AP9468GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
40V
RDS(ON)
7mΩ
ID
G
3
75A
S
▼ RoHS Compliant & Halogen-Free
Description
AP9468 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP9468GJ) are available for low-profile
applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
.
3
Rating
Units
40
V
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
75
A
ID@TC=100℃
Drain Current, VGS @ 10V
57
A
300
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.7
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
4
Value
Units
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
201509104
AP9468GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.01
-
V/℃
VGS=10V, ID=45A
-
-
7
mΩ
VGS=4.5V, ID=30A
-
-
9
mΩ
0.5
-
1.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250uA
RDS(ON)
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=30A
-
75
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=30A
-
36
58
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
VDS=20V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
62
-
ns
td(off)
Turn-off Delay Time
RG=1.0Ω,VGS=10V
-
36
-
ns
tf
Fall Time
RD=0.67Ω
-
16
-
ns
Ciss
Input Capacitance
.
V =0V
-
2235 3580
pF
Coss
Output Capacitance
VDS=25V
-
365
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
325
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
IS=20A, VGS=0V,
-
38
-
ns
dI/dt=100A/µs
-
30
-
nC
GS
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9468GH/J-HF
240
240
160
120
V G = 3.0 V
80
40
160
120
V G =3.0V
80
40
0
0
0.0
2.0
4.0
6.0
8.0
0.0
V DS , Drain-to-Source Voltage (V)
4.0
6.0
8.0
10.0
Fig 2. Typical Output Characteristics
8
2.0
I D =30A
I D =45A
V G =10V
T C =25 o C
1.6
6
.
Normalized RDS(ON)
7
RDS(ON) (mΩ)
2.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
0.8
5
0.4
4
2
4
6
8
25
10
50
75
100
125
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
8.0
T j =25 o C
T j =150 o C
30
7.0
RDS(ON) (mΩ)
IS(A)
10V
7 .0V
5.0V
4.5 V
200
ID , Drain Current (A)
200
ID , Drain Current (A)
T C =150 o C
10V
7.0 V
5.0V
4.5 V
o
T C =25 C
20
V GS =4.5V
6.0
V GS =10V
10
5.0
0
4.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
1.6
0
20
40
60
80
I D , Drain Current (A)
Fig 6. On-Resistance vs. Drain Current
Reverse Diode
3
AP9468GH/J-HF
f=1.0MHz
10000
I D =30A
12
V DS =20V
V DS =25V
V DS =30V
C iss
C (pF)
VGS , Gate to Source Voltage (V)
16
8
1000
C oss
C rss
4
100
0
0
20
40
60
1
80
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
ID (A)
100us
10
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
0
.
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
240
V DS =5V
VG
ID , Drain Current (A)
200
T j =25 o C
T j =150 o C
QG
160
4.5V
QGS
120
QGD
80
40
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9468GH/J-HF
MARKING INFORMATION
TO-251
9468GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
9468GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5