BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 183W SOT-343 RHs Q62702-F1503 1=E 2=C 3=E 4=B Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 Base current IB 5 Total power dissipation Ptot TS ≤ 58 °C Values Unit V mA mW 450 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 205 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFP 183W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 15 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-12-1996 BFP 183W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 6 pF - 0.4 0.6 - 0.27 - - 1 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 8 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.2 - f = 1.8 GHz - 2 - - 21.5 - - 14.5 - f = 900 MHz - 17 - f = 1.8 GHz - 11 - Power gain 1) Gms IC = 15 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma IC = 15 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain |S21e|2 IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω 1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996 BFP 183W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.0345 fA BF = 115.98 - NF = 0.80799 - VAF = 14.772 V IKF = 0.14562 A ISE = 16.818 fA NE = 1.2149 - BR = 10.016 - NR = 0.99543 - VAR = 3.4276 V IKR = 0.013483 A ISC = 1.3559 fA NC = 0.85331 - RB = 1.0112 Ω IRB = 0.43801 mA RBM = 2.5426 Ω RE = 1.3435 Ω RC = 0.20486 Ω CJE = 23.077 fF VJE = 1.0792 V MJE = 0.45354 - TF = 22.746 ps XTF = 0.36823 - VTF = 0.50905 V ITF = 1.8773 mA PTF = 0 deg CJC = 460.11 fF VJC = 1.1967 V MJC = 0.3 - XCJC = 0.053823 - TR = 1.0553 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.54852 - TNOM 300 K LBI = 0.43 nH LBO = 0.47 nH LEI = 0.26 nH LEO = 0.12 nH LCI = 0.06 nH LCO = 0.36 nH CBE = 68 fF CCB = 46 fF CCE = 232 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-12-1996 BFP 183W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 500 mW Ptot 400 TS 350 300 250 200 TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 Ptotmax/PtotDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-12-1996 BFP 183W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 10.0 0.65 pF MHz 0.55 Ccb fT 0.50 10V 8V 8.0 0.45 7.0 0.40 6.0 5V 3V 0.35 5.0 2V 0.30 0.25 4.0 0.20 3.0 0.15 1V 0.7V 2.0 0.10 1.0 0.05 0.00 0 0.0 4 8 12 16 V 24 0 5 10 15 20 25 30 35 V CB Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 24 18 dB dB G G 10V 5V 20 mA IC 45 10V 14 3V 3V 12 18 2V 2V 10 16 8 14 1V 6 1V 12 4 10 0.7V 2 0.7V 8 0 0 5 10 Semiconductor Group 15 20 25 30 35 mA IC 45 0 6 5 10 15 20 25 30 35 mA IC 45 Dec-12-1996 BFP 183W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 28 24 8V IC=15mA dB dBm 0.9GHz 20 G IP3 24 5V 18 0.9GHz 22 1.8GHz 20 16 14 3V 12 18 1.8GHz 10 16 8 2V 14 6 12 4 10 2 0 1V 8 0 2 4 6 8 V 12 0 4 8 12 16 20 24 28 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 35 32 mA 38 IC 35 IC=15mA IC=15mA dB dB G S21 25 25 20 20 15 15 10V 2V 1V 0.7V 10 10 5 5 0 0.0 0 0.0 10V 2V 1V 0.7V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 3.5 7 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-12-1996