ZP DMN2050L N-channel enhancement mode mosfet Datasheet

DMN2050L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
UCT
•
•
•
•
•
•
•
Mechanical Data
•
•
Low On-Resistance
•
29mΩ @VGS = 4.5V
•
50mΩ @VGS = 2.5V
•
100mΩ @VGS = 2.0V
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 6)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
•
•
•
•
SOT-23
Drain
D
Gate
Source
TOP VIEW
Maximum Ratings
Equivalent Circuit
S
G
TOP VIEW
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Symbol
VDSS
VGSS
ID
IDM
Value
20
±12
5.9
21
Units
V
V
A
A
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Units
W
°C/W
°C
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, on 2oz Copper pad layout with RθJA = 90°C/W.
2. No purposefully added lead. Halogen and Antimony Free.
3. Repetitive rating, pulse width limited by junction temperature.
[email protected]
www.zpsemi.com
1 of 2
DMN2050L
N-CHANNEL ENHANCEMENT MODE MOSFET
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
⎯
⎯
⎯
⎯
⎯
⎯
1
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
0.45
⎯
1.4
V
29
50
100
mΩ
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID = 3.1A
VGS = 2.0V, ID = 1.5A
VDS =5V, ID = 2.1A
VGS = 0V, IS = 2.0A
Static Drain-Source On-Resistance
RDS (ON)
⎯
24
42
68
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
|Yfs|
VSD
⎯
⎯
8
0.9
⎯
1.4
S
V
Ciss
Coss
Crss
RG
⎯
⎯
⎯
⎯
532
144
117
1.3
⎯
⎯
⎯
⎯
pF
pF
pF
Ω
Qg
Qgs
Qgd
⎯
⎯
⎯
6.7
0.8
3.0
⎯
⎯
⎯
nC
Notes:
Test Condition
VDS = 10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 10V, VGS = 4.5V, ID = 5.0A
VDS = 10V, VGS = 4.5V, ID = 5.0A
VDS = 10V, VGS = 4.5V, ID = 5.0A
4. Short duration pulse test used to minimize self-heating effect.
5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
[email protected]
www.zpsemi.com
2 of 2
Similar pages