APM2023N N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/12.8A , RDS(ON)=20mΩ(typ.) @ VGS=4.5V RDS(ON)=29mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • 2 3 G D S Reliable and Rugged TO-252 Package Top View of TO-252 Applications • 1 D Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G Ordering and Marking Information APM2023N Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 150 °C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM2023N U : APM2023N XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol S N-Channel MOSFET (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 ID* Maximum Drain Current – Continuous 12.8 IDM Maximum Drain Current – Pulsed 50 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 1 www.anpec.com.tw APM2023N Absolute Maximum Ratings (Cont.) Symbol Parameter PD Maximum Power Dissipation TJ Maximum Junction Temperature Rating TA=25°C 50 TA=100°C 10 TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Unit W 150 °C -55 to 150 °C 50 °C/W (TA = 25°C unless otherwise noted) Test Condition APM2023N Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=16V , VGS=0V VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current RDS(ON)a VSDa Drain-Source On-state VDS=VGS , IDS=250µA VGS=±12V , VDS=0V VGS=4.5V , IDS=12.8A Resistance Diode Forward Voltage 18 0.5 V 0.7 1 µA 1 V ±100 nA 20 23 VGS=2.5V , IDS=6.6A 29 35 ISD=1.7A , VGS=0V 0.8 1.1 VDS=10V , IDS= 6A 15 18 5.4 mΩ V b Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Gate-Source Charge Gate-Drain Charge Turn-on Delay Time VGS=4.5V , Tr Turn-on Rise Time Turn-off Delay Time VDD=10V , IDS=1A , td(OFF) VGEN =4.5V , RG=0.2Ω Tf Ciss Turn-off Fall Time Input Capacitance Coss Crss Output Capacitance VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz Notes a b VGS=0V nC 3 25 47 21 65 35 42 120 65 780 165 ns pF 105 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 2 www.anpec.com.tw APM2023N Typical Characteristics Output Characteristics Transfer Characteristics 30 50 45 ID-Drain Current (A) ID-Drain Current (A) 25 VGS=3,4,5,6,7,8,9,10V 40 35 30 25 VGS=2V 20 15 20 15 TJ=125°C 10 TJ=25°C 10 5 TJ=-55°C 5 0 0 1 2 3 4 5 6 7 8 9 0 0.0 10 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 0.050 1.50 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.045 0.040 0.035 VGS=2.5V 0.030 VGS=4.5V 0.025 0.020 0.015 -25 0 25 50 75 0.010 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 0 5 10 15 20 25 30 ID - Drain Current (A) 3 www.anpec.com.tw APM2023N Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 2.00 ID=6.6A 0.09 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.10 0.08 0.07 0.06 0.05 0.04 0.03 0.02 1.50 1.25 1.00 0.75 0.50 0.25 0.01 0.00 VGS=4.5V ID=12.8A 1.75 0 1 2 3 4 5 6 7 8 9 0.00 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 75 100 125 150 Capacitance 10 1200 V DS=10V ID=6A Frequency=1MHz 1000 Capacitance (pF) 8 6 4 Ciss 800 600 400 2 Coss 200 0 50 TJ - Junction Temperature (°C) Gate Charge VGS-Gate-Source Voltage (V) 25 Crss 0 5 10 15 20 0 25 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM2023N Typical Characteristics Source-Drain Diode Forward Voltage Single Pulse Power 30 80 60 TJ=150°C Power (W) IS-Source Current (A) 10 TJ=25°C 1 40 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.01 0.1 VSD -Source-to-Drain Voltage (V) 1 10 30 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DM ZthJA D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 5 www.anpec.com.tw APM2023N Packaging Information TO-252 (Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 0. 0 20 6 www.anpec.com.tw APM2023N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2023N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 F D 7.5 ± 0.1 1.5 +0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 2 ± 0.5 T1 16.4 + 0.3 -0.2 D1 Po 1.5± 0.25 4.0 ± 0.1 8 T2 P E 2.5± 0.5 W 16+ 0.3 - 0.1 8 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 www.anpec.com.tw APM2023N Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 9 www.anpec.com.tw