MCH6660 Power MOSFET 20V, 136mΩ, 2A, –20V, 266mΩ, –1.5A Complementary Dual www.onsemi.com Features • ON-resistance Nch : RDS(on)1=105mW(typ.) Pch : RDS(on)1=205mW(typ.) • Pb-Free, Halogen Free and RoHS Compliance • Ultrasmall Package MCPH6(2.0mm×2.1mm×0.85mmt) • Nch MOSFET and Pch MOSFET are put in MCPH6 Package • • 1.8V Drive ESD Diode - Protected Gate Applications • General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 20 --20 Gate-to-Source Voltage VGSS ±10 ±10 V Drain Current (DC) ID 2 --1.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 8 --6 Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1unit Junction Temperature Tj Storage Temperature Tstg 0.8 V A W 150 °C --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7022A-006 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 4 Marking 0 to 0.02 1 2 3 0.65 XM LOT No. TL 0.3 Electrical Connection 0.85 0.25 Packing Type : TL LOT No. 0.07 MCH6660-TL-H MCH6660-TL-W 0.15 2.1 1.6 0.25 2.0 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 MCPH6 6 5 4 1 2 3 ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. ©Semiconductor Components Industries, LLC, 2014 December 2014 - Rev. 2 1 Publication Order Nunber: MCH6660/D MCH6660 Electrical Characteristics at Ta=25°C Parameter Symbol Value Conditions min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V Gate Threshold Voltage VDS=10V, ID=1mA Forward Transconductance VGS(th) gFS VDS=10V, ID=1A 1.9 RDS(on)1 RDS(on)2 ID=1A, VGS=4.5V ID=0.5A, VGS=2.5V 105 136 mW Static Drain-to-Source On-State Resistance 147 205 mW RDS(on)3 ID=0.3A, VGS=1.8V 212 318 mW Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time 20 V 0.4 1 mA ±10 mA 1.3 V S 128 pF 28 pF Crss 21 pF td(on) tr 5.1 ns 11 ns 14.5 ns VDS=10V, f=1MHz See specified Test Circuit. Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Forward Diode Voltage VSD IS=2A, VGS=0V V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V --20 VDS=--10V, ID=--1mA --0.4 VDS=10V, VGS=4.5V, ID=2A 12 ns 1.8 nC 0.3 nC 0.55 0.85 nC 1.2 V --1 mA ±10 mA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V Forward Transconductance IGSS VGS(th) gFS VDS=--10V, ID=--750mA 1.9 RDS(on)1 RDS(on)2 ID=--750mA, VGS=--4.5V ID=--300mA, VGS=--2.5V 205 266 Static Drain-to-Source On-State Resistance 295 413 RDS(on)3 ID=--100mA, VGS=--1.8V 430 645 Gate Threshold Voltage Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.4 V S mW mW mW 120 pF 26 pF Crss 20 pF Turn-ON Delay Time td(on) 5.3 ns Rise Time tr 9.7 ns Turn-OFF Delay Time td(off) 16 ns Fall Time tf 14 ns Total Gate Charge Qg 1.7 nC 0.28 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--1.5A 0.47 IS=--1.5A, VGS=0V --0.89 nC --1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm2×0.8mm) 1unit Symbol Value RθJA 156.3 www.onsemi.com 2 Unit °C/W MCH6660 Switching Time Test Circuit [N-channel] VDD=10V VIN 0V --4.5V VDD= --10V VIN ID=1A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT D PW=10μs D.C.≤1% G 50Ω ID -- VDS V 1.8 2.5V 4.5V 50Ω 2.5 S ID -- VGS [Nch] VDS=10V 2.0 1.0 0.5 VGS=1.2V 1.5 1.0 °C Drain Current, ID -- A 1.5V Ta =7 5 6.0V [Nch] Ta=25°C 8.0V 0.5 25° C Drain Current, ID -- A MCH6660 P.G S 2.0 1.5 VOUT G MCH6660 P.G ID= --750mA RL=13.3Ω VIN --25 °C 4.5V 0V [P-channel] 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS [Nch] 1A 200 150 100 50 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RDS(on) -- Ta 400 250 0 0.2 Gate-to-Source Voltage, VGS -- V 0.5A 300 0 IT16372 Ta=25°C ID=0.3A 350 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 0.9 www.onsemi.com 3 [Nch] 300 A =0.3 V, I D 250 =1.8 VGS 0.5A , I D= 2.5V = VGS =1.0A .5V, I D 4 = V GS 200 150 100 50 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C IT16645 2.0 IT16373 350 0 --60 10 1.8 120 140 160 IT16646 MCH6660 [Nch] VDS=10V 5 2 = Ta 1.0 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 1000 7 5 0.01 7 5 3 2 0.001 5 7 10 IT16376 100 7 5 [Nch] VDD=10V VGS=4.5V 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A Ciss 7 5 10 5 7 10 0 10 7 5 Drain Current, ID -- A 3.0 2.5 2.0 3 2 1.0 1.2 1.4 1.6 ms 2 3 5 7 1.0 8V 20 IT16379 [Nch] 0m op s tio n 2 3 5 7 10 3 2 ID -- VGS --2.0 5 7 100 IT16647 [Pch] VDS= --10V --1.8 --1 . 18 10 0μ s 1m s Drain-to-Source Voltage, VDS -- V --1.6 VGS= --1.0V --0.8 --0.6 --0.4 --0.4 --0.2 --0.2 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --0.9 --1.0 5°C --0.6 --1.0 Ta= 7 --0.8 --1.2 °C --1.0 --1.4 --2 5 V --1.5 --1.2 25 °C Drain Current, ID -- A --2 . 5V --1.6 --1.4 0 16 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.01 0.1 2.0 [Pch] 5V --3 . V --4. 5V --8.0 --1.8 14 Operation in this area is limited by RDS(on). IT16380 ID -- VDS --2.0 1.8 12 10 era 2 0.5 0.8 10 10 DC 3 1.0 0.6 8 ID=2A 1.0 7 5 0.1 7 5 1.5 0.4 6 IDP=8A (PW≤10μs) 2 0.2 4 SOA 3 0 2 Drain-to-Source Voltage, VDS -- V [Nch] Total Gate Charge, Qg -- nC Drain Current, ID -- A Coss Crss 3 3.5 0 [Nch] f=1MHz 100 VDS=10V ID=2A 4.0 1.2 IT16377 2 IT16644 VGS -- Qg 1.0 Ciss, Coss, Crss -- VDS 2 2 0.8 3 3 2 4.5 0.6 5 tr td(on) 0.4 7 td(off) 10 7 5 0.2 1000 tf 3 2 0 Forward Diode Voltage, VSD -- V 3 2 1.0 0.01 Gate-to-Source Voltage, VGS -- V 0.1 7 5 3 2 2 0.1 0.01 Switching Time, SW Time -- ns 5°C --2 C 75° °C 25 [Nch] VGS=0V 1.0 7 5 3 2 Source Current, IS -- A 3 Ciss, Coss, Crss -- pF Forward Transconductance, gFS -- S 7 IS -- VSD 10 7 5 3 2 Ta= 75° C 25°C --25° C gFS -- ID 10 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V IT14614 www.onsemi.com 4 --3.0 IT14615 MCH6660 RDS(on) -- VGS [Pch] 600 ID= --0.1A 500 --0.3A 400 --0.75A 300 200 100 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V gFS -- ID .3A = VGS 300 --0 , I D= --2.5V 5A --0.7 V, I D= --4.5 V GS= 200 100 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT16648 [Pch] VDS= --10V 140 160 IT16649 IS -- VSD 5 [Pch] VGS=0V 3 3 2 7 5 3 2 3 2 --0.1 7 5 C C 5° --2 = C Ta 75° 1.0 --1.0 7 5 25°C --25 ° °C 25 5°C 2 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A SW Time -- ID 5 3 2 --0.01 3 [Pch] VDD= --10V VGS= --4.5V 5 --0.6 --0.8 --1.0 --1.2 HD14619 [Pch] f=1MHz 2 Ciss tr 7 --0.4 Ciss, Coss, Crss -- VDS 3 tf 10 --0.2 Forward Diode Voltage, VSD -- V td (off) 2 0 HD14618 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns = VGS 400 A --0.1 = V, I D --1.8 500 0 --60 --10 Source Current, IS -- A Forward Transconductance, gFS -- S 5 --9 [Pch] 600 Ta= 7 0 RDS(on) -- Ta 700 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 td(on) 3 100 7 5 Coss Crss 3 2 2 10 2 --0.1 3 5 7 2 --1.0 Drain Current, ID -- A [Pch] --10 7 5 --4 --6 --8 --10 --3.5 2 --3.0 --2.5 --2.0 --0.5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC 1.6 1.8 DC --16 IT14622 www.onsemi.com 5 s --18 --20 IT14621 [Pch] 10 0μ s 0m s op Operation in this area is limited by RDS(on). ati on Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.1 2.0 ms 10 er 2 1m 10 ID= --1.5A 3 --1.0 0 --14 SOA --1.0 7 5 --0.1 7 5 --1.5 0 --12 IDP= --6A (PW≤10μs) 3 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --2 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --1.5A --4.0 0 HD141104 VGS -- Qg --4.5 7 3 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 HD16650 MCH6660 PD -- Ta Power Dissipation, PD -- W 1.0 [Nch/Pch] When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Thermal Resistance, RθJA -- ºC/W Ambient Temperature, Ta -- °C 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 RθJA -- Pulse Time Thermal Resistance, RθJA -- ºC/W 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 [Nch] Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 lse le Pu Sing 0.1 0.000001 2 1000 7 5 3 2 160 HD16651 When mounted on ceramic substrate (900mm2×0.8mm)1unit 3 5 70.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 2 3 Pulse Time, PT -- s 5 7 0.1 2 3 5 7 1.0 2 3 RθJA -- Pulse Time 5 7 10 HD141121 [Pch] Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 lse le Pu Sing 0.1 0.000001 2 When mounted on ceramic substrate (900mm2×0.8mm)1unit 3 5 70.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 Pulse Time, PT -- s www.onsemi.com 6 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 HD141121 MCH6660 Paclage Dimensions unit : mm MCH6660-TL-H, MCH6660-TL-W SC-88FL / MCPH6 CASE 419AS ISSUE O Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 www.onsemi.com 7 MCH6660 ORDERING INFORMATION Device MCH6660-TL-H MCH6660-TL-W Package Shipping memo MCPH6 3,000pcs./reel Pb-Free and Halogen Free Note on usage : Since the MCH6660 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 8