FCH47N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 47 A, 73 m Features Description • 650 V @TJ = 150 C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology is tailored to minimize conduction loss, provide superior switching performance,dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server / telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Typ. RDS(on) = 58 m • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Cosseff. = 420 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Solar Inverter • AC-DC Power Supply D G TO-247 G D S Absolute Maximum Ratings Symbol S Parameter FCH47N60F_F133 Unit 600 V 47 29.7 A A (Note 1) 141 A 30 V 1800 mJ VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 47 A EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 50 V/ns 417 3.33 W W/C -55 to +150 C 300 C (TC = 25C) - Derate above 25C Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink RJA Thermal Resistance, Junction-to-Ambient ©2010 Fairchild Semiconductor Corporation FCH47N60F Rev. C1 Typ. Max. Unit -- 0.3 C/W 0.24 -- °C/W -- 41.7 C/W www.fairchildsemi.com 1 FCH47N60F — N-Channel FRFET® MOSFET May 2013 Device Marking Device Package Reel Size Tape Width Quantity FCH47N60F FCH47N60F_F133 TO-247 - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Unit VGS = 0V, ID = 250A, TJ = 25C 600 -- -- V VGS = 0V, ID = 250A, TJ = 150C -- 650 -- V ID = 250A, Referenced to 25C -- 0.6 -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage BVDSS / TJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 47A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125C --- --- 10 100 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 23.5A -- 0.062 0.073 gFS Forward Transconductance VDS = 40V, ID = 23.5A -- 40 -- S -- 5900 8000 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 3200 4200 pF -- 250 -- pF VDS = 480V, VGS = 0V, f = 1.0MHz -- 160 -- pF VDS = 0V to 400V, VGS = 0V -- 420 -- pF VDD = 300V, ID = 47A RG = 25 -- 185 430 ns -- 210 450 ns -- 520 1100 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 47A VGS = 10V (Note 4, 5) -- 75 160 ns -- 210 270 nC -- 38 -- nC -- 110 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A -- -- 1.4 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 47A dIF/dt =100A/s (Note 4) -- 240 -- ns -- 2.04 -- C NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 47A, di/dt 1,200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics ©2010 Fairchild Semiconductor Corporation FCH47N60F Rev. C1 www.fairchildsemi.com 2 FCH47N60F — N-Channel FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 2 10 ID , Drain Current [A] 2 1 10 150C 1 -55C * Notes : 1. 250s Pulse Test o 2. TC = 25 C 0 10 -1 0 10 - Note 1. VDS = 40V 0 2. 250s Pulse Test 10 2 1 10 25C 10 10 4 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.25 IDR , Reverse Drain Current [A] RDS(ON) [],Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.20 0.15 VGS = 10V 0.10 VGS = 20V 0.05 2 10 1 10 150C 25C * Notes : 1. VGS = 0V 2. 250s Pulse Test * Note : TJ = 25C 0 0.00 0 20 40 60 80 100 120 140 160 180 10 200 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 25000 1.2 1.4 1.6 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 100V VGS, Gate-Source Voltage [V] Coss 15000 * Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss 5000 Crss 0 -1 10 1.0 Figure 6. Gate Charge Characteristics 20000 10000 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 6 VGS , Gate-Source Voltage [V] 10 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 47A 0 0 10 0 1 10 ©2010 Fairchild Semiconductor Corporation FCH47N60F Rev. C1 50 100 150 200 250 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com 3 FCH47N60F — N-Channel FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250A 0.8 -100 -50 0 50 100 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 23.5 A 0.5 150 0.0 -100 200 -50 0 TJ, Junction Temperature [C] 50 100 150 200 TJ, Junction Temperature [C] Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 Operation in This Area is Limited by R DS(on) 2 40 100 s ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 1 10 DC * Notes : 1. TC = 25C 2. TJ = 150C 3. Single Pulse 0 10 0 10 20 10 -1 10 30 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [C] VDS, Drain-Source Voltage [V] ZJC(t), Thermal Response Figure 11. Transient Thermal Response Curve D = 0 .5 10 -1 * N o te s : 1 . Z J C ( t) = 0 .3 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 0 .1 PDM 0 .0 5 t1 0 .0 2 10 -2 t2 0 .0 1 10 -5 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] ©2010 Fairchild Semiconductor Corporation FCH47N60F Rev. C1 www.fairchildsemi.com 4 FCH47N60F — N-Channel FRFET® MOSFET Typical Performance Characteristics (Continued) FCH47N60F — N-Channel FRFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FCH47N60F Rev. C1 www.fairchildsemi.com 5 FCH47N60F — N-Channel FRFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FCH47N60F Rev. C1 www.fairchildsemi.com 6 FCH47N60F — N-Channel FRFET® MOSFET Physical Dimensions Figure 16. TO-247, Molded, 3-Lead, JEDEC Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 ©2010 Fairchild Semiconductor Corporation FCH47N60F Rev. C1 www.fairchildsemi.com 7 tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FCH47N60F Rev. 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