Freescale MRF18030A Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF18030A
Rev. 8, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
amplifier applications. Specified for GSM 1805 - 1880 MHz.
• Typical GSM Performance:
Power Gain - 14 dB (Typ) @ 30 Watts
Efficiency - 50% (Typ) @ 30 Watts
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF18030ALR3
MRF18030ALSR3
1800- 1880 MHz, 30 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF18030ALR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF18030ALSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
2.1
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
2 (Minimum)
M3 (Minimum)
MRF18030ALR3 MRF18030ALSR3
1
Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
2
3.9
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
Crss
—
1.3
—
pF
Output Power, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
P1dB
27
30
—
W
Common- Source Amplifier Power Gain @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
Gps
13
14
—
dB
Drain Efficiency @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
η
46.5
50
—
%
Input Return Loss @ 30 W
(VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz)
IRL
—
- 12
-9
dB
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 μAdc)
On Characteristics
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture) (2)
1. Part internally matched both on input and output.
2. Device specifications obtained on a Production Test Fixture.
MRF18030ALR3 MRF18030ALSR3
2
RF Device Data
Freescale Semiconductor
VGG
C8
R2
C7
C10
R1
C4
Z4
Z1
Z2
Z3
Z5
Z6
C5
C2
C1
C1
C2
C3
C4, C5
C6, C7, C8
C9
C10
R1
R2, R3
VDD
Z9
R3
RF
INPUT
+
Z7
Z8
RF
OUTPUT
C6
C3
DUT
C9
1.8 pF, 100B Chip Capacitor
0.8 pF, 100B Chip Capacitor
1.0 pF, 100B Chip Capacitor
1.2 pF, 100B Chip Capacitors
8.2 pF, 100B Chip Capacitors
0.3 pF, 100B Chip Capacitor
220 mF, 63 V Electrolytic Capacitor
1.0 kΩ, 1/8 W Chip Resistor (0805)
10 kΩ, 1/8 W Chip Resistors (0805)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.874″ x 0.087″ Microstrip
1.094″ x 0.087″ Microstrip
0.257″ x 0.633″ Microstrip
0.189″ x 0.394″ Microstrip
0.335″ x 0.394″ Microstrip
0.484″ x 0.087″ Microstrip
0.877″ x 0.087″ Microstrip
0.366″ x 0.087″ Microstrip
≈0.600″ x 0.087″ Microstrip
Figure 1. 1805 - 1880 MHz Test Fixture Schematic
VBIAS
VSUPPLY
R2R3
C7
C1
R1
C4
C2
C9
Ground
(bias)
C10
C8
C6
C5
C3
MRF18030A
Ground
(supply)
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1805 - 1880 MHz Test Fixture Component Layout
MRF18030ALR3 MRF18030ALSR3
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS
−5
Gps @ 15 W
14
−10
Gps @ 30 W
13
−15
IRL @ 30 W
12
−20
VDD = 26 Vdc
IDQ = 250 mA
T = 25_C
11
10
IRL @ 15 W
1750
−25
1800
1850
30
20
10
5
0
1780
1800
1820
1840
1860
1880
1900
1920
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 4. Output Power versus Frequency
16
IDQ = 400 mA
15
G ps , POWER GAIN (dB)
300 mA
14
200 mA
13
12
100 mA
VDD = 26 Vdc
f = 1840 MHz
T = 25_C
11
1
0.1
10
85_C
12
11
VDD = 26 Vdc
IDQ = 250 mA
f = 1840 MHz
24
26
28
30
32
34
36
38
40
42
44
46
48
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (dBm)
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
16
14
15
30 V
13
28 V
12
26 V
24 V
11
VDD = 22 Vdc
IDQ = 250 mA
f = 1840 MHz
T = 25_C
0.1
55_C
13
9
100
15
10
T = 25_C
14
10
1
10
100
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
0.25 W
Figure 3. Wideband Gain and IRL at 30 W and
15 W Output Power
15
9
VDD = 26 Vdc
IDQ = 250 mA
T = 25_C
0.5 W
15
16
10
1W
25
−30
1950
1900
Pin = 2 W
35
60
50
Gps
14
40
13
30
VDD = 26 Vdc
IDQ = 250 mA
f = 1840 MHz
12
20
η
11
10
0.1
1
η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
15
40
P out, OUTPUT POWER (WATTS)
0
IRL, INPUT RETURN LOSS (dB)
16
10
10
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Efficiency versus
Output Power
100
0
MRF18030ALR3 MRF18030ALSR3
4
RF Device Data
Freescale Semiconductor
f = 2110 MHz
f = 2110 MHz
Zload
f = 1710 MHz
Zo = 25 Ω
Zsource
f = 1710 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 W (CW)
f
MHz
Zsource
Ω
Zload
Ω
1710
2.92 - j8.24
4.18 - j9.06
1785
3.84 - j9.75
4.59 - j9.46
1805
4.15 - j10.38
4.98 - j9.06
1840
4.04 - j10.22
6.10 - j7.63
1880
6.12 - j12.29
5.83 - j6.89
1960
6.20 - j12.29
5.55 - j6.33
1990
8.61 - j12.10
5.93 - j6.66
2110
15.19 - j11.85
3.82 - j5.33
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF18030ALR3 MRF18030ALSR3
RF Device Data
Freescale Semiconductor
5
NOTES
MRF18030ALR3 MRF18030ALSR3
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
G
Q
bbb
T B
M
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
3
2X K
B
2
2X D
bbb
M
T A
M
B
M
N (LID)
ccc
M
T A
B
M
ccc
M
aaa
M
T A
M
B
M
A
M
F
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
S
(INSULATOR)
SEATING
PLANE
aaa
M
T A
M
H
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
CASE 465E - 04
ISSUE F
NI - 400
MRF18030ALR3
2X D
bbb M T A
M
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
2
2X K
ccc
M
T A
M
N
E
B
R
M
(LID)
(LID)
ccc
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
T A
B
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE E
NI - 400S
MRF18030ALSR3
MRF18030ALR3 MRF18030ALSR3
RF Device Data
Freescale Semiconductor
7
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF18030ALR3 MRF18030ALSR3
Document Number: MRF18030A
8Rev. 8, 5/2006
RF Device Data
Freescale Semiconductor
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