Vishay J308 N-channel jfet Datasheet

J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
J308
SST308
U309
J309
SST309
U310
J310
SST310
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Min (mA)
J308
–1 to –6.5
J309
–1 to –4
–25
8
12
–25
10
J310
12
–2 to –6.5
–25
8
24
SST308
–1 to –6.5
–25
8
12
SST309
–1 to –4
–25
10
12
SST310
–2 to –6.5
–25
8
24
U309
–1 to –4
–25
10
12
U310
–2.5 to –6
–25
10
24
FEATURES
BENEFITS
APPLICATIONS
D Excellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
D Very Low Noise: 2.7 dB @ 450 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D
D
D
D
D
D
D
D
D
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
DESCRIPTION
and is available with tape-and-reel options. The U series
hermetically-sealed TO-206AC (TO-52) package supports full
military processing. (See Military and Packaging Information for
further details.)
The J/SST/U308 series offers superb amplification characteristics.
Of special interest is its high-frequency performance. Even at 450
MHz, this series offers high power gain at low noise.
Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series
TO-236 (SOT-23) package provides surface-mount capabilities
TO-226AA
(TO-92)
D
1
S
2
G
3
For similar dual products packaged in the TO-78, see the
U430/431 data sheet.
TO-206AC
(TO-52)
TO-236
(SOT-23)
D
S
1
3
Top View
J308
J309
J310
S
1
G
2
Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
*Marking Code for TO-236
2
3
D
G and Case
Top View
U309
U310
For applications information see AN104.
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
www.vishay.com
7-1
J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current :
(J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature :
(J/SST Prefixes) . . . . . . . . . . . . . . –55 to 150_C
(U Prefix) . . . . . . . . . . . . . . . . . . . . –65 to 175_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
(J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW
(U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Power Dissipation :
Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)
Limits
J/SST308
Parameter
Symbol
Test Conditions
Typa
V(BR)GSS
IG = –1 mA , VDS = 0 V
–35
VGS(off)
VDS = 10 V, ID = 1 nA
J/SST309
Min Max Min
J/SST310
Max Min
Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain
Currentb
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
IDSS
IGSS
TA = 125_C
–25
–25
V
–1
–6.5
–1
–4
–2
–6.5
V
12
60
12
30
24
60
mA
–0.002
–1
–1
–1
nA
–0.001
–1
–1
–1
mA
VDS = 10 V, VGS = 0 V
VGS = –15 V, VDS = 0 V
–25
IG
VDG = 9 V, ID = 10 mA
–15
pA
rDS(on)
VGS = 0 V, ID = 1 mA
35
W
VGS(F)
IG = 10 mA
VDS = 0 V
J
0.7
1
1
1
V
Dynamic
Common-Source
Forward Transconductance
gfs
Common-Source
Output Conductance
gos
Common-Source
Input Capacitance
Ciss
Common-Source
Reverse Transfer Capacitance
Crss
Equivalent Input
Noise Voltage
en
14
VDS = 10 V, ID = 10 mA
f = 1 kHz
VDS = 10 V
VGS = –10 V
f = 1 MHz
8
10
mS
110
250
250
250
5
5
5
2.5
2.5
2.5
J
4
SST
4
J
1.9
SST
1.9
VDS = 10 V, ID = 10 mA
f = 100 Hz
8
6
mS
pF
nV⁄
√Hz
High Frequency
Common-Gate
Forward Transconductance
f = 105 MHz
gfg
Common-Gate
Output Conductance
gog
Common-Gate Power Gainc
Gpg
Noise Figure
NF
VDS = 10 V
ID = 10 mA
13
f = 105 MHz
0.16
f = 450 MHz
0.55
f = 105 MHz
16
f = 450 MHz
11.5
f = 105 MHz
1.5
f = 450 MHz
2.7
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
www.vishay.com
7-2
14
f = 450 MHz
mS
dB
NZB
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
J/SST/U308 Series
Vishay Siliconix
SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED)
Limits
U309
Parameter
Symbol
Test Conditions
Typa
Min
V(BR)GSS
IG = –1 mA , VDS = 0 V
–35
–25
VGS(off)
VDS = 10 V, ID = 1 nA
IDSS
VDS = 10 V, VGS = 0 V
U310
Max
Min
Max
Unit
–1
–4
–2.5
–6
V
12
30
24
60
mA
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain
Currentb
VGS = –15 V, VDS = 0 V
Gate Reverse Current
Gate Operating Current
IGSS
TA = 125_C
–25
V
–0.002
–0.15
–0.15
nA
–0.001
–0.15
–0.15
mA
IG
VDG = 9 V, ID = 10 mA
–15
pA
Drain-Source On-Resistance
rDS(on)
VGS = 0 V, ID = 1 mA
35
W
Gate-Source Forward Voltage
VGS(F)
IG = 10 mA , VDS = 0 V
0.7
1
1
V
Dynamic
Common-Source
Forward Transconductance
gfs
Common-Source
Output Conductance
gos
Common-Source
Input Capacitance
Ciss
Common-Source
Reverse Transfer Capacitance
Crss
Equivalent Input Noise Voltage
en
14
VDS = 10 V, ID = 10 mA
f = 1 kHz
VDS = 10 V, VGS = –10 V
f = 1 MHz
VDS = 10 V, ID = 10 mA
f = 100 Hz
10
mS
10
110
250
250
4
5
5
1.9
2.5
2.5
mS
pF
nV⁄
√Hz
6
High Frequency
Common-Gate
Forward Transconductance
Common-Gate
Output Conductance
gfg
gog
VDS = 10 V
ID = 10 mA
Common-Gate Power Gainc
Gpg
f = 105 MHz
14
f = 450 MHz
13
f = 105 MHz
0.16
f = 450 MHz
0.55
f = 105 MHz
16
14
14
f = 450 MHz
11.5
10
10
f = 105 MHz
1.5
2
2
f = 450 MHz
2.7
3.5
3.5
mS
dB
Noise Figure
NF
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
NZB
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7-3
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
50
80
40
60
30
gfs
40
20
IDSS
20
10
0
–2
–1
–3
–4
IGSS @ 125_C
100 pA
200 mA
10 pA
10 mA
TA = 25_C
1 pA
IGSS @ 25_C
0.1 pA
0
–5
3
6
9
12
15
VGS(off) – Gate-Source Cutoff Voltage (V)
VDG – Drain-Gate Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
100
300
20
240
60
180
rDS
gos
40
120
20
60
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
gos – Output Conductance (mS)
80
gfs – Forward Transconductance (mS)
VGS(off) = –3 V
0
0
–1
0
–2
–3
–4
VDS = 10 V
f = 1 kHz
16
TA = –55_C
12
25_C
8
125_C
4
0
–5
0.1
1
VGS(off) – Gate-Source Cutoff Voltage (V)
10
ID – Drain Current (mA)
Output Characteristics
Output Characteristics
15
30
VGS(off) = –3 V
VGS(off) = –1.5 V
VGS = 0 V
12
VGS = 0 V
24
ID – Drain Current (mA)
ID – Drain Current (mA)
200 mA
TA = 125_C
1 nA
0
0
rDS(on) – Drain-Source On-Resistance ( Ω )
IG @ ID = 10 mA
IG – Gate Leakage
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
10 nA
gfs – Forward Transconductance (mS)
IDSS – Saturation Drain Current (mA)
100
–0.2 V
9
–0.4 V
6
–0.6 V
–0.8 V
3
–0.4 V
18
–0.8 V
–1.2 V
12
–1.6 V
6
–2.0 V
–2.4 V
–1.0 V
0
0
0
0.2
0.4
0.6
VDS – Drain-Source Voltage (V)
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7-4
0.8
1
0
0.2
0.4
0.6
0.8
1
VDS – Drain-Source Voltage (V)
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
Output Characteristics
20
50
VGS(off) = –1.5 V
VGS(off) = –3 V
VGS = 0 V
VGS = 0 V
40
–0.2 V
12
ID – Drain Current (mA)
ID – Drain Current (mA)
16
–0.4 V
8
–0.6 V
–0.8 V
4
–0.4 V
30
–0.8 V
–1.2 V
20
–1.6 V
10
–2.0 V
–1.0 V
–2.4 V
0
0
0
4
2
6
8
10
0
2
VDS – Drain-Source Voltage (V)
Transfer Characteristics
8
10
100
VGS(off) = –1.5 V
VDS = 10 V
VGS(off) = –3 V
VDS = 10 V
80
ID – Drain Current (mA)
24
ID – Drain Current (mA)
6
Transfer Characteristics
30
TA = –55_C
18
25_C
12
125_C
6
TA = –55_C
60
25_C
40
125_C
20
0
0
0
–0.4
–0.8
–1.2
–1.6
–2
0
–0.6
VGS – Gate-Source Voltage (V)
–1.2
–1.8
–2.4
–3
VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
30
50
24
VDS = 10 V
f = 1 kHz
VGS(off) = –3 V
gfs – Forward Transconductance (mS)
VGS(off) = –1.5 V
gfs – Forward Transconductance (mS)
4
VDS – Drain-Source Voltage (V)
TA = –55_C
25_C
18
125_C
12
6
0
VDS = 10 V
f = 1 kHz
40
TA = –55_C
30
25_C
20
125_C
10
0
0
–0.4
–0.8
–1.2
–1.6
VGS – Gate-Source Voltage (V)
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
–2
0
–0.6
–1.2
–1.8
–2.4
–3
VGS – Gate-Source Voltage (V)
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7-5
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
100
VGS(off) = –1.5 V
60
40
VGS(off) = –3 V
Assume VDD = 15 V, VDS = 5 V
RL +
60
VGS(off) = –1.5 V
20
20
VGS(off) = –3 V
0
1
10
100
0.1
1
10
ID – Drain Current (mA)
ID – Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
15
10
12
VDS = 0 V
9
6
VDS = 5 V
3
f = 1 MHz
Crss – Reverse Feedback Capacitance (pF)
f = 1 MHz
8
6
VDS = 0 V
4
2
VDS = 5 V
0
0
0
–8
–4
–12
–16
–20
0
VGS – Gate-Source Voltage (V)
–8
–4
–12
–16
–20
VGS – Gate-Source Voltage (V)
Input Admittance vs. Frequency
100
Forward Admittance vs. Frequency
100
gig
–gfg
10
(mS)
(mS)
10
big
1
bfg
1
TA = 25_C
VDG = 10 V
ID = 10 mA
Common–Gate
TA = 25_C
VDG = 10 V
ID = 10 mA
Common–Gate
0.1
0.1
100
200
500
f – Frequency (MHz)
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7-6
10 V
ID
40
0
Ciss – Input Capacitance (pF)
g fs R L
AV + 1 ) R g
L os
80
80
AV – Voltage Gain
rDS(on) – Drain-Source On-Resistance ( Ω )
100
1000
100
200
500
1000
f – Frequency (MHz)
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Admittance vs. Frequency
Reverse Admittance vs. Frequency
100
10
TA = 25_C
VDG = 10 V
ID = 10 mA
Common–Gate
TA = 25_C
VDG = 10 V
ID = 10 mA
Common–Gate
10
1
bog
(mS)
(mS)
–brg
+grg
–grg
0.1
gog
1
0.1
0.01
100
200
500
100
1000
200
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
150
20
VGS(off) = –3 V
16
gos – Output Conductance (µS)
Hz
VDS = 10 V
en – Noise Voltage nV /
1000
500
f – Frequency (MHz)
f – Frequency (MHz)
12
ID = 1 mA
8
ID = 10 mA
4
VDS = 10 V
f = 1 kHz
120
90
TA = –55_C
60
25_C
30
125_C
0
0
10
100
1k
f – Frequency (Hz)
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
10 k
100 k
0.1
1
10
ID – Drain Current (mA)
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7-7