DSK FR306G Glass passivated rectifier Datasheet

Diode Semiconductor Korea
FR301G --- FR307G
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
GLASS PASSIVATED RECTIFIERS
FEATURES
Low cost
Glass passivated junction
DO - 27
Low leakage
Low forward voltage drop
High current capability
z
Easily cleaned with Alcohol,Isopropanol and similar
solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Dimensions in millimeters
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
FR301G FR302G FR303G FR304G FR305G FR306G FR307G UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
3.0
A
IFSM
200.0
A
VF
1.3
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage @3.0A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=100
10.0
IR
150
Maximum reverse recovery time
(Note1)
trr
Typical junction capacitance
(Note2)
CJ
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
R
A
200.0
JA
250
32.0
22.0
TJ
- 55 ---- +175
TSTG
- 55 ---- +175
500
ns
pF
/W
NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
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Diode Semiconductor Korea
FR301G --- FR307G
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t rr
50
N 1.
10
N 1.
+0.5A
D.U.T.
0
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-1.0A
1cm
SET TIME BASE FOR 50/100 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
AMPERES
3.0
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT
FIG.2 --FORWARD DERATING CURVE
0.1
Pulse width=300
s
0.01
0.4
0.8
0.6
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
200
100
200
150
100
50
1
5
10
50
NUMBER OF CYCLES AT 60Hz
100
JUNCTION CAPACITANCE,pF
8.3ms Single Half
Sine-Wave
250
0
TJ=25
1.0
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
300
AMPERES
PEAKFORWARD SURGE CURRENT
FIG.4 --PEAK FORWARD SURGE CURRENT
10
60
40
20
10
6
4
TJ=25
2
1
0.1 0.2
0.4
1
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
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