Previous Datasheet Index Next Data Sheet PD-2.443 HFA105NH60R TM HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VR = 600V VF = 1.5V a d Qrr * = 1200nC di(rec)M/dt * = 240A/µs * 125°C BASE ANODE Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. HALF-PAK Absolute Maximum Ratings Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM IAS EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Maximum Single Pulse Avalanche Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 600 147 72 600 2.0 220 379 152 V A µJ W -55 to +150 °C Thermal - Mechanical Characteristics Parameter RθJC RθCS Wt Note: Junction-to-Case, Single Case-to-Sink, Flat , Greased Surface Weight Mounting Torque Terminal Torque Min. Typ. Max. Units –––– –––– –––– 15 (1.7) 20 (2.2) –––– 0.15 26 (0.9) –––– –––– 0.33 –––– –––– 25 (2.8) 40 (4.4) °C/W K/W g (oz) lbf•in (N•m) Limited by junction temperature L = 100µH, duty cycle limited by max TJ To Order Revision 0 Previous Datasheet Index Next Data Sheet HFA105NH60R Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR VFM Min. Typ. Max. Units Cathode Anode Breakdown Voltage Max Forward Voltage 600 IRM Max Reverse Leakage Current CT Junction Capacitance ––– ––– 1.3 1.5 1.2 6.0 1.5 200 LS Series Inductance ––– 6.0 ––– ––– 1.5 1.7 1.4 30 6.0 300 V µA mA pF ––– nH V Test Conditions IR = 100µA IF = 105A IF = 210A IF = 105A, TJ = 125°C VR = VR Rated TJ = 125°C, VR = 480V VR = 200V From top of terminal hole to mounting plane Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Min. Typ. Max. Units Reverse Recovery Time ––– 35 ––– ––– 90 140 ns ––– 160 240 ––– 10 18 A ––– 15 30 ––– 450 1300 nC ––– 1200 3600 ––– 310 ––– A/µs ––– 240 ––– Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb Test Conditions IF = 1.0A, dif/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C IF = 105A TJ = 25°C TJ = 125°C VR = 200V TJ = 25°C TJ = 125°C dif/dt = 200A/µs TJ = 25°C TJ = 125°C 30.40 (1.197) 29.90 (1.177) 1/4-20 UNC-2B 19.69 (0.775) 18.42 (0.725) 4.11 (0.162) 3.86 (0.152) 12.83 (0.505) DIA. 12.57 (0.495) 4.11 (0.162) DIA. 3.86 (0.152) LEAD ASSIGNMENTS 1 - CATHODE 2 - ANODE 19.18 (0.755) SQ. 18.92 (0.745) 1 15.75 (0.620) 14.99 (0.590) 14.10 (0.555) 13.59 (0.535) 2 HALF-PAK Dimensions in millimeters and inches 39.62 (1.560) 38.61 (1.520) 3.30 (0.130) 3.05 (0.120) To Order Previous Datasheet Index Next Data Sheet HFA105NH60R 10000 Reverse Current - I R (µA) TJ = 150°C 100 TJ = 150°C TJ = 125°C 1000 TJ = 125°C 100 10 1 TJ = 25°C 0.1 0 TJ = 25°C 200 400 600 Reverse Voltage - VR (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage 10 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 1000 10000 A TJ = 25°C 1000 1 0.0 1.0 2.0 3.0 4.0 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance - Z thJC (K/W) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 PD M t D = 0.08 1 t2 0.01 0.001 0.00001 N otes: 1. D uty factor D = t / t 1 2 Single Pulse (Thermal Resistance) 2. P eak TJ = P D M x Z thJC + T C 0.0001 0.001 0.01 0.1 1 t 1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics To Order 10 100 Previous Datasheet Index Next Data Sheet HFA105NH60R 100 240 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 200 IF = 200A I IRRM - (A) t rr - (ns) IF = 105A 160 IF = 200A 120 I F = 105A I F = 40A 10 I F = 40A 80 40 100 1 100 1000 di f /dt - (A/µs) Fig. 5 - Typical Reverse Recovery vs. dif/dt di f /dt - (A/µs) 1000 Fig. 6 - Typical Recovery Current vs. dif/dt 10000 4000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) Q RR - (nC) 3000 IF = 200A 2000 IF = 105A IF = 40A I F = 200A 1000 IF = 105A I F = 40A 1000 0 100 1000 di f /dt - (A/µs) Fig. 7 - Typical Stored Charge vs. dif/dt To Order 100 100 1000 di f /dt - (A/µs) Fig. 8 - Typical di(rec)M/dt vs. dif/dt Previous Datasheet Index Next Data Sheet HFA105NH60R 3 t rr IF tb ta 0 REVERSE RECOVERY CIRCUIT Q rr VR = 200V 2 I RRM 4 0.5 I RRM di(rec)M/dt 0.01 Ω L = 70µH 1 D.U.T. dif/dt ADJUST 4. Qrr - Area under curve defined by rtr and IRRM trr X IRRM Qrr = 2. IRRM - Peak reverse recovery current 2 3. trr - Reverse recovery time measured from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions I L(PK) L = 100µH HIGH-SPEED SWITCH DUT Rg = 25 ohm CURRENT MONITOR di f /dt 1. dif/dt - Rate of change of current through zero crossing D G 5 0.75 I RRM FREE-WHEEL DIODE + DECAY TIME Vd = 50V V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms To Order