Freescale Semiconductor Technical Data Document Number: MRF18030A Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805 - 1880 MHz. • Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts • Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF18030ALR3 MRF18030ALSR3 1800- 1880 MHz, 30 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF18030ALR3 CASE 465F - 04, STYLE 1 NI - 400S MRF18030ALSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 83.3 0.48 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 2.1 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Class 2 (Minimum) M3 (Minimum) MRF18030ALR3 MRF18030ALSR3 1 Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 2 3.9 4.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs — 2 — S Crss — 1.3 — pF Output Power, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) P1dB 27 30 — W Common- Source Amplifier Power Gain @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) Gps 13 14 — dB Drain Efficiency @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) η 46.5 50 — % Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) IRL — - 12 -9 dB Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 μAdc) On Characteristics Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture) (2) 1. Part internally matched both on input and output. 2. Device specifications obtained on a Production Test Fixture. MRF18030ALR3 MRF18030ALSR3 2 RF Device Data Freescale Semiconductor VGG C8 R2 C7 C10 R1 C4 Z4 Z1 Z2 Z3 Z5 Z6 C5 C2 C1 C1 C2 C3 C4, C5 C6, C7, C8 C9 C10 R1 R2, R3 VDD Z9 R3 RF INPUT + Z7 Z8 RF OUTPUT C6 C3 DUT C9 1.8 pF, 100B Chip Capacitor 0.8 pF, 100B Chip Capacitor 1.0 pF, 100B Chip Capacitor 1.2 pF, 100B Chip Capacitors 8.2 pF, 100B Chip Capacitors 0.3 pF, 100B Chip Capacitor 220 mF, 63 V Electrolytic Capacitor 1.0 kΩ, 1/8 W Chip Resistor (0805) 10 kΩ, 1/8 W Chip Resistors (0805) Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.874″ x 0.087″ Microstrip 1.094″ x 0.087″ Microstrip 0.257″ x 0.633″ Microstrip 0.189″ x 0.394″ Microstrip 0.335″ x 0.394″ Microstrip 0.484″ x 0.087″ Microstrip 0.877″ x 0.087″ Microstrip 0.366″ x 0.087″ Microstrip ≈0.600″ x 0.087″ Microstrip Figure 1. 1805 - 1880 MHz Test Fixture Schematic VBIAS VSUPPLY R2R3 C7 C1 R1 C4 C2 C9 Ground (bias) C10 C8 C6 C5 C3 MRF18030A Ground (supply) Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1805 - 1880 MHz Test Fixture Component Layout MRF18030ALR3 MRF18030ALSR3 RF Device Data Freescale Semiconductor 3 TYPICAL CHARACTERISTICS −5 Gps @ 15 W 14 −10 Gps @ 30 W 13 −15 IRL @ 30 W 12 −20 VDD = 26 Vdc IDQ = 250 mA T = 25_C 11 10 IRL @ 15 W 1750 −25 1800 1850 30 20 10 5 0 1780 1800 1820 1840 1860 1880 1900 1920 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. Output Power versus Frequency 16 IDQ = 400 mA 15 G ps , POWER GAIN (dB) 300 mA 14 200 mA 13 12 100 mA VDD = 26 Vdc f = 1840 MHz T = 25_C 11 1 0.1 10 85_C 12 11 VDD = 26 Vdc IDQ = 250 mA f = 1840 MHz 24 26 28 30 32 34 36 38 40 42 44 46 48 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (dBm) Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 16 14 15 30 V 13 28 V 12 26 V 24 V 11 VDD = 22 Vdc IDQ = 250 mA f = 1840 MHz T = 25_C 0.1 55_C 13 9 100 15 10 T = 25_C 14 10 1 10 100 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 0.25 W Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power 15 9 VDD = 26 Vdc IDQ = 250 mA T = 25_C 0.5 W 15 16 10 1W 25 −30 1950 1900 Pin = 2 W 35 60 50 Gps 14 40 13 30 VDD = 26 Vdc IDQ = 250 mA f = 1840 MHz 12 20 η 11 10 0.1 1 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 15 40 P out, OUTPUT POWER (WATTS) 0 IRL, INPUT RETURN LOSS (dB) 16 10 10 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Efficiency versus Output Power 100 0 MRF18030ALR3 MRF18030ALSR3 4 RF Device Data Freescale Semiconductor f = 2110 MHz f = 2110 MHz Zload f = 1710 MHz Zo = 25 Ω Zsource f = 1710 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 W (CW) f MHz Zsource Ω Zload Ω 1710 2.92 - j8.24 4.18 - j9.06 1785 3.84 - j9.75 4.59 - j9.46 1805 4.15 - j10.38 4.98 - j9.06 1840 4.04 - j10.22 6.10 - j7.63 1880 6.12 - j12.29 5.83 - j6.89 1960 6.20 - j12.29 5.55 - j6.33 1990 8.61 - j12.10 5.93 - j6.66 2110 15.19 - j11.85 3.82 - j5.33 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF18030ALR3 MRF18030ALSR3 RF Device Data Freescale Semiconductor 5 NOTES MRF18030ALR3 MRF18030ALSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G Q bbb T B M M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. B SEE NOTE 4 1 3 2X K B 2 2X D bbb M T A M B M N (LID) ccc M T A B M ccc M aaa M T A M B M A M F T M (INSULATOR) B M R (LID) C E T A M S (INSULATOR) SEATING PLANE aaa M T A M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 465E - 04 ISSUE F NI - 400 MRF18030ALR3 2X D bbb M T A M B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 1 2 2X K ccc M T A M N E B R M (LID) (LID) ccc C M T A M B M M B M F 3 A T A (FLANGE) M aaa M T A M SEATING PLANE (INSULATOR) B M H S (INSULATOR) aaa B (FLANGE) M T A B DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF18030ALSR3 MRF18030ALR3 MRF18030ALSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF18030ALR3 MRF18030ALSR3 Document Number: MRF18030A 8Rev. 8, 5/2006 RF Device Data Freescale Semiconductor