --750mA
RL=13.3Ω
VIN
--25
°C
4.5V
0V
[P-channel]
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
[Nch]
1A
200
150
100
50
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
9
0.4
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) -- Ta
400
250
0
0.2
Gate-to-Source Voltage, VGS -- V
0.5A
300
0
IT16372
Ta=25°C
ID=0.3A
350
0
1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
0.9
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3
[Nch]
300
A
=0.3
V, I D
250
=1.8
VGS
0.5A
, I D=
2.5V
=
VGS
=1.0A
.5V, I D
4
=
V GS
200
150
100
50
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
IT16645
2.0
IT16373
350
0
--60
10
1.8
120
140
160
IT16646
MCH6660
[Nch]
VDS=10V
5
2
=
Ta
1.0
7
5
3
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
SW Time -- ID
1000
7
5
0.01
7
5
3
2
0.001
5 7 10
IT16376
100
7
5
[Nch]
VDD=10V
VGS=4.5V
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
Ciss
7
5
10
5 7 10
0
10
7
5
Drain Current, ID -- A
3.0
2.5
2.0
3
2
1.0
1.2
1.4
1.6
ms
2
3
5 7 1.0
8V
20
IT16379
[Nch]
0m
op
s
tio
n
2
3
5 7 10
3
2
ID -- VGS
--2.0
5 7 100
IT16647
[Pch]
VDS= --10V
--1.8
--1
.
18
10
0μ
s
1m
s
Drain-to-Source Voltage, VDS -- V
--1.6
VGS= --1.0V
--0.8
--0.6
--0.4
--0.4
--0.2
--0.2
0
--0.1 --0.2
--0.3 --0.4 --0.5 --0.6
--0.7 --0.8
Drain-to-Source Voltage, VDS -- V
0
--0.9 --1.0
5°C
--0.6
--1.0
Ta=
7
--0.8
--1.2
°C
--1.0
--1.4
--2
5
V
--1.5
--1.2
25
°C
Drain Current, ID -- A
--2
.
5V
--1.6
--1.4
0
16
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
0.01
0.1
2.0
[Pch]
5V
--3
.
V
--4.
5V
--8.0
--1.8
14
Operation in this
area is limited by RDS(on).
IT16380
ID -- VDS
--2.0
1.8
12
10
era
2
0.5
0.8
10
10
DC
3
1.0
0.6
8
ID=2A
1.0
7
5
0.1
7
5
1.5
0.4
6
IDP=8A (PW≤10μs)
2
0.2
4
SOA
3
0
2
Drain-to-Source Voltage, VDS -- V
[Nch]
Total Gate Charge, Qg -- nC
Drain Current, ID -- A
Coss
Crss
3
3.5
0
[Nch]
f=1MHz
100
VDS=10V
ID=2A
4.0
1.2
IT16377
2
IT16644
VGS -- Qg
1.0
Ciss, Coss, Crss -- VDS
2
2
0.8
3
3
2
4.5
0.6
5
tr
td(on)
0.4
7
td(off)
10
7
5
0.2
1000
tf
3
2
0
Forward Diode Voltage, VSD -- V
3
2
1.0
0.01
Gate-to-Source Voltage, VGS -- V
0.1
7
5
3
2
2
0.1
0.01
Switching Time, SW Time -- ns
5°C
--2
C
75°
°C
25
[Nch]
VGS=0V
1.0
7
5
3
2
Source Current, IS -- A
3
Ciss, Coss, Crss -- pF
Forward Transconductance, gFS -- S
7
IS -- VSD
10
7
5
3
2
Ta=
75°
C
25°C
--25°
C
gFS -- ID
10
0
--0.5
--1.0
--1.5
--2.0
--2.5
Gate-to-Source Voltage, VGS -- V
IT14614
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4
--3.0
IT14615
MCH6660
RDS(on) -- VGS
[Pch]
600
ID= --0.1A
500
--0.3A
400
--0.75A
300
200
100
0
--1
--2
--3
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
gFS -- ID
.3A
=
VGS
300
--0
, I D=
--2.5V
5A
--0.7
V, I D=
--4.5
V GS=
200
100
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
IT16648
[Pch]
VDS= --10V
140
160
IT16649
IS -- VSD
5
[Pch]
VGS=0V
3
3
2
7
5
3
2
3
2
--0.1
7
5
C
C
5°
--2
=
C
Ta
75°
1.0
--1.0
7
5
25°C --25
°
°C
25
5°C
2
3
2
0.1
7
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Drain Current, ID -- A
SW Time -- ID
5
3
2
--0.01
3
[Pch]
VDD= --10V
VGS= --4.5V
5
--0.6
--0.8
--1.0
--1.2
HD14619
[Pch]
f=1MHz
2
Ciss
tr
7
--0.4
Ciss, Coss, Crss -- VDS
3
tf
10
--0.2
Forward Diode Voltage, VSD -- V
td (off)
2
0
HD14618
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
=
VGS
400
A
--0.1
=
V, I D
--1.8
500
0
--60
--10
Source Current, IS -- A
Forward Transconductance, gFS -- S
5
--9
[Pch]
600
Ta=
7
0
RDS(on) -- Ta
700
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
700
td(on)
3
100
7
5
Coss
Crss
3
2
2
10
2
--0.1
3
5
7
2
--1.0
Drain Current, ID -- A
[Pch]
--10
7
5
--4
--6
--8
--10
--3.5
2
--3.0
--2.5
--2.0
--0.5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Total Gate Charge, Qg -- nC
1.6
1.8
DC
--16
IT14622
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5
s
--18
--20
IT14621
[Pch]
10
0μ
s
0m
s
op
Operation in
this area is
limited by RDS(on).
ati
on
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
--0.01
--0.1
2.0
ms
10
er
2
1m
10
ID= --1.5A
3
--1.0
0
--14
SOA
--1.0
7
5
--0.1
7
5
--1.5
0
--12
IDP= --6A (PW≤10μs)
3
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--2
Drain-to-Source Voltage, VDS -- V
VDS= --10V
ID= --1.5A
--4.0
0
HD141104
VGS -- Qg
--4.5
7
3
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 --100
HD16650
MCH6660
PD -- Ta
Power Dissipation, PD -- W
1.0
[Nch/Pch]
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
Thermal Resistance, RθJA -- ºC/W
Ambient Temperature, Ta -- °C
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
RθJA -- Pulse Time
Thermal Resistance, RθJA -- ºC/W
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
[Nch]
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
lse
le Pu
Sing
0.1
0.000001 2
1000
7
5
3
2
160
HD16651
When mounted on ceramic substrate
(900mm2×0.8mm)1unit
3
5 70.00001 2
3
5 7 0.0001
2
3
5 7 0.001
2
3
5 7 0.01
2
3
Pulse Time, PT -- s
5 7 0.1
2
3
5 7 1.0
2
3
RθJA -- Pulse Time
5 7 10
HD141121
[Pch]
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
lse
le Pu
Sing
0.1
0.000001 2
When mounted on ceramic substrate
(900mm2×0.8mm)1unit
3
5 70.00001 2
3
5 7 0.0001
2
3
5 7 0.001
2
3
5 7 0.01
Pulse Time, PT -- s
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6
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
HD141121
MCH6660
Paclage Dimensions
unit : mm
MCH6660-TL-H, MCH6660-TL-W
SC-88FL / MCPH6
CASE 419AS
ISSUE O
Recommended Soldering
Footprint
2.1
0.6
0.4
0.65 0.65
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7
MCH6660
ORDERING INFORMATION
Device
MCH6660-TL-H
MCH6660-TL-W
Package
Shipping
memo
MCPH6
3,000pcs./reel
Pb-Free and Halogen Free
Note on usage : Since the MCH6660 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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