ECH8504 Ordering number : ENA1681 SANYO Semiconductors DATA SHEET ECH8504 PNP Epitaxial Planar Silicon Transistor Motor Drive Applications Features • • • Composite type, facilitating high-density mounting. Mounting height 0.9mm. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings -100 V -100 V VEBO IC -7 V -3 A ICP IB Base Current Collector Dissipation Unit VCBO VCEO Total Dissipation PC PT Junction Temperature Tj Storage Temperature Tstg -6 A -600 mA When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W When mounted on ceramic substrate (900mm2×0.8mm) 1.6 W 150 °C -55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7011A-008 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Top View Taping Type : TL 0.25 2.9 Marking 0.15 8 5 MD 2.3 4 1 0.65 Bot t om View Lot No. Electrical Connection 0.3 1 : Emitter1 2 : Base1 3 : Emitter2 4 : Base2 5 : Collector2 6 : Collector2 7 : Collector1 8 : Collector1 0.9 0.25 TL 0.07 2.8 0 t o 0.02 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 51910EA TK IM TC-00002335 No. A1681-1/4 ECH8504 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage VCE= -5V, IC= -100mA VCE= -10V, IC= -500mA Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Unit max 200 -1 μA -1 μA 560 250 MHz 28 IC= -1A, IB= -100mA pF -75 -130 mV -0.85 -1.2 V V(BR)CBO V(BR)CEO IC= -10μA, IE=0A -100 IC= -1mA, RBE=∞ -100 V V(BR)EBO ton IE= -10μA, IC=0A -7 V tstg tf Fall Time typ VCB= -10V, f=1MHz IC= -1A, IB= -100mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage min VCB= -80V, IE=0A VEB= -4V, IC=0A fT Cob Output Capacitance Ratings Conditions V See specified Test Circuit. 25 See specified Test Circuit. 420 ns ns See specified Test Circuit. 20 ns Note) The specifications shown above are for each individual transistor. Switching Time Test Circuit IB1 PW=20μs D.C.≤1% VOUT IB2 INPUT RB VR 50Ω RL + + 100μF 470μF VBE=5V VCC= --50V IC= --10IB1=10IB2= --1A --0.6 --1.8 A --10m --8mA --6mA 6 --1 --0.5 --4mA --2mA A --0.4 mA --14 --0.3 --12m --0.2 A 0m --7 mA 0 --5 mA --20mA --30 --10mA --6mA --4mA --1.4 --1.2 A --8m --1.0 --2mA --0.8 --0.6 --0.4 --0.2 --0.1 0 --1.6 IC -- VCE --100mA m mA m --18 Collector Current, IC -- A --0.7 A --2 --3 0 50mA A --70mA -- --0.8 --2.0 0mA --100m Collector Current, IC -- A --0.9 A IC -- VCE --1.0 IB=0mA 0 --0.1 --0.2 --0.3 --0.4 Collector-to-Emitter Voltage, VCE -- V --0.5 IT15458 0 IB=0mA 0 --1 --2 --3 --4 Collector-to-Emitter Voltage, VCE -- V --5 IT15459 No. A1681-2/4 ECH8504 IC -- VBE --3.0 5 DC Current Gain, hFE 25 ° C --1.0 --25°C --1.5 Ta=75° C Collector Current, IC -- A --2.0 --0.5 Ta=75°C 3 25°C --25°C 2 100 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 10 --0.01 --1.2 2 3 5 7 --0.1 2 3 5 7 --1.0 Output Capacitance, Cob -- pF 2 100 7 5 3 2 5 f=1MHz VCE= --10V 3 3 IT15461 Cob -- VCB 2 5 100 7 5 3 2 10 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 7 --1.0 5 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V IT15462 VCE(sat) -- IC 5 VBE(sat) -- IC 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 --100 7 25 5 °C 5°C =7 Ta 5°C --2 3 2 7 --100 IT15463 IC / IB=10 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 Collector Current, IC -- A IT15460 f T -- IC 7 Gain-Bandwidth Product, f T -- MHz VCE= --5V 7 --2.5 0 hFE -- IC 1000 VCE= --5V 2 --1.0 Ta= --25°C 7 75°C 5 25°C 3 --10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A IC= --3A --1.0 7 5 3 2 50 0μ s s DC op 10 0m era 0μ s ms n( Ta = 25 °C ) --0.1 7 5 3 2 --0.01 7 5 3 Ta=25°C 2 Single pulse --0.001 --0.1 2 3 5 7 --1.0 5 7 --0.1 2 3 5 7 --1.0 2 3 5 IT15465 PC -- Ta When mounted on ceramic substrate (900mm2×0.8mm) 1.6 10 10 s tio 3 1.8 ICP= --6A 1m 2 Collector Current, IC -- A Collector Dissipation, PC -- W Collector Current, IC -- A --10 7 5 3 2 2 --0.01 5 IT15464 Forward Bias A S O 2 3 1.4 1.3 1.2 To t al 1.0 Di ss ip nit atio 1u 0.8 n 0.6 0.4 0.2 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- 5 7--100 2 V IT15466 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15457 No. A1681-3/4 ECH8504 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2010. Specifications and information herein are subject to change without notice. PS No. A1681-4/4