Diode Semiconductor Korea FR301G --- FR307G VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A GLASS PASSIVATED RECTIFIERS FEATURES Low cost Glass passivated junction DO - 27 Low leakage Low forward voltage drop High current capability z Easily cleaned with Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Dimensions in millimeters Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FR301G FR302G FR303G FR304G FR305G FR306G FR307G UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 3.0 A IFSM 200.0 A VF 1.3 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @3.0A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 10.0 IR 150 Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ Typical thermal resistance (Note3) Operating junction temperature range Storage temperature range R A 200.0 JA 250 32.0 22.0 TJ - 55 ---- +175 TSTG - 55 ---- +175 500 ns pF ／Ｗ NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient www.diode.kr Diode Semiconductor Korea FR301G --- FR307G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC t rr 50 N 1. 10 N 1. +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm SET TIME BASE FOR 50/100 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . Single Phase Half Wave 60Hz Resistive or Inductive Load 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, FIG.3 -- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT AMPERES 3.0 AMPERES AVERAGE FORWARD RECTIFIED CURRENT FIG.2 --FORWARD DERATING CURVE 0.1 Pulse width=300 s 0.01 0.4 0.8 0.6 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 200 100 200 150 100 50 1 5 10 50 NUMBER OF CYCLES AT 60Hz 100 JUNCTION CAPACITANCE,pF 8.3ms Single Half Sine-Wave 250 0 TJ=25 1.0 FIG.5 -- TYPICAL JUNCTION CAPACITANCE 300 AMPERES PEAKFORWARD SURGE CURRENT FIG.4 --PEAK FORWARD SURGE CURRENT 10 60 40 20 10 6 4 TJ=25 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr