New Product B120 thru B160 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. PRIMARY CHARACTERISTICS Note • These devices are not AEC-Q101 qualified IF(AV) 1.0 A VRRM 20 V to 60 V IFSM 30 A VF 0.52 V, 0.75 V TJ max. 125 °C, 150 °C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code B120 B130 B140 B150 B160 B12 B13 B14 B15 B16 20 30 40 50 60 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Voltage rate of change (rated VR) dV/dt Operating junction temperature range 10 000 TJ Storage temperature range - 65 to + 125 V/μs - 65 to + 150 - 65 to + 150 TSTG V °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A Maximum reverse current at rated VR SYMBOL VF (1) TA = 25 °C TA = 100 °C IR (2) B120 B130 B140 0.52 B150 B160 0.75 0.2 6.0 5.0 UNIT V mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Document Number: 88946 Revision: 13-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product B120 thru B160 Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance B120 B130 B140 RθJA (1) 95 (1) 30 RθJL B150 B160 UNIT °C/W Note (1) P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE B140-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel B140-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 0.8 Resistive or Inductive Load B150 and B160 B150 and B160 1.0 0.8 B120 thru B140 0.6 0.4 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.2 D = 0.5 0.6 D = 0.3 0.5 D = 1.0 D = 0.2 D = 0.1 0.4 0.3 T 0.2 0.1 0 D = tp/T tp 0.8 1.0 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 1.2 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Forward Power Loss Characteristics 0.8 40 B120 thru B140 Peak Forward Surge Current (A) D = 0.8 0.7 Average Power Loss (W) D = 0.8 0.7 Average Power Loss (W) Average Forward Rectified Current (A) 1.2 D = 0.5 0.6 D = 0.3 0.5 D = 1.0 D = 0.2 D = 0.1 0.4 0.3 T 0.2 0.1 D = tp/T tp 0.8 1.0 30 20 10 0 0 0 0.2 0.4 0.6 1.2 1 10 100 Average Forward Current Number of Cycles at 50 Hz Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Instantaneous Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88946 Revision: 13-Oct-09 New Product B120 thru B160 Vishay General Semiconductor 100 000 TJ = 150 °C Instantaneous Reverse Current (μA) Instantaneous Forward Current (A) 10 TJ = 125 °C 1 TJ = 25 °C 0.1 B120 thru B140 B120 thru B140 B150 and B160 10 000 1000 100 TJ = 125 °C TJ = 25 °C 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Reverse Leakage Characteristics 10 1000 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 B120 thru B140 B150 and B160 B150 and B160 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 10 1 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 6 - Typical Instantaneous Forward Characteristics Fig. 8 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 88946 Revision: 13-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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