MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G Power Rectifier http://onsemi.com Features and Benefits ULTRAFAST RECTIFIER 5.0 AMPERES 600 VOLTS Ultrafast 30 Nanosecond Recovery Times 175C Operating Junction Temperature High Temperature Glass Passivated Junction High Voltage Capability to 600 Volts AEC−Q101 Qualified and PPAP Capable SURHD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These are Pb−Free Devices* DPAK CASE 369C STYLES 3, 8 Applications Power Supplies Inverters Free Wheeling Diodes 1 4 3 4 3 STYLE 3 Mechanical Characteristics 1 Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 0.4 g (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds ESD Ratings: Machine Model = C (> 400 V) Human Body Model = 3B (> 8000 V) STYLE 8 MARKING DIAGRAMS AYWW AYWW UH560G 560W1G STYLE 3 STYLE 8 UH560 560W1 A Y WW G = MURHD560T4 = MURHD560W1T4 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MURHD560T4G DPAK (Pb−Free) 2,500 / Tape & Reel SURHD8560T4G DPAK (Pb−Free) 2,500 / Tape & Reel MURHD560W1T4G DPAK (Pb−Free) 2,500 / Tape & Reel SURHD8560W1T4G DPAK (Pb−Free) 2,500 / Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 7 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MURHD560/D MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 159C) IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction and Storage Temperature Range TJ, Tstg 5.0 50 −65 to +175 A A C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Symbol Value Unit Maximum Thermal Resistance, Junction to Case Rating RqJC 2.5 C/W Maximum Thermal Resistance, Junction to Ambient (Note 1) RqJA 49.5 C/W Value Unit 1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700 mm2 Cu area. ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 5.0 Amps, TC = 25C) (IF = 5.0 Amps, TC = 125C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 25C) (Rated dc Voltage, TC = 125C) IR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25C) trr 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 2.7 1.65 10 70 30 V mA ns MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G 100 IF, FORWARD CURRENT (AMPS) IF, FORWARD CURRENT (AMPS) 100 150C 10 125C 100C 1 25C 0.1 0.01 0 1.0 0.5 2.5 2.0 1.5 125C 25C 0.1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 6.0 IR, MAXIMUM REVERSE CURRENT (AMPS) 1.0E−3 IR, REVERSE CURRENT (AMPS) 150C 125C 1.0E−5 150C 1.0E−4 100C 1.0E−6 125C 100C 1.0E−5 1.0E−7 1.0E−6 1.0E−8 100 0 200 500 400 300 25C 1.0E−7 25C 600 1.0E−8 0 100 200 400 300 500 600 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 100 PFO, AVERAGE POWER DISSIPATION (WATTS) 20 90 C, CAPACITANCE (pF) 5.0 4.0 3.0 Figure 2. Maximum Forward Voltage 1.0E−4 80 70 60 50 40 30 20 10 0 2.0 1.0 VF, MAXIMUM FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1.0E−9 100C 1 0.01 3.0 150C 10 0 25 50 75 100 125 150 175 200 TJ = 175C 15 SQUARE WAVE 10 dc 5 0 0 1 2 3 4 5 6 7 VR, REVERSE VOLTAGE (VOLTS) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Typical Capacitance Figure 6. Forward Power Dissipation http://onsemi.com 3 8 IF, AVERAGE FORWARD CURRENT (AMPS) MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G 9 RqJC = 2.5C/W TJ = 175C dc 8 7 6 SQUARE WAVE 5 4 3 2 1 0 100 110 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (C) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Current Derating 10 0.5 1 0.2 0.1 0.05 0.1 0.01 P(pk) t1 Single Pulse t2 DUTY CYCLE, D = t1/t2 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 100 10 1000 t, TIME (s) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response, Junction to Case 100 10 1 0.5 0.2 0.1 0.05 0.01 P(pk) t1 0.1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 9. Thermal Response, Junction to Ambient http://onsemi.com 4 10 100 1000 MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 6.17 0.243 SCALE 3:1 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE 3.00 0.118 1.60 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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