Hitachi HL7852G Gaa1as laser diode Datasheet

HL7852G
GaAlAs Laser Diode
Description
The HL7852G is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW)
structure. It is suitable as a light source for optical disk memories, levelers and various other types of
optical equipment. Hermetic sealing of the package assures high reliability.
Features
•
•
•
•
Visible light output: λp = 785 nm Typ
Small beam ellipticity: 9.5:23
High output power: 50 mW (CW)
Built-in monitor photodiode
177
HL7852G
Absolute Maximum Ratings (TC = 25°C)
Item
Symbol
Rated Value
Unit
Optical output power
PO
50
mW
1
Pulsed optical output power
PO (pulse)
60*
LD reverse voltage
VR (LD)
2
V
PD reverse voltage
VR (PD)
30
V
Operating temperature
Topr
–10 to +60
°C
Storage temperature
Tstg
–40 to +85
°C
Note:
mW
1. Maximum 50% duty cycle, maximum 1 µs pulse width
Optical and Electrical Characteristics (TC = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Optical output power
PO
50
—
—
mW
Kink free
Threshold current
Ith
—
45
70
mA
Slope efficiency
η
0.35
0.55
0.7
mW/mA
40 mW/ I (45 mW) – I (5 mW)
Operating current
Iop
—
140
170
mA
PO = 50 mW
LD Operating voltage
Vop
—
2.3
2.7
V
PO = 50 mW
Lasing wavelength
λp
775
785
795
nm
PO = 50 mW
Beam divergence (parallel)
θ//
8
9.5
12
deg.
PO = 50 mW, FWHM
Beam divergence (perpendicular)
θ⊥
18
23
28
deg.
PO = 50 mW, FWHM
Monitor current
Is
25
—
150
µA
PO = 5 mW, VR (PD) = 5 V
Astigmatism
AS
—
5
—
µm
PO = 5 mW, NA = 0.4
178
HL7852G
Typical Characteristic Curves
179
HL7852G
Typical Characteristic Curves (cont)
180
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