WILLAS BC857C Pnp silicon general purpose transistor Datasheet

ϴϱϳdžddϭ
WEW^ŝůŝĐŽŶ'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌƐ
PRIMARY CHARACTERISTICS
SC-89
PD
200mW
VCEO
-45V
IC
-100mAdc
hFE
125~800
TJ,Max
150℃
Marking Code :
Ex : BC857BTT1
3F
3F
= Device Code
ORDERING INFORMATION
3
COLLECT OR
Device
Marking
BC857ATT1
3E
BC857BTT1
3F
BC857CTT1
3G
1
B ASE
2
EMIT T ER
MECHANICAL DATA
FEATURES

PACKAGE
These transistors are designed for

Case:Molded plastic,SC-89
general purpose amplifier

Polarity:As Above Marked
applications. They are housed in the

Terminals :Plated terminals,
SC−89 package which is designed for
solderable per MIL-STD-750,Method
low power surface mount
2026

applications.

Pb−Free Packages are Available

Moisture Sensitivity Level 1
Epoxy : UL94-V0 rated flame
retardant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
−45
V
Collector−Base Voltage
VCBO
−50
V
Emitter−Base Voltage
VEBO
−5.0
V
IC
−100
mAdc
Symbol
Max
Unit
200
mW
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
PD
1.6
mW/°C
600
°C/W
300
mW
2.4
mW/°C
RJA
400
°C/W
TJ, Tstg
−55 to
+150
°C
RJA
PD
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
2015.02
www.willas.com.tw
Rev.L0ϭ
P1
ϴϱϳdžddϭ
WEW^ŝůŝĐŽŶ'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌƐ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
−45
−
−
−50
−
−
−50
−
−
−5.0
−
−
ICBO
−
−
−
−
−15
−4.0
nA
A
hFE
−
−
−
90
150
270
−
−
−
−
125
220
420
180
290
520
250
475
800
−
−
−
−
−0.3
−0.65
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
fT
100
−
−
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
−
−
4.5
pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
OFF CHARACTERISTICS
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC857 Series
Collector −Emitter Breakdown Voltage
(IC = −10 A, VEB = 0)
BC857B Only
Collector −Base Breakdown Voltage
(IC = −10 A)
BC857 Series
Emitter −Base Breakdown Voltage
(IE = −1.0 A)
BC857 Series
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
V
ON CHARACTERISTICS
DC Current Gain
(IC = −10 A, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
BC857A
BC857B
BC857C
BC857A
BC857B
BC857C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
V
V
V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
2015.02
www.willas.com.tw
Rev.L0ϭ
P2
ϴϱϳdžddϭ
WEW^ŝůŝĐŽŶ'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌƐ
1.5
−1.0
−0.9
VCE = −10 V
TA = 25°C
TA = 25°C
VBE(sat) @ IC/IB = 10
−0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
−0.7
VBE(on) @ VCE = −10 V
−0.6
−0.5
−0.4
−0.3
−0.2
0.3
VCE(sat) @ IC/IB = 10
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
IC, COLLECTOR CURRENT (mAdc)
0
−0.1 −0.2
−100 −200
1.0
−2.0
TA = 25°C
−1.6
−1.2
−0.8
IC =
−10 mA
IC = −50 mA
IC = −20 mA
−0.4
0
−0.02
−0.1
−1.0
IB, BASE CURRENT (mA)
IC = −200 mA
IC = −100 mA
−10 −20
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−0.2
−1.0
−10
−100
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
2015.02
−100
−50
Figure 2. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
Figure 4. Base−Emitter Temperature Coefficient
www.willas.com.tw
Rev.L0ϭ
P3
ϴϱϳdžddϭ
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0
−10
−20 −30 −40
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
C, CAPACITANCE (pF)
WEW^ŝůŝĐŽŶ'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌƐ
400
300
200
150
VCE = −10 V
TA = 25°C
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (s)
Figure 7. Thermal Response
−200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
−100
−50
−10
−5.0
−2.0
−1.0
TA = 25°C
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve.
The data of Figure 8 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 7. At high case
or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limitations imposed by the secondary breakdown.
−5.0
−10
−30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 8. Active Region Safe Operating Area
2015.02
www.willas.com.tw
Rev.L0ϭ
P4
ϴϱϳdžddϭ
WEW^ŝůŝĐŽŶ'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌƐ
Outline Drawing
.067(1.70)
.059(1.5)
.008(0.20)
.004(0.10)
.031(0.80)
.024(0.60)
.043(1.10)
.035(0.90)
.012(0.30)MIN.
.040(0.95)
.030(0.75)
.067(1.70)
.059(1.50)
SC-89
.013(0.33)
.009(0.23)
Dimensions in inches and (millimeters)
Rev.D
2015.02
www.willas.com.tw
Rev.L0ϭ
P5
ϴϱϳdžddϭ
WEW^ŝůŝĐŽŶ'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌƐ
SC-89
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS
P0
K
D
t
E
Top Cover
Tape
B1
A0
F
P
Center Lines
of Cavity
Embossment
For Machine Reference Only
Including Draft and RADII
Concentric Around B0
D1
For Components
2.0mm x 1.2mm and Larger
User Direction of Feed
R Min
Bar Code Label
Tape and Components
Shall Pass Around
Radius “R”
Embossed Carrier
Bending Radius
Without Damage
100 mm
(3.937 ’’)
Maximum Component Rotation
1 mm Max
Typical Component
Cavity Center Line
o
W
B0
K0
See
Note 1
10
10 Pitches Cumulative Tolerance on
Tape ± 0.2mm( ± 0.008’’ )
P2
*Top Cover Tape
Thickness(t 1 )
0.10mm
(0.004’’ )Max.
Embossment
Tape
1 mm(.039’’ ) Max
250 mm
Typical Component
Center Line
(9.843’’)
Camber (Top View)
Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
DIMENSIONS
Tape
Size
8mm
B1 Max
D
D1
4.55mm
(.179’’)
1.5+0.1mm
- 0.0
1.0Min
(.039’’)
E
1.75 ± 0.1mm
(.069± .004)
F
3.5 ± 0.05mm
(.138±.002’’)
K
P0
2.4mm Max 4.0 ± 0.1mm
(.094’’)
(.157 ± .004’’)
P2
RMin TMax
WMax
2.0 ± 0.1mm
(.079 ± .002’’)
25mm 0.6mm
(.98’’) (.024’’)
8.3mm
(.327’’)
EMBOSSED TAPE AND REEL ORDERING INFORMATION
Package
Tape Width
(mm)
SC-89
8
Pitch
mm
(inch)
4.0 ± 0.1 (.157 ± .004)
Reel Size
mm (inch)
178
(7)
Devices Per Reel
and Minimum
Order Quantity
3,000
Metric dimensions govern - English are in parentheses for reference only.
NOTE 1: A 0 , B 0 , and K 0 are determined by component size. The clearance between the components and the cavity must be within
.05 mm min. to.50 mm max.,
NOTE 2: the component cannot rotate more than 10 o within the determined cavity.
NOTE 3: If B1 exceeds 4.2 mm (.165”) for 8 mm embossed tape, the tape may not feed through all tape feeders.
NOTE 4: Measure for 50+/-10 empty pockets at the tape leader using the ruler provided on the machine.
NOTE 5: At the end of counter units the handler will seal 110+/-10 empty pockets.
2015.02
www.willas.com.tw
Rev.L0ϭ
P6
ϴϱϳdžddϭ
WEW^ŝůŝĐŽŶ'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌƐ
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS
13.0mm ± 0.5mm
1.5mm Min
(.512 ±.002’’)
(.06’’)
A
T Max
Outside Dimension
Measured at Edge
50mm Min
(1.969’’)
20.2mm Min
(.795’’)
Full Radius
G
Inside Dimension
Measured Near Hub
Size
A Max
8 mm
178.0mm
(7.0’’)
G
8.4mm+1.5mm, -0.0
(.33’’+.039’’, -0.00)
T Max
10.9mm
(.43’’)
Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only
Storage Conditions
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)
Humidity: 30 to 80 RH (40 to 60 is preferred )
Recommended Period: One year after manufacturing
(This recommended period is for the soldering condition only. The
characteristics and reliabilities of the products are not restricted to
this limitation)
2015.02
www.willas.com.tw
Rev.L0ϭ
P7
ϴϱϳdžddϭ
WEW^ŝůŝĐŽŶ'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌƐ
Ordering Information:
Device PN
Part Number (1) H(2)‐WS
Packing
Tape&Reel: 3 Kpcs/Reel
Note: (1) Packing code, Tape & Reel Packing
(2) Halogen free product for packing code suffix “H”
***Disclaimer***
WILLAS reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. WILLAS or anyone on its behalf assumes no responsibility or liability
for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters
which may be included on WILLAS data sheets and/ or specifications can
and do vary in different applications and actual performance may vary over time.
WILLAS does not assume any liability arising out of the application or
use of any product or circuit.
This is the preliminary specification. WILLAS products are not designed, intended or
authorized for use in medical, life-saving implant or other applications intended for
life-sustaining or other related applications where a failure or malfunction of component
or circuitry may directly or indirectly cause injury or threaten a life without expressed
written approval of WILLAS. Customers using or selling WILLAS components for use in
such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc
and its subsidiaries harmless against all claims, damages and expenditures.
2015.02
www.willas.com.tw
Rev.L0ϭ
P8
Similar pages