ON MCH6336-TL-E P-channel power mosfet 12v, â 5a, 43m, single mcph6 Datasheet

Ordering number : ENA0958A
MCH6336
P-Channel Power MOSFET
http://onsemi.com
–12V, –5A, 43mΩ, Single MCPH6
Features
•
•
Ultrahigh-speed switching
Halogen free compliance
•
•
1.8V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
--12
V
±10
V
Allowable Power Dissipation
ID
IDP
PD
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm2×0.8mm)
--5
A
--20
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7022A-009
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
4
0 to 0.02
1
2
0.3
0.85
1
6
2
5
3
4
YK
TL
3
0.65
Marking
LOT No.
0.25
Packing Type : TL
LOT No.
0.07
MCH6336-TL-E
MCH6336-TL-H
0.15
2.1
1.6
0.25
2.0
Electrical Connection
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
1, 2, 5, 6
3
MCPH6
4
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/13008PE TIIM TC-00001168 No. A0958-1/7
MCH6336
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Conditions
Ratings
min
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±8V, VDS=0V
--12
VDS=--6V, ID=--1mA
VDS=--6V, ID=--3A
--0.4
4.8
ID=--3A, VGS=--4.5V
ID=--1.5A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
typ
Unit
max
V
--10
μA
±10
μA
--1.4
8.1
V
S
33
43
mΩ
47
66
mΩ
68
98
mΩ
660
pF
210
pF
Crss
155
pF
Turn-ON Delay Time
td(on)
7.4
ns
Rise Time
tr
57
ns
Turn-OFF Delay Time
td(off)
72
ns
Fall Time
tf
69
ns
Total Gate Charge
Qg
6.9
nC
Gate-to-Source Charge
Qgs
1.2
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--6V, f=1MHz
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--5A
1.8
IS=--5A, VGS=0V
--0.83
nC
--1.2
V
Switching Time Test Circuit
VDD= --6V
VIN
0V
--4.5V
ID= --3A
RL=2Ω
VIN
D
VOUT
PW=10μs
D.C.≤1%
G
MCH6336
P.G
50Ω
S
Ordering Information
Package
Shipping
memo
MCH6336-TL-E
Device
MCPH6
3,000pcs./reel
Pb Free
MCH6336-TL-H
MCPH6
3,000pcs./reel
Pb Free and Halogen Free
No. A0958-2/7
MCH6336
ID -- VDS
--5
--2
--4
--3
--2
--25°C
Drain Current, ID -- A
--1.5V
Ta=7
5°C
V
--1
--2.5
VDS= --6V
--3.0
V
--4.5V
--3
--8.0V
Drain Current, ID -- A
--4
ID -- VGS
--6
.8 V
--5
--1
25°C
--1
VGS= --1.0V
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
0
--1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
100
80
ID= --0.5A
--1.5A
60
--3.0A
40
20
0
0
--1
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
=
Ta
2
5°C
--2
75
°C
°C
25
1.0
7
5
2
--40
--20
0
20
40
60
80
100
120
140
160
IT12990
IS -- VSD
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.001
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
0
5 7 --10
IT12991
--0.4
--0.6
--0.8
--1.0
--1.2
IT12992
Ciss, Coss, Crss -- VDS
3
VDD= --6V
VGS= --4.5V
7
5
--0.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
f=1MHz
2
3
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
20
--0.01
7
5
3
2
3
0.1
--0.01
40
--10
7
5
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
60
Ambient Temperature, Ta -- °C
10
7
5
--2.5
IT12988
5A
= --0.
8V, I D
.
1
-=
VGS
--1.5A
, I D=
--2.5V
=
V GS
.0A
I = --3
--4.5V, D
V GS=
80
0
--60
--8
VDS= --6V
2
--2.0
100
IT12989
| yfs | -- ID
3
--1.5
RDS(on) -- Ta
120
Ta=25°C
140
--1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
160
--0.5
IT12987
Ta=
75°
C
25°C
--25°
C
0
td(off)
100
7
5
tf
3
2
tr
10
td(on)
7
Ciss
7
5
3
Coss
Crss
2
100
5
3
--0.01
1000
7
5
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
2
3
5 7 --10
IT12993
0
--2
--4
--6
--8
--10
Drain-to-Source Voltage, VDS -- V
--12
IT12994
No. A0958-3/7
MCH6336
VGS -- Qg
5
3
2
VDS= --6V
ID= --5A
--4.0
--3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
7
IT12995
PD -- Ta
1.6
Allowable Power Dissipation, PD -- W
6
--10
7
5
ASO
IDP= --20A
ID= --5A
DC
3
2
op
0m
s
n(
Ta
=2
5
tio
--1.0
7
5
3
2
--0.1
7
5
3
2
10
era
PW≤10μs
10
0μ
1m s
10 s
ms
Operation in this area
is limited by RDS(on).
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (1200mm2✕0.8mm)
--0.01
--0.01
2
3
5 7 --0.1
2 3
5 7 --1.0
2
3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
IT12996
When mounted on ceramic substrate
(1200mm2✕0.8mm)
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12997
No. A0958-4/7
MCH6336
Taping Specification
MCH6336-TL-E, MCH6336-TL-H
No. A0958-5/7
MCH6336
Outline Drawing
MCH6336-TL-E, MCH6336-TL-H
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No. A0958-6/7
MCH6336
Note on usage : Since the MCH6336 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0958-7/7
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