AOSMD AO4438 60v n-channel mosfet Datasheet

AO4438
60V N-Channel MOSFET
General Description
Product Summary
The AO4438 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
VDS (V) = 60V
ID = 8.2A (VGS = 10V)
RDS(ON) < 22mΩ (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current A
VGS
TA=25°C
TA=70°C
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
±20
V
ID
6.6
IDM
40
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
2
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
8.2
Pulsed Drain Current B
Power Dissipation
Maximum
60
RθJA
RθJL
Typ
24
54
21
°C
Max
40
75
30
Units
°C/W
°C/W
°C/W
AO4438
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
VGS=10V, ID=8.2A
TJ=125°C
VGS=4.5V, ID=7.6A
gFS
Forward Transconductance
VDS=5V, ID=8.2A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
100
nA
2.3
3
V
16.3
22
30
40
20
27
mΩ
1
V
3
A
A
24
0.74
1920
VGS=0V, VDS=30V, f=1MHz
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
60
VDS=60V, VGS=0V
IGSS
RDS(ON)
Typ
mΩ
S
2300
pF
155
pF
116
pF
0.65
0.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
47.6
58
nC
Qg(4.5V) Total Gate Charge
24.2
30
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=8.2A
VGS=10V, VDS=30V, RL=3.6Ω,
RGEN=3Ω
6
nC
14.4
nC
8.2
ns
5.5
ns
29.7
ns
5.2
IF=8.2A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8.2A, dI/dt=100A/µs
34
ns
41
53
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev4: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
30
4V
10V
25
4.5V
6V
VDS=5V
125°C
20
ID(A)
ID (A)
20
VGS=3.5V
10
15
10
25°C
5
0
0
0
1
2
3
4
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3.5
4
Normalized On-Resistance
2.2
VGS=4.5V
20
18
VGS=10V
16
14
2
VGS=10V
ID=8.2A
1.8
1.6
VGS=4.5V
ID=7.6A
1.4
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
1.0E+01
ID=8.2A
1.0E+00
40
125°C
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
3
VGS(Volts)
Figure 2: Transfer Characteristics
22
RDS(ON) (mΩ
Ω)
2
30
25°C
1.0E-03
25°C
20
1.0E-02
1.0E-04
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1.0E-05
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
3500
10
VDS=30V
ID=8.2A
3000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2500
2000
1500
Coss
1000
Crss
2
500
0
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
10.0
RDS(ON)
limited
100µs
30
1ms
10ms
0.1s
1.0
TJ(Max)=150°C
TA=25°C
10µs
1s
10s
30
20
10
TJ(Max)=150°C
TA=25°C
DC
0
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Zθ JA Normalized Transient
Thermal Resistance
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
40
Power (W)
ID (Amps)
100.0
5
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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