4N60 600V N-Channel Power MOSFET ● ● ● ● ● RDS(ON)<2.4Ω @ VGS=10V Fast switching capability Lead free in compliance with EU RoHS directive. Green molding compound PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 ID (A) 4 2.4 @ VGS =10V Case: TO-251,TO-252,TO-220,ITO-220 TO-262,TO-263 Package Pin Definition: 1. Gate 2. Drain 3. Source Ordering Information Package Packing DMP4N60-TU TO-251 75pcs / Tube DMD4N60-TR TO-252 DMD4N60-TU TO-252 2.5Kpcs / 13" Reel 75pcs / Tube DMT4N60-TU TO-220 50pcs / Tube DMF4N60-TU ITO-220 50pcs / Tube DMK4N60-TU TO-262 50pcs / Tube DMG4N60-TU TO-263 50pcs / Tube DMG4N60-TR TO-263 800pcs / 13" Reel Part No. Block Diagram D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS RATINGS 600 ±30 UNIT V V Continuous Drain Current ID 4.0 A Pulsed Drain Current (Note 2) IDM 16 A EAS 217 mJ 106 W 44 W 77 W +150 -55 ~ +150 -55 ~ +150 °C °C °C Avalanche Energy Single Pulsed (Note 3) TO-220/TO-262/TO-263 Power Dissipation ITO-220 PD TO-251/TO-252 Junction Temperature Operating Temperature Storage Temperature TJ TOPR TSTG Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 3.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C May.2015-REV.00 www.dyelec.com 1 / 10 4N60 600V N-Channel Power MOSFET THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/ITO-220 TO-262/TO-263 RATING 62.5 θJA TO-251/ TO-252 110 TO-220/ITO-220 TO-262/TO-263 2.35 ITO-220 UNIT °C/W °C/W 5.5 θJC TO-251/ TO-252 2.9 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse e TEST CONDITIONS MIN TYP MAX UNIT BVDSS VGS = 0V, ID = 250μA IDSS VDS = 600V, VGS = 0V 1 μA VGS = 30V, VDS = 0V 100 -100 nA nA 4.0 2.4 V Ω IGSS 600 V VGS = -30V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA VGS=10V,ID = 2.0A Static Drain-Source On-State Resistance RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 480V,ID= 4.0A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V,IS=4A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 4A, dIF/dt = 100 A/ μs (Note 1) Reverse Recovery Charge QRR 2.0 1.9 550 80 30 pF pF pF 35 80 160 120 80 5 20 ns ns ns ns nC nC nC 400 1.7 1.4 V 4 A 16 A ns μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2.. Essenti ly independent of operating temperature May.2015-REV.00 www.dyelec.com 2 / 10 4N60 600V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms May.2015-REV.00 www.dyelec.com 3 / 10 4N60 600V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit May,2015-REV.00 Time Unclamped Inductive Switching Waveforms www.dyelec.com 4 / 10 4N60 600V N-Channel Power MOSFET Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) TYPICAL CHARACTERISTICS On-State Characteristics VGS 10 Transfer Characteristics 10 Top: op: 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V 25°С 1 5.0V 150°С 1 0.1 Notes: 1.. 50µs Pulse Test 2. TC=25°С 0.1 1 10 Notes: 1. VDS=50V 2. 250µs Pulse Test 0.1 2 6 8 10 Gate-Source Voltage, VGS (V) Drain-to-Source Voltage, VDS (V) May,2015-REV.00 4 www.dyelec.com 5 / 10 4N60 600V N-Channel Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Capacitance Characteristics (Non-Repetitive) 1200 Gate Charge Characteristics 12 Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd 10 1000 Ciss 800 Coss 600 VDS=300V VDS=480V 8 Notes: 1. VGS=0V 2. f = 1MHz VDS=120V 6 4 400 200 2 Crss Note: ID=4A 0 0 0.1 1 0 10 15 20 25 PD (w) Thermal Response, θJC (t) 10 Total Gate Charge, QG (nC) Drain-SourceVoltage, VDS (V) May,2015-REV.00 5 www.dyelec.com 6 / 10 4N60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing ITO-220 Mechanical Drawing May,2015-REV.00 www.dyelec.com 7 / 10 4N60 600V N-Channel Power MOSFET TO-262 Mechanical Drawing TO-263 Mechanical Drawing May,2015-REV.00 www.dyelec.com 8 / 10 4N60 600V N-Channel Power MOSFET TO-251 Mechanical Drawing TO-252 Mechanical Drawing May,2015-REV.00 www.dyelec.com 9 / 10 4N60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. May,2015-REV.00 www.dyelec.com 10 / 10