IRF HFA105NH60R Hexfredâ ¢ ultrafast, soft recovery diode Datasheet

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PD-2.443
HFA105NH60R
TM
HEXFRED
Ultrafast, Soft Recovery Diode
LUG
TERMINAL
CATHODE
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
VR = 600V
VF = 1.5V
a
d
Qrr * = 1200nC
di(rec)M/dt * = 240A/µs
* 125°C
BASE ANODE
Description
TM
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
HALF-PAK
Absolute Maximum Ratings
Parameter
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
IAS
EAS
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Single Pulse Avalanche Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
Units
600
147
72
600
2.0
220
379
152
V
A
µJ
W
-55 to +150
°C
Thermal - Mechanical Characteristics
Parameter
RθJC
RθCS
Wt
Note:
Junction-to-Case, Single
Case-to-Sink, Flat , Greased Surface
Weight
Mounting Torque
Terminal Torque
Min.
Typ.
Max.
Units
––––
––––
––––
15 (1.7)
20 (2.2)
––––
0.15
26 (0.9)
––––
––––
0.33
––––
––––
25 (2.8)
40 (4.4)
°C/W
K/W
g (oz)
lbf•in
(N•m)
Limited by junction temperature
L = 100µH, duty cycle limited by max TJ
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HFA105NH60R
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
VFM
Min. Typ. Max. Units
Cathode Anode Breakdown Voltage
Max Forward Voltage
600
IRM
Max Reverse Leakage Current
CT
Junction Capacitance
–––
–––
1.3
1.5
1.2
6.0
1.5
200
LS
Series Inductance
–––
6.0
–––
–––
1.5
1.7
1.4
30
6.0
300
V
µA
mA
pF
–––
nH
V
Test Conditions
IR = 100µA
IF = 105A
IF = 210A
IF = 105A, TJ = 125°C
VR = VR Rated
TJ = 125°C, VR = 480V
VR = 200V
From top of terminal hole to mounting
plane
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Min. Typ. Max. Units
Reverse Recovery Time
––– 35 –––
––– 90 140
ns
––– 160 240
––– 10
18
A
––– 15
30
––– 450 1300
nC
––– 1200 3600
––– 310 –––
A/µs
––– 240 –––
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During tb
Test Conditions
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
IF = 105A
TJ = 25°C
TJ = 125°C
VR = 200V
TJ = 25°C
TJ = 125°C
dif/dt = 200A/µs
TJ = 25°C
TJ = 125°C
30.40 (1.197)
29.90 (1.177)
1/4-20 UNC-2B
19.69 (0.775)
18.42 (0.725)
4.11 (0.162)
3.86 (0.152)
12.83 (0.505)
DIA.
12.57 (0.495)
4.11 (0.162)
DIA.
3.86 (0.152)
LEAD ASSIGNMENTS
1 - CATHODE
2 - ANODE
19.18 (0.755)
SQ.
18.92 (0.745)
1
15.75 (0.620)
14.99 (0.590)
14.10 (0.555)
13.59 (0.535)
2
HALF-PAK
Dimensions in millimeters and inches
39.62 (1.560)
38.61 (1.520)
3.30 (0.130)
3.05 (0.120)
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HFA105NH60R
10000
Reverse Current - I R (µA)
TJ = 150°C
100
TJ = 150°C
TJ = 125°C
1000
TJ = 125°C
100
10
1
TJ = 25°C
0.1
0
TJ = 25°C
200
400
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
10
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
1000
10000
A
TJ = 25°C
1000
1
0.0
1.0
2.0
3.0
4.0
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
100
1
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Impedance - Z thJC (K/W)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
PD M
t
D = 0.08
1
t2
0.01
0.001
0.00001
N otes:
1. D uty factor D = t / t
1 2
Single Pulse
(Thermal Resistance)
2. P eak TJ = P D M x Z thJC + T C
0.0001
0.001
0.01
0.1
1
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
To Order
10
100
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HFA105NH60R
100
240
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
200
IF = 200A
I IRRM - (A)
t rr - (ns)
IF = 105A
160
IF = 200A
120
I F = 105A
I F = 40A
10
I F = 40A
80
40
100
1
100
1000
di f /dt - (A/µs)
Fig. 5 - Typical Reverse Recovery vs. dif/dt
di f /dt - (A/µs)
1000
Fig. 6 - Typical Recovery Current vs. dif/dt
10000
4000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
Q RR - (nC)
3000
IF = 200A
2000
IF = 105A
IF = 40A
I F = 200A
1000
IF = 105A
I F = 40A
1000
0
100
1000
di f /dt - (A/µs)
Fig. 7 - Typical Stored Charge vs. dif/dt
To Order
100
100
1000
di f /dt - (A/µs)
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
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HFA105NH60R
3
t rr
IF
tb
ta
0
REVERSE RECOVERY CIRCUIT
Q rr
VR = 200V
2
I RRM
4
0.5 I RRM
di(rec)M/dt
0.01 Ω
L = 70µH
1
D.U.T.
dif/dt
ADJUST
4. Qrr - Area under curve defined by rtr
and IRRM
trr X IRRM
Qrr =
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
I L(PK)
L = 100µH
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm
CURRENT
MONITOR
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
D
G
5
0.75 I RRM
FREE-WHEEL
DIODE
+
DECAY
TIME
Vd = 50V
V (AVAL)
V R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
To Order
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