Kexin BAT17-05W Silicon schottky diode Datasheet

Diodes
SMD Type
Silicon Schottky Diode
BAT17-04W,BAT17-05W,BAT17-06W
Features
For mixer applications in VHF/UHF range
For high-speed switching application
Absolute M axim um Ratings Ta = 25
Param eter
Diode reverse voltage
Sym bol
Value
Unit
VR
4
V
IF
130
mA
P tot
150
mW
Tj
150
Operating tem perature range
T op
-55 to +125
Storage tem perature
T stg
-55 to +150
Forward current
Total power dissipation
92
TS
Junction tem perature
Junction - soldering point(Note 1)
R thJS
390
K/W
Note
1.For calculation of RthJA please refer to Application Note Therm al Resistance
Electrical Characteristics Ta = 25
Param eter
Sym bol
Breakdown voltage
Conditions
V (BR)
Reverse current
I (BR) = 10
IR
Min
A
Typ
VF
Forward voltage m atching(Note 1)
VR = 3 V
0.25
VR = 4 V
10
200
275
350
IF = 1 m A
250
340
450
I F = 10 m A
350
425
600
IF = 1 m A
Diode capacitance
CT
V R = 0 , f = 1 MHz
Differential forward resistance
RF
I F = 5 m A, f = 10 KHz
A
1.25
I F = 0.1 m A
ÄV F
Unit
V
V R = 3 V, T A = 60
Forward voltage
Max
4
0.4
mV
20
mV
0.55
0.75
pF
8
15
Note
1.ÄV F is the difference between lowest and highest V F in m ultiple diode com ponent.
Marking
Type
Marking
BAT17-04W BAT17-05W BAT17-06W
54S
55S
56S
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