STMicroelectronics M29W200BB90N6T 2 mbit (256kb x8 or 128kb x16, boot block) low voltage single supply flash memory Datasheet

M29W200BT
M29W200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
■
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■
ACCESS TIME: 55ns
■
PROGRAMMING TIME
– 10µs per Byte/Word typical
■
44
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
■
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
1
TSOP48 (N)
12 x 20mm
SO44 (M)
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
■
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■
Figure 1. Logic Diagram
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■
TEMPORARY BLOCK UNPROTECTION
MODE
■
LOW POWER CONSUMPTION
VCC
17
– Standby and Automatic Standby
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
20 YEARS DATA RETENTION
■
A0-A16
DQ0-DQ14
DQ15A–1
W
– Defectivity below 1 ppm/year
E
ELECTRONIC SIGNATURE
G
– Manufacturer Code: 0020h
15
M29W200BT
M29W200BB
BYTE
RB
RP
– Top Device Code M29W200BT: 0051h
– Bottom Device Code: M29W200BB 0057h
■
ECOPACK® PACKAGES AVAILABLE
VSS
AI02948
September 2005
1/22
M29W200BT, M29W200BB
Figure 2. TSOP Connections
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
W
RP
NC
NC
RB
NC
NC
A7
A6
A5
A4
A3
A2
A1
Figure 3. SO Connections
1
48
12 M29W200BT 37
13 M29W200BB 36
24
25
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
NC
RB
NC
A7
A6
A5
A4
A3
A2
A1
A0
E
VSS
G
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
44
43
2
3
42
4
41
40
5
6
39
7
38
8
37
9
36
10
35
11 M29W200BT 34
12 M29W200BB 33
13
32
14
31
15
30
16
29
28
17
27
18
26
19
25
20
21
24
22
23
RP
W
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
AI02945
AI02944
Table 1. Signal Names
A0-A16
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
VCC
Supply Voltage
VSS
Ground
NC
Not Connected Internally
2/22
SUMMARY DESCRIPTION
The M29W200B is a 2 Mbit (256Kb x8 or 128Kb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory defaults to its
Read mode where it can be read in the same way
as a ROM or EPROM. The M29W200B is fully
backward compatible with the M29W200.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are written to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
M29W200BT, M29W200BB
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (2)
Input or Output Voltage
–0.6 to 4
V
VCC
Supply Voltage
–0.6 to 4
V
VID
Identification Voltage
–0.6 to 13.5
V
TA
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
Table 3. Top Boot Block Addresses
M29W200BT
#
Size
(Kbytes)
6
16
5
8
4
8
3
32
2
Address Range
(x8)
Table 4. Bottom Boot Block Addresses
M29W200BB
Address Range
(x16)
#
Size
(Kbytes)
Address Range
(x8)
Address Range
(x16)
3C000h-3FFFFh
1E000h-1FFFFh
6
64
30000h-3FFFFh
18000h-1FFFFh
3A000h-3BFFFh
1D000h-1DFFFh
5
64
20000h-2FFFFh
10000h-17FFFh
38000h-39FFFh
1C000h-1CFFFh
4
64
10000h-1FFFFh
08000h-0FFFFh
30000h-37FFFh
18000h-1BFFFh
3
32
08000h-0FFFFh
04000h-07FFFh
64
20000h-2FFFFh
10000h-17FFFh
2
8
06000h-07FFFh
03000h-03FFFh
1
64
10000h-1FFFFh
08000h-0FFFFh
1
8
04000h-05FFFh
02000h-02FFFh
0
64
00000h-0FFFFh
00000h-07FFFh
0
16
00000h-03FFFh
00000h-01FFFh
The blocks in the memory are asymmetrically arranged, see Tables 3 and 4, Block Addresses. The
first or last 64 Kbytes have been divided into four
additional blocks. The 16 Kbyte Boot Block can be
used for small initialization code to start the microprocessor, the two 8 Kbyte Parameter Blocks can
be used for parameter storage and the remaining
32K is a small Main Block where the application
may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.
They allow simple connection to most microprocessors, often without additional logic.
The memory is offered in TSOP48 (12 x 20mm)
and SO44 packages and it is supplied with all the
bits erased (set to ’1’).
In order to meet environmental requirements, ST
offers the M29W200B in ECOPACK® packages.
ECOPACK packages are Lead-free. The category
of second Level Interconnect is marked on the
package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
3/22
M29W200BT, M29W200BB
SIGNAL DESCRIPTIONS
See Figure 1, Logic Diagram, and Table 1, Signal
Names, for a brief overview of the signals connected to this device.
Address Inputs (A0-A16). The Address Inputs
select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the
Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ7). The Data Inputs/Outputs output the data stored at the selected
address during a Bus Read operation. During Bus
Write operations they represent the commands
sent to the Command Interface of the internal state
machine.
Data Inputs/Outputs (DQ8-DQ14). The Data Inputs/Outputs output the data stored at the selected
address during a Bus Read operation when BYTE
is High, VIH. When BYTE is Low, VIL, these pins
are not used and are high impedance. During Bus
Write operations the Command Register does not
use these bits. When reading the Status Register
these bits should be ignored.
Data Input/Output or Address Input (DQ15A-1).
When BYTE is High, VIH, this pin behaves as a
Data Input/Output pin (as DQ8-DQ14). When
BYTE is Low, VIL, this pin behaves as an address
pin; DQ15A–1 Low will select the LSB of the Word
on the other addresses, DQ15A–1 High will select
the MSB. Throughout the text consider references
to the Data Input/Output to include this pin when
BYTE is High and references to the Address Inputs to include this pin when BYTE is Low except
when stated explicitly otherwise.
Chip Enable (E). The Chip Enable, E, activates
the memory, allowing Bus Read and Bus Write operations to be performed. When Chip Enable is
High, VIH, all other pins are ignored.
Output Enable (G). The Output Enable, G, controls the Bus Read operation of the memory.
Write Enable (W). The Write Enable, W, controls
the Bus Write operation of the memory’s Command Interface.
Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to
apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected.
A Hardware Reset is achieved by holding Reset/
Block Temporary Unprotect Low, VIL, for at least
tPLPX. After Reset/Block Temporary Unprotect
goes High, VIH, the memory will be ready for Bus
Read and Bus Write operations after tPHEL or
4/22
tRHEL, whichever occurs last. See the Ready/Busy
Output section, Table 17 and Figure 11, Reset/
Temporary Unprotect AC Characteristics for more
details.
Holding RP at VID will temporarily unprotect the
protected Blocks in the memory. Program and
Erase operations on all blocks will be possible.
The transition from VIH to VID must be slower than
tPHPHH.
Ready/Busy Output (RB). The Ready/Busy pin
is an open-drain output that can be used to identify
when the memory array can be read. Ready/Busy
is high-impedance during Read mode, Auto Select
mode and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write
operations cannot begin until Ready/Busy becomes high-impedance. See Table 17 and Figure
11, Reset/Temporary Unprotect AC Characteristics.
During Program or Erase operations Ready/Busy
is Low, VOL. Ready/Busy will remain Low during
Read/Reset commands or Hardware Resets until
the memory is ready to enter Read mode.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Byte/Word Organization Select (BYTE). The Byte/
Word Organization Select pin is used to switch between the 8-bit and 16-bit Bus modes of the memory. When Byte/Word Organization Select is Low,
VIL, the memory is in 8-bit mode, when it is High,
VIH, the memory is in 16-bit mode.
VCC Supply Voltage. The VCC Supply Voltage
supplies the power for all operations (Read, Program, Erase etc.).
The Command Interface is disabled when the VCC
Supply Voltage is less than the Lockout Voltage,
VLKO. This prevents Bus Write operations from accidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memory contents being altered will be invalid.
A 0.1µF capacitor should be connected between
the VCC Supply Voltage pin and the VSS Ground
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during program and
erase operations, ICC3.
VSS Ground. The VSS Ground is the reference for
all voltage measurements.
M29W200BT, M29W200BB
BUS OPERATIONS
There are five standard bus operations that control
the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See
Tables 5 and 6, Bus Operations, for a summary.
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Bus Read. Bus Read operations read from the
memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, VIL, to Chip Enable
and Output Enable and keeping Write Enable
High, VIH. The Data Inputs/Outputs will output the
value, see Figure 8, Read Mode AC Waveforms,
and Table 14, Read AC Characteristics, for details
of when the output becomes valid.
Bus Write. Bus Write operations write to the
Command Interface. A valid Bus Write operation
begins by setting the desired address on the Address Inputs. The Address Inputs are latched by
the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs are latched by the Command Interface on the rising edge of Chip Enable
or Write Enable, whichever occurs first. Output Enable must remain High, VIH, during the whole Bus
Write operation. See Figures 9 and 10, Write AC
Waveforms, and Tables 15 and 16, Write AC
Characteristics, for details of the timing requirements.
Output Disable. The Data Inputs/Outputs are in
the high impedance state when Output Enable is
High, VIH.
Standby. When Chip Enable is High, VIH, the
memory enters Standby mode and the Data Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to the
Standby Supply Current, ICC2, Chip Enable should
be held within VCC ± 0.2V. For the Standby current
level see Table 13, DC Characteristics.
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, ICC3, for Program or Erase operations until the operation completes.
Table 5. Bus Operations, BYTE = VIL
Operation
E
G
Address Inputs
DQ15A–1, A0-A16
W
Data Inputs/Outputs
DQ14-DQ8
DQ7-DQ0
Bus Read
VIL
VIL
VIH
Cell Address
Hi-Z
Data Output
Bus Write
VIL
VIH
VIL
Command Address
Hi-Z
Data Input
X
VIH
VIH
X
Hi-Z
Hi-Z
Standby
VIH
X
X
X
Hi-Z
Hi-Z
Read Manufacturer
Code
VIL
VIL
VIH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
20h
Read Device Code
VIL
VIL
VIH
A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
51h (M29W200BT)
57h (M29W200BB)
Address Inputs
A0-A16
Output Disable
Note: X = VIL or VIH.
Table 6. Bus Operations, BYTE = VIH
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
E
G
W
Bus Read
VIL
VIL
VIH
Cell Address
Bus Write
VIL
VIH
VIL
Command Address
X
VIH
VIH
X
Hi-Z
Standby
VIH
X
X
X
Hi-Z
Read Manufacturer
Code
VIL
VIL
VIH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
0020h
Read Device Code
VIL
VIL
VIH
A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
0051h (M29W200BT)
0057h (M29W200BB)
Operation
Output Disable
Data Output
Data Input
Note: X = VIL or VIH.
5/22
M29W200BT, M29W200BB
Automatic Standby. If CMOS levels (VCC ± 0.2V)
are used to drive the bus and the bus is inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is reduced to the Standby Supply Current, ICC2. The
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus operations are intended for use by programming equipment and are not usually used in applications.
They require VID to be applied to some pins.
Electronic Signature. The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Tables 5 and 6, Bus Operations.
Block Protection and Blocks Unprotection. Each
block can be separately protected against accidental Program or Erase. Protected blocks can be
unprotected to allow data to be changed.
There are two methods available for protecting
and unprotecting the blocks, one for use on programming equipment and the other for in-system
use. For further information refer to Application
Note AN1122, Applying Protection and Unprotection to M29 Series Flash.
COMMAND INTERFACE
All Bus Write operations to the memory are interpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus
Write operations will result in the memory returning to Read mode. The long command sequences
are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-bit or 8bit mode. See either Table 7, or 8, depending on
the configuration that is being used, for a summary
of the commands.
Read/Reset Command. The Read/Reset command returns the memory to its Read mode where
it behaves like a ROM or EPROM. It also resets
the errors in the Status Register. Either one or
three Bus Write operations can be used to issue
the Read/Reset command.
If the Read/Reset command is issued during a
Block Erase operation or following a Programming
or Erase error then the memory will take up to 10µs
to abort. During the abort period no valid data can
be read from the memory. Issuing a Read/Reset
command during a Block Erase operation will
leave invalid data in the memory.
6/22
Auto Select Command. The Auto Select command is used to read the Manufacturer Code, the
Device Code and the Block Protection Status.
Three consecutive Bus Write operations are required to issue the Auto Select command. Once
the Auto Select command is issued the memory
remains in Auto Select mode until another command is issued.
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = VIL and A1 = VIL. The other address bits
may be set to either VIL or VIH. The Manufacturer
Code for STMicroelectronics is 0020h.
The Device Code can be read using a Bus Read
operation with A0 = VIH and A1 = VIL. The other
address bits may be set to either VIL or VIH. The
Device Code for the M29W200BT is 0051h and for
the M29W200BB is 0057h.
The Block Protection Status of each block can be
read using a Bus Read operation with A0 = VIL,
A1 = VIH, and A12-A16 specifying the address of
the block. The other address bits may be set to either VIL or VIH. If the addressed block is protected
then 01h is output on Data Inputs/Outputs DQ0DQ7, otherwise 00h is output.
Program Command. The Program command
can be used to program a value to one address in
the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data in the internal
state machine and starts the Program/Erase Controller.
If the address falls in a protected block then the
Program command is ignored, the data remains
unchanged. The Status Register is never read and
no error condition is given.
During the program operation the memory will ignore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 9. Bus Read operations during the program operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’. One of the Erase Commands must be used to set all the bits in a block or
in the whole memory from ’0’ to ’1’.
M29W200BT, M29W200BB
Command
Length
Table 7. Commands, 16-bit mode, BYTE = VIH
Bus Write Operations
1st
2nd
Addr
Data
1
X
F0
3
555
Auto Select
3
Program
3rd
4th
Addr
Data
Addr
Data
AA
2AA
55
X
F0
555
AA
2AA
55
555
90
4
555
AA
2AA
55
555
A0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
555
AA
2AA
55
555
Block Erase
6+
555
AA
2AA
55
555
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Read/Reset
5th
Addr
Data
PA
PD
80
555
80
555
6th
Addr
Data
Addr
Data
AA
2AA
55
555
10
AA
2AA
55
BA
30
Command
Length
Table 8. Commands, 8-bit mode, BYTE = VIL
Bus Write Operations
1st
2nd
Addr
Data
1
X
F0
3
AAA
Auto Select
3
Program
3rd
4th
Addr
Data
Addr
Data
AA
555
55
X
F0
AAA
AA
555
55
AAA
90
4
AAA
AA
555
55
AAA
A0
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
AAA
AA
555
55
AAA
Block Erase
6+
AAA
AA
555
55
AAA
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Read/Reset
5th
Addr
Data
PA
PD
80
AAA
80
AAA
6th
Addr
Data
Addr
Data
AA
555
55
AAA
10
AA
555
55
BA
30
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A16, DQ8-DQ14 and DQ15 are Don’t Care.
DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/Erase
Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional Bus Write
Operations until Timeout Bit is set.
Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands
on non-erasing blocks as normal.
Erase Resume. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/
Erase Controller completes and the memory returns to Read Mode.
7/22
M29W200BT, M29W200BB
Unlock Bypass Command. The Unlock Bypass
command is used in conjunction with the Unlock
Bypass Program command to program the memory. When the access time to the device is long (as
with some EPROM programmers) considerable
time saving can be made by using these commands. Three Bus Write operations are required
to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock Bypass Program command and the Unlock Bypass
Reset command. The memory can be read as if in
Read mode.
Unlock Bypass Program Command. The Unlock Bypass Program command can be used to
program one address in memory at a time. The
command requires two Bus Write operations, the
final write operation latches the address and data
in the internal state machine and starts the Program/Erase Controller.
The Program operation using the Unlock Bypass
Program command behaves identically to the Program operation using the Program command. A
protected block cannot be programmed; the operation cannot be aborted and the Status Register is
read. Errors must be reset using the Read/Reset
command, which leaves the device in Unlock Bypass Mode. See the Program command for details
on the behavior.
Unlock Bypass Reset Command. The Unlock
Bypass Reset command can be used to return to
Read/Reset mode from Unlock Bypass Mode.
Two Bus Write operations are required to issue the
Unlock Bypass Reset command.
Chip Erase Command. The Chip Erase command can be used to erase the entire chip. Six Bus
Write operations are required to issue the Chip
Erase Command and start the Program/Erase
Controller.
If any blocks are protected then these are ignored
and all the other blocks are erased. If all of the
blocks are protected the Chip Erase operation appears to start but will terminate within about 100µs,
leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the erase operation the memory will ignore
all commands. It is not possible to issue any command to abort the operation. Typical chip erase
times are given in Table 9. All Bus Read operations during the Chip Erase operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
8/22
After the Chip Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read Mode.
The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All previous
data is lost.
Block Erase Command. The Block Erase command can be used to erase a list of one or more
blocks. Six Bus Write operations are required to
select the first block in the list. Each additional
block in the list can be selected by repeating the
sixth Bus Write operation using the address of the
additional block. The Block Erase operation starts
the Program/Erase Controller about 50µs after the
last Bus Write operation. Once the Program/Erase
Controller starts it is not possible to select any
more blocks. Each additional block must therefore
be selected within 50µs of the last block. The 50µs
timer restarts when an additional block is selected.
The Status Register can be read after the sixth
Bus Write operation. See the Status Register for
details on how to identify if the Program/Erase
Controller has started the Block Erase operation.
If any selected blocks are protected then these are
ignored and all the other selected blocks are
erased. If all of the selected blocks are protected
the Block Erase operation appears to start but will
terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored.
During the Block Erase operation the memory will
ignore all commands except the Erase Suspend
and Read/Reset commands. Typical block erase
times are given in Table 9. All Bus Read operations during the Block Erase operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the Block Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode.
The Block Erase Command sets all of the bits in
the unprotected selected blocks to ’1’. All previous
data in the selected blocks is lost.
M29W200BT, M29W200BB
Erase Suspend Command. The Erase Suspend
Command may be used to temporarily suspend a
Block Erase operation and return the memory to
Read mode. The command requires one Bus
Write operation.
The Program/Erase Controller will suspend within
15µs of the Erase Suspend Command being issued. Once the Program/Erase Controller has
stopped the memory will be set to Read mode and
the Erase will be suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start immediately when the Erase Resume Command is
issued. It will not be possible to select any further
blocks for erasure after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. Reading from blocks that
are being erased will output the Status Register. It
is also possible to enter the Auto Select mode: the
memory will behave as in the Auto Select mode on
all blocks until a Read/Reset command returns the
memory to Erase Suspend mode.
Erase Resume Command. The Erase Resume
command must be used to restart the Program/
Erase Controller from Erase Suspend. An erase
can be suspended and resumed more than once.
Table 9. Program, Erase Times and Program, Erase Endurance Cycles
(TA = 0 to 70°C or –40 to 85°C)
Typ (1)
Typical after
100k W/E Cycles (1)
1.3
1.3
3
3
18
sec
Block Erase (64 Kbytes)
0.8
0.8
6
sec
Program (Byte or Word)
10
10
200
µs
Chip Program (Byte by Byte)
2.8
2.8
15
sec
Chip Program (Word by Word)
1.4
1.4
8
sec
Parameter
Min
Chip Erase (All bits in the memory set to ‘0’)
Chip Erase
Program/Erase Cycles (per Block)
100,000
Max
Unit
sec
cycles
Note: 1. TA = 25°C, VCC = 3.3V.
9/22
M29W200BT, M29W200BB
STATUS REGISTER
Bus Read operations from any address always
read the Status Register during Program and
Erase operations. It is also read during Erase Suspend when an address within a block being erased
is accessed.
The bits in the Status Register are summarized in
Table 10, Status Register Bits.
Data Polling Bit (DQ7). The Data Polling Bit can
be used to identify whether the Program/Erase
Controller has successfully completed its operation or if it has responded to an Erase Suspend.
The Data Polling Bit is output on DQ7 when the
Status Register is read.
During Program operations the Data Polling Bit
outputs the complement of the bit being programmed to DQ7. After successful completion of
the Program operation the memory returns to
Read mode and Bus Read operations from the address just programmed output DQ7, not its complement.
During Erase operations the Data Polling Bit outputs ’0’, the complement of the erased state of
DQ7. After successful completion of the Erase operation the memory returns to Read Mode.
In Erase Suspend mode the Data Polling Bit will
output a ’1’ during a Bus Read operation within a
block being erased. The Data Polling Bit will
change from a ’0’ to a ’1’ when the Program/Erase
Controller has suspended the Erase operation.
Figure 4, Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A Valid Address is the address being programmed or an
address within the block being erased.
Toggle Bit (DQ6). The Toggle Bit can be used to
identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Toggle Bit is
output on DQ6 when the Status Register is read.
During Program and Erase operations the Toggle
Bit changes from ’0’ to ’1’ to ’0’, etc., with successive Bus Read operations at any address. After
successful completion of the operation the memory returns to Read mode.
During Erase Suspend mode the Toggle Bit will
output when addressing a cell within a block being
erased. The Toggle Bit will stop toggling when the
Program/Erase Controller has suspended the
Erase operation.
Figure 5, Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit.
Error Bit (DQ5). The Error Bit can be used to
identify errors detected by the Program/Erase
Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to
write the correct data to the memory. If the Error
Bit is set a Read/Reset command must be issued
before other commands are issued. The Error bit
is output on DQ5 when the Status Register is read.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’ and attempting to do so may
or may not set DQ5 at ’1’. In both cases, a successive Bus Read operation will show the bit is still ’0’.
One of the Erase commands must be used to set
all the bits in a block or in the whole memory from
’0’ to ’1’.
Table 10. Status Register Bits
Operation
Address
DQ7
DQ6
DQ5
DQ3
DQ2
RB
Program
Any Address
DQ7
Toggle
0
–
–
0
Program During Erase
Suspend
Any Address
DQ7
Toggle
0
–
–
0
Program Error
Any Address
DQ7
Toggle
1
–
–
0
Chip Erase
Any Address
0
Toggle
0
1
Toggle
0
Block Erase before
timeout
Erasing Block
0
Toggle
0
0
Toggle
0
Non-Erasing Block
0
Toggle
0
0
No Toggle
0
Erasing Block
0
Toggle
0
1
Toggle
0
Non-Erasing Block
0
Toggle
0
1
No Toggle
0
Erasing Block
1
No Toggle
0
–
Toggle
1
Block Erase
Erase Suspend
Non-Erasing Block
Data read as normal
1
Good Block Address
0
Toggle
1
1
No Toggle
0
Faulty Block Address
0
Toggle
1
1
Toggle
0
Erase Error
Note: Unspecified data bits should be ignored.
10/22
M29W200BT, M29W200BB
Figure 4. Data Polling Flowchart
Figure 5. Data Toggle Flowchart
START
START
READ
DQ5 & DQ6
READ DQ5 & DQ7
at VALID ADDRESS
READ DQ6
DQ7
=
DATA
YES
DQ6
=
TOGGLE
NO
NO
YES
NO
DQ5
=1
NO
YES
YES
READ DQ7
at VALID ADDRESS
DQ7
=
DATA
DQ5
=1
READ DQ6
TWICE
YES
DQ6
=
TOGGLE
NO
NO
YES
FAIL
PASS
FAIL
AI03598
Erase Timer Bit (DQ3). The Erase Timer Bit can
be used to identify the start of Program/Erase
Controller operation during a Block Erase command. Once the Program/Erase Controller starts
erasing the Erase Timer Bit is set to ’1’. Before the
Program/Erase Controller starts the Erase Timer
Bit is set to ’0’ and additional blocks to be erased
may be written to the Command Interface. The
Erase Timer Bit is output on DQ3 when the Status
Register is read.
Alternative Toggle Bit (DQ2). The Alternative
Toggle Bit can be used to monitor the Program/
Erase controller during Erase operations. The Alternative Toggle Bit is output on DQ2 when the
Status Register is read.
During Chip Erase and Block Erase operations the
Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations from addresses
PASS
AI01370B
within the blocks being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive
Bus Read operations from addresses within the
blocks being erased. Bus Read operations to addresses within blocks not being erased will output
the memory cell data as if in Read mode.
After an Erase operation that causes the Error Bit
to be set the Alternative Toggle Bit can be used to
identify which block or blocks have caused the error. The Alternative Toggle Bit changes from ’0’ to
’1’ to ’0’, etc. with successive Bus Read Operations from addresses within blocks that have not
erased correctly. The Alternative Toggle Bit does
not change if the addressed block has erased correctly.
11/22
M29W200BT, M29W200BB
Table 11. AC Measurement Conditions
M29W200B
Parameter
55
70
90 / 120
3.0 to 3.6V
2.7 to 3.6V
2.7 to 3.6V
Load Capacitance (CL)
30pF
30pF
100pF
Input Rise and Fall Times
≤10ns
≤10ns
≤10ns
Input Pulse Voltages
0 to 3V
0 to 3V
0 to 3V
1.5V
1.5V
1.5V
VCC Supply Voltage
Input and Output Timing Ref. Voltages
Figure 6. AC Testing Input Output Waveform
Figure 7. AC Testing Load Circuit
0.8V
1N914
3V
1.5V
0V
3.3kΩ
AI01417
DEVICE
UNDER
TEST
OUT
CL = 30pF or 100pF
CL includes JIG capacitance
AI02762
Table 12. Capacitance
(TA = 25 °C, f = 1 MHz)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Note: Sampled only, not 100% tested.
12/22
Test Condition
Min
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
M29W200BT, M29W200BB
Table 13. DC Characteristics
(TA = 0 to 70°C or –40 to 85°C)
Symbol
Parameter
Test Condition
Min
Max
Unit
0V ≤VIN ≤VCC
±1
µA
0V ≤VOUT ≤VCC
±1
µA
E = VIL, G = VIH, f = 6MHz
10
mA
ILI
Input Leakage Current
ILO
Output Leakage Current
ICC1
Supply Current (Read)
ICC2
Supply Current (Standby)
E = VCC ± 0.2V
100
µA
Supply Current (Program/Erase)
Program/Erase
Controller active
20
mA
ICC3 (1)
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7VCC
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 1.8mA
0.45
V
VOH
Output High Voltage
IOH = –100µA
VID
Identification Voltage
IID
Identification Current
VLKO (1)
Program/Erase Lockout Supply
Voltage
VCC – 0.4
11.5
A9 = VID
1.8
V
12.5
V
100
µA
2.3
V
Note: 1. Sampled only, not 100% tested.
13/22
M29W200BT, M29W200BB
Table 14. Read AC Characteristics
(TA = 0 to 70°C or –40 to 85°C)
M29W200B
Symbol
Alt
Parameter
Test Condition
Unit
55
70
90 / 120
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL,
G = VIL
Min
55
70
90
ns
tAVQV
tACC
Address Valid to Output Valid
E = VIL,
G = VIL
Max
55
70
90
ns
tELQX (1)
tLZ
Chip Enable Low to Output
Transition
G = VIL
Min
0
0
0
ns
tELQV
tCE
Chip Enable Low to Output Valid
G = VIL
Max
55
70
90
ns
tGLQX (1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
Min
0
0
0
ns
tGLQV
tOE
Output Enable Low to Output Valid
E = VIL
Max
30
30
35
ns
tEHQZ (1)
tHZ
Chip Enable High to Output Hi-Z
G = VIL
Max
20
25
30
ns
tGHQZ (1)
tDF
Output Enable High to Output Hi-Z
E = VIL
Max
20
25
30
ns
tEHQX
tGHQX
tAXQX
tOH
Chip Enable, Output Enable or
Address Transition to Output
Transition
Min
0
0
0
ns
tELBL
tELBH
tELFL
tELFH
Chip Enable to BYTE Low or High
Max
5
5
5
ns
tBLQZ
tFLQZ
BYTE Low to Output Hi-Z
Max
25
25
30
ns
tBHQV
tFHQV
BYTE High to Output Valid
Max
30
30
40
ns
Note: 1. Sampled only, not 100% tested.
Figure 8. Read Mode AC Waveforms
tAVAV
A0-A16/
A–1
VALID
tAVQV
tAXQX
E
tELQV
tEHQX
tELQX
tEHQZ
G
tGLQX
tGHQX
tGHQZ
tGLQV
DQ0-DQ7/
DQ8-DQ15
VALID
tBHQV
BYTE
tELBL/tELBH
14/22
tBLQZ
AI02915
M29W200BT, M29W200BB
Table 15. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70°C or –40 to 85°C)
M29W200B
Symbol
Alt
Parameter
Unit
55
70
90 / 120
tAVAV
tWC
Address Valid to Next Address Valid
Min
55
70
90
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
40
45
45
ns
tDVWH
tDS
Input Valid to Write Enable High
Min
25
30
45
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
30
30
30
ns
tAVWL
tAS
Address Valid to Write Enable Low
Min
0
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
Min
40
45
45
ns
Output Enable High to Write Enable Low
Min
0
0
0
ns
tGHWL
tWHGL
tOEH
Write Enable High to Output Enable Low
Min
0
0
0
ns
tWHRL (1)
tBUSY
Program/Erase Valid to RB Low
Max
30
30
35
ns
tVCHEL
tVCS
VCC High to Chip Enable Low
Min
50
50
50
µs
Note: 1. Sampled only, not 100% tested.
Figure 9. Write AC Waveforms, Write Enable Controlled
tAVAV
A0-A16/
A–1
VALID
tWLAX
tAVWL
tWHEH
E
tELWL
tWHGL
G
tGHWL
tWLWH
W
tWHWL
tDVWH
DQ0-DQ7/
DQ8-DQ15
tWHDX
VALID
VCC
tVCHEL
RB
tWHRL
AI01991
15/22
M29W200BT, M29W200BB
Table 16. Write AC Characteristics, Chip Enable Controlled
(TA = 0 to 70°C or –40 to 85°C)
M29W200B
Symbol
Alt
Parameter
Unit
55
70
90 / 120
tAVAV
tWC
Address Valid to Next Address Valid
Min
55
70
90
ns
tWLEL
tWS
Write Enable Low to Chip Enable Low
Min
0
0
0
ns
tELEH
tCP
Chip Enable Low to Chip Enable High
Min
40
45
45
ns
tDVEH
tDS
Input Valid to Chip Enable High
Min
25
30
45
ns
tEHDX
tDH
Chip Enable High to Input Transition
Min
0
0
0
ns
tEHWH
tWH
Chip Enable High to Write Enable High
Min
0
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
Min
30
30
30
ns
tAVEL
tAS
Address Valid to Chip Enable Low
Min
0
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
Min
40
45
45
ns
Output Enable High Chip Enable Low
Min
0
0
0
ns
tGHEL
tEHGL
tOEH
Chip Enable High to Output Enable Low
Min
0
0
0
ns
tEHRL (1)
tBUSY
Program/Erase Valid to RB Low
Max
30
30
35
ns
tVCHWL
tVCS
VCC High to Write Enable Low
Min
50
50
50
µs
Note: 1. Sampled only, not 100% tested.
Figure 10. Write AC Waveforms, Chip Enable Controlled
tAVAV
A0-A16/
A–1
VALID
tELAX
tAVEL
tEHWH
W
tWLEL
tEHGL
G
tGHEL
tELEH
E
tEHEL
tDVEH
DQ0-DQ7/
DQ8-DQ15
tEHDX
VALID
VCC
tVCHWL
RB
tEHRL
16/22
AI01992
M29W200BT, M29W200BB
Table 17. Reset/Block Temporary Unprotect AC Characteristics
(TA = 0 to 70°C or –40 to 85°C)
M29W200B
Symbol
Alt
tPHWL (1)
tPHEL
Parameter
Unit
55
70
90 / 120
tRH
RP High to Write Enable Low, Chip Enable
Low, Output Enable Low
Min
50
50
50
ns
tRB
RB High to Write Enable Low, Chip Enable
Low, Output Enable Low
Min
0
0
0
ns
tPLPX
tRP
RP Pulse Width
Min
500
500
500
ns
tPLYH (1)
tREADY
RP Low to Read Mode
Max
10
10
10
µs
tPHPHH (1)
tVIDR
RP Rise Time to VID
Min
500
500
500
ns
tPHGL
(1)
tRHWL (1)
tRHEL (1)
tRHGL
(1)
Note: 1. Sampled only, not 100% tested.
Figure 11. Reset/Block Temporary Unprotect AC Waveforms
W, E, G
tPHWL, tPHEL, tPHGL
RB
tRHWL, tRHEL, tRHGL
RP
tPLPX
tPHPHH
tPLYH
AI02931
17/22
M29W200BT, M29W200BB
Table 18. Ordering Information Scheme
Example:
M29W200BB
55
N
1
T
Device Type
M29
Operating Voltage
W = VCC = 2.7 to 3.6V
Device Function
200B = 2 Mbit (256Kb x8 or 128Kb x16), Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
55 = 55 ns
70 = 70 ns
90 = 90 ns
120 = 120 ns
Package
N = TSOP48: 12 x 20 mm
M = SO44, 525mm width
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = ECOPACK Package, Standard Packing
F = ECOPACK Package, Tape & Reel Packing
Note: The last two characters of the ordering code may be replaced by a letter code for preprogrammed
parts, otherwise devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you.
18/22
M29W200BT, M29W200BB
Table 19. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
Max
A
Typ
Min
1.200
Max
0.0472
A1
0.100
0.050
0.150
0.0039
0.0020
0.0059
A2
1.000
0.950
1.050
0.0394
0.0374
0.0413
B
0.220
0.170
0.270
0.0087
0.0067
0.0106
0.100
0.210
0.0039
0.0083
C
CP
0.100
0.0039
D1
12.000
11.900
12.100
0.4724
0.4685
0.4764
E
20.000
19.800
20.200
0.7874
0.7795
0.7953
E1
18.400
18.300
18.500
0.7244
0.7205
0.7283
e
0.500
–
–
0.0197
–
–
L
0.600
0.500
0.700
0.0236
0.0197
0.0276
L1
0.800
a
3
0
5
0.0315
0
5
3
Figure 12. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline
A2
N
1
e
E
B
N/2
A
D1
CP
D
DIE
C
TSOP-a
A1
α
L
Drawing is not to scale.
19/22
M29W200BT, M29W200BB
Table 20. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data
millimeters
inches
Symbol
Typ
Min
Max
A
Typ
Min
Max
2.80
A1
0.1102
0.10
0.0039
A2
2.30
2.20
2.40
0.0906
0.0866
0.0945
b
0.40
0.35
0.50
0.0157
0.0138
0.0197
C
0.15
0.10
0.20
0.0059
0.0039
0.0079
CP
0.08
0.0030
D
28.20
28.00
28.40
1.1102
1.1024
1.1181
E
13.30
13.20
13.50
0.5236
0.5197
0.5315
EH
16.00
15.75
16.25
0.6299
0.6201
0.6398
e
1.27
–
–
0.0500
–
–
L
0.80
0.0315
a
8
N
8
44
44
Figure 13. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Outline
A2
A
C
B
CP
e
D
N
E
H
1
A1
SO-b
Drawing is not to scale.
20/22
α
L
M29W200BT, M29W200BB
Table 21. Revision History
Date
Revision
Number
Revision Details
July 1999
First Issue
03/30/00
Status Register bit DQ5 clarification
Data Polling Flowchart diagram change (Figure 4)
Data Toggle Flowchart diagram change (Figure 5)
Program/Erase Times Maximum specification added (Table 9)
07/28/00
Document Type: from Preliminary Data to Data Sheet
19-Sep-2005
4.0
Table 18: Ordering Information Scheme: standard package added and
ECOPACK version added for both standard package and Tape & Reel packing.
TSOP48 and SO44 Mechanical Data updated.
21/22
M29W200BT, M29W200BB
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
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22/22