Fairchild FCH47N60F N-channel superfet frfet mosfet Datasheet

FCH47N60F
N-Channel SuperFET® FRFET® MOSFET
600 V, 47 A, 73 m
Features
Description
• 650 V @TJ = 150 C
SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology
is tailored to minimize conduction loss, provide superior switching performance,dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server / telecom power, FPD
TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and
improve system reliability.
• Typ. RDS(on) = 58 m
• Ultra Low Gate Charge (Typ. Qg = 210 nC)
• Low Effective Output Capacitance (Typ. Cosseff. = 420 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Solar Inverter
• AC-DC Power Supply
D
G
TO-247
G D
S
Absolute Maximum Ratings
Symbol
S
Parameter
FCH47N60F_F133
Unit
600
V
47
29.7
A
A
(Note 1)
141
A
 30
V
1800
mJ
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
47
A
EAR
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
50
V/ns
417
3.33
W
W/C
-55 to +150
C
300
C
(TC = 25C)
- Derate above 25C
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case
RCS
Thermal Resistance, Case-to-Sink
RJA
Thermal Resistance, Junction-to-Ambient
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
Typ.
Max.
Unit
--
0.3
C/W
0.24
--
°C/W
--
41.7
C/W
www.fairchildsemi.com
1
FCH47N60F — N-Channel FRFET® MOSFET
May 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH47N60F
FCH47N60F_F133
TO-247
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 0V, ID = 250A, TJ = 25C
600
--
--
V
VGS = 0V, ID = 250A, TJ = 150C
--
650
--
V
ID = 250A, Referenced to 25C
--
0.6
--
V/C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 47A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125C
---
---
10
100
A
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250A
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 23.5A
--
0.062
0.073

gFS
Forward Transconductance
VDS = 40V, ID = 23.5A
--
40
--
S
--
5900
8000
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
3200
4200
pF
--
250
--
pF
VDS = 480V, VGS = 0V, f = 1.0MHz
--
160
--
pF
VDS = 0V to 400V, VGS = 0V
--
420
--
pF
VDD = 300V, ID = 47A
RG = 25
--
185
430
ns
--
210
450
ns
--
520
1100
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 47A
VGS = 10V
(Note 4, 5)
--
75
160
ns
--
210
270
nC
--
38
--
nC
--
110
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
47
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
141
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 47A
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 47A
dIF/dt =100A/s
(Note 4)
--
240
--
ns
--
2.04
--
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD  47A, di/dt  1,200A/s, VDD  BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width  300s, Duty Cycle  2%
5. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
2
FCH47N60F — N-Channel FRFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
10
2
10
ID , Drain Current [A]
2
1
10
150C
1
-55C
* Notes :
1. 250s Pulse Test
o
2. TC = 25 C
0
10
-1
0
10
- Note
1. VDS = 40V
0
2. 250s Pulse Test
10
2
1
10
25C
10
10
4
VDS, Drain-Source Voltage [V]
8
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.25
IDR , Reverse Drain Current [A]
RDS(ON) [],Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.20
0.15
VGS = 10V
0.10
VGS = 20V
0.05
2
10
1
10
150C
25C
* Notes :
1. VGS = 0V
2. 250s Pulse Test
* Note : TJ = 25C
0
0.00
0
20
40
60
80
100
120
140
160
180
10
200
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
25000
1.2
1.4
1.6
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 100V
VGS, Gate-Source Voltage [V]
Coss
15000
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
5000
Crss
0
-1
10
1.0
Figure 6. Gate Charge Characteristics
20000
10000
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
6
VGS , Gate-Source Voltage [V]
10
VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 47A
0
0
10
0
1
10
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
50
100
150
200
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
3
FCH47N60F — N-Channel FRFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250A
0.8
-100
-50
0
50
100
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 23.5 A
0.5
150
0.0
-100
200
-50
0
TJ, Junction Temperature [C]
50
100
150
200
TJ, Junction Temperature [C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
Operation in This Area
is Limited by R DS(on)
2
40
100 s
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
10 ms
1
10
DC
* Notes :
1. TC = 25C
2. TJ = 150C
3. Single Pulse
0
10
0
10
20
10
-1
10
30
1
2
10
0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [C]
VDS, Drain-Source Voltage [V]
ZJC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
D = 0 .5
10
-1
* N o te s :
1 . Z  J C ( t) = 0 .3  C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z  J C ( t)
0 .2
0 .1
PDM
0 .0 5
t1
0 .0 2
10
-2
t2
0 .0 1
10
-5
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
4
FCH47N60F — N-Channel FRFET® MOSFET
Typical Performance Characteristics (Continued)
FCH47N60F — N-Channel FRFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
5
FCH47N60F — N-Channel FRFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
6
FCH47N60F — N-Channel FRFET® MOSFET
Physical Dimensions
Figure 16. TO-247, Molded, 3-Lead, JEDEC Variation AB
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
7
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
8
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FCH47N60F — N-Channel FRFET® MOSFET
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