NTJD2152P Trench Small Signal MOSFET 8 V, Dual P−Channel, SC−88 ESD Protection http://onsemi.com Features • • • • • Leading –8 V Trench for Low RDS(ON) Performance ESD Protected Gate Small Footprint (2 x 2 mm) Same Package as SC−70−6 Pb−Free Packages are Available V(BR)DSS RDS(on) TYP ID Max 0.22 W @ −4.5 V −8 V −0.775 A 0.32 W @ −2.5 V 0.51 W @ −1.8 V Applications • • • • Load Power switching DC−DC Conversion Li−Ion Battery Charging Circuits Cell Phones, Media Players, Digital Cameras, PDAs SOT−363 SC−88 (6 LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS −8.0 V Gate−to−Source Voltage VGS ±8.0 V ID −0.775 A Parameter Continuous Drain Current (Based on RqJA) Steady State TA = 25 °C Power Dissipation (Based on RqJA) Steady State TA = 25 °C Continuous Drain Current (Based on RqJL) Steady State TA = 25 °C Power Dissipation (Based on RqJL) Steady State TA = 85 °C −0.558 PD TA = 85 °C 0.14 ID D1 G2 S2 −0.8 TA = 25 °C Pulsed Drain Current W 0.55 PD ±1.2 A TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) IS −0.775 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Operating Junction and Storage Temperature 1 6 TA M G G SC−88/SOT−363 0.29 IDM t ≤10 ms MARKING DIAGRAM & PIN ASSIGNMENT A −1.1 TA = 85 °C TA = 85 °C Top View W 0.27 CASE 419B STYLE 28 1 S1 G1 D2 TA M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Typ Max Unit ORDERING INFORMATION Junction−to−Ambient – Steady State RqJA 400 460 °C/W Junction−to−Lead (Drain) – Steady State RqJL 194 226 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: NTJD2152/D NTJD2152P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Symbol Test Condition Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −8.0 −10.5 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ −6.0 mV/°C Parameter Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −6.4 V 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V 10 mA VGS(TH) VGS = VDS, ID = −250 mA −1.0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS −0.45 −0.83 2.2 mV/ °C VGS = −4.5 V, ID = −0.57 A 0.22 0.3 VGS = −2.5 V, ID = −0.48 A 0.32 0.46 VGS = −1.8 V, ID = −0.20 A 0.51 0.9 VGS = −4.0 V, ID = −0.57 A 2.0 W S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = −8.0 V VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A 160 225 38 55 28 40 2.2 4.0 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 0.5 Gate−to−Drain Charge QGD 0.5 pF nC 0.1 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = −4.5 V, VDD = −4.0 V, ID = −0.5 A, RG = 8.0 W ns 13 23 td(OFF) 50 tf 36 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = −0.23 A TJ = 25°C 0.76 TJ = 125°C 0.63 VGS = 0 V, dIS/dt = 100 A/ms, IS = −0.77 A 2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 78 1.1 V ns NTJD2152P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = −4.5 V to −2.6 V VGS = −2.2 V −2 V −1.8 V 1 0.8 −1.6 V 0.6 0.4 −1.4 V 0.2 −1.2 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) 1.2 1.4 TJ = 25°C 0.5 2 4 6 VDS ≥ −10 V 1.2 1 0.8 0.6 TJ = 125°C 0.4 25°C 0.2 TJ = −55°C 0 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.6 0.4 0.8 1.2 2 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) 1.4 VGS = −4.5 V 0.4 0.3 TJ = 125°C TJ = 25°C 0.2 TJ = −55°C 0.1 0 0.2 0 0.6 0.8 0.4 1 −ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.5 TJ = 25°C 0.3 TJ = −55°C 0.2 0.1 0 0 0.2 0.6 0.4 0.8 1 −ID, DRAIN CURRENT (AMPS) 300 ID = −0.7 A VGS = −4.5 V and −2.5 V C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 125°C 1.2 1 0.8 −25 0 25 50 75 100 125 1.2 1.4 Figure 4. On−Resistance vs. Drain Current and Temperature 1.6 0.6 −50 VGS = −2.5 V 0.4 Figure 3. On−Resistance vs. Drain Current and Temperature 1.4 2.4 150 TJ = 25°C VGS = 0 V 240 Ciss 180 120 Coss 60 0 −8 Crss −6 −4 −2 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 0 NTJD2152P 5 0.7 QG(TOT) 4 −IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS 3 QGS 2 1 0 QGD ID = −0.6 A TJ = 25°C 0 0.4 0.8 1.2 1.6 2 Qg, TOTAL GATE CHARGE (nC) VGS = 0 V 0.6 0.5 0.4 0.3 0.2 TJ = 150°C 0.1 TJ = 25°C 0 2.4 0 0.2 0.4 0.6 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTJD2152P ORDERING INFORMATION Package Type Tape and Reel Size† NTJD2152PT1 SOT−363 3000 / Tape & Reel NTJD2152PT1G SOT−363 (Pb−Free) 3000 / Tape & Reel NTJD2152PT2 SOT−363 3000 / Tape & Reel NTJD2152PT2G SOT−363 (Pb−Free) 3000 / Tape & Reel NTJD2152PT4 SOT−363 10,000 / Tape & Reel NTJD2152PT4G SOT−363 (Pb−Free) 10,000 / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTJD2152P PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e A3 6 5 4 HE C −E− 1 2 DIM A A1 A3 b C D E e L HE 3 L b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 A SOLDERING FOOTPRINT* A1 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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