Fairchild FJZ594JC Si n-channel junction fet Datasheet

FJZ594J
FJZ594J
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
3
2
1
SOT-623F
1. Drain 2. Source 3. Gate
Si N-channel Junction FET
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VGDO
Gate-Drain Voltage
Parameter
Ratings
-20
Units
V
IG
ID
Gate Current
10
mA
Drain Current
1
PD
Power Dissipation
mA
100
mW
TJ
TSTG
Junction Temperature
150
°C
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVGDO
Parameter
Gate-Drain Breakdown Voltage
Test Condition
IG= -100uA
Min.
-20
Typ.
Max.
Units
V
-0.6
-1.5
V
350
µA
VGS(off)
Gate-Source Cut-off Voltage
VDS=5V, ID=1µA
IDSS
Drain Current
VDS=5V, VGS=0
150
lyfsl
Forward Transfer Admittance
VDS=5V, VGS=0, f=1MHz
0.4
CISS
Input Capacitance
VDS=5V, VGS=0, f=1MHz
3.5
pF
CRSS
Output Capacitance
VDS=5V, VGS=0, f=1MHz
0.65
pF
1.2
mS
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
RθjA
Parameter
Thermal Resistance, Junction to Ambient
Max
1250
Units
°C/W
IDSS Classification
Classification
IDSS (µA)
B
150 ~ 240
C
210 ~ 350
Marking
J1B
Idss grade
©2003 Fairchild Semiconductor Corporation
Rev. D, July 2003
FJZ594J
Typical Characteristics
300
400.0µ
350.0µ
ID [µA], DRAIN CURRENT
ID [A], DRAIN CURRENT
300.0µ
250.0µ
200.0µ
VGS = 0 V
150.0µ
VGS = - 0.1V
100.0µ
200
150
100
50
VGS = - 0.2V
50.0µ
0.0
VDS = 5V
IDSS = 200µA
250
VGS = - 0.3V
0
1
2
3
4
0
-1.0
5
-0.8
VDS [V], DRAIN-SOURCE VOLTAGE
1
0.1
0.1
VDS = 5V
ID = 1µA
-1
- 0.1
0.1
1
VGS = 0
f = 1MHz
10
10
VDS [V], DRAIN-SOURCE VOLTAGE
©2003 Fairchild Semiconductor Corporation
Figure 4. Cut-Off Voltage
Crss [pF], REVERSE TRANSFER CAPACITANCE
Ciss [pF], INPUT CAPACITANCE
100
Figure 5. Input Capacitance
1
IDSS [mA], DRAIN CURRENT
Figure 3. Forward Transfer Admittance
1
0.0
-10
IDSS [mA], DRAIN CURRENT
1
-0.2
Figure 2. Transfer Characteristic
VGS(off)[V], GATE-SOURCE CUT-OFF VOLTAGE
|yfs| [mS], FORWARD TRANSFER ADMITTANCE
VDS = 5V
VGS = 0
f=1kHz
-0.4
VGS [V], GATE-SOURCE VOLTAGE
Figure 1. Static Characteristics
10
-0.6
10
VGS = 0
f = 1MHz
1
0.1
1
10
VDS [V], DRAIN-SOURCE VOLTAGE
Figure 6. Reverse Transfer Capacitance
Rev. D, July 2003
FJZ594J
Typical Characteristics (Continued)
140
PD [mW], POWER DISSIPATION
120
100
80
60
40
20
0
0
25
50
75
100
125
150
o
Ta [ C], AMBIENT TEMPERATURE
Figure 7. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. D, July 2003
FJZ594J
Package Dimensions
SOT-623F
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. D, July 2003
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I3
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