DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Features UCT • • • • • • • Mechanical Data • • Low On-Resistance • 29mΩ @VGS = 4.5V • 50mΩ @VGS = 2.5V • 100mΩ @VGS = 2.0V Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 6) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) • • • • SOT-23 Drain D Gate Source TOP VIEW Maximum Ratings Equivalent Circuit S G TOP VIEW @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4) Symbol VDSS VGSS ID IDM Value 20 ±12 5.9 21 Units V V A A Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Units W °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, on 2oz Copper pad layout with RθJA = 90°C/W. 2. No purposefully added lead. Halogen and Antimony Free. 3. Repetitive rating, pulse width limited by junction temperature. [email protected] www.zpsemi.com 1 of 2 DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.45 ⎯ 1.4 V 29 50 100 mΩ VDS = VGS, ID = 250μA VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 3.1A VGS = 2.0V, ID = 1.5A VDS =5V, ID = 2.1A VGS = 0V, IS = 2.0A Static Drain-Source On-Resistance RDS (ON) ⎯ 24 42 68 Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge |Yfs| VSD ⎯ ⎯ 8 0.9 ⎯ 1.4 S V Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 532 144 117 1.3 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Qg Qgs Qgd ⎯ ⎯ ⎯ 6.7 0.8 3.0 ⎯ ⎯ ⎯ nC Notes: Test Condition VDS = 10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 10V, VGS = 4.5V, ID = 5.0A VDS = 10V, VGS = 4.5V, ID = 5.0A VDS = 10V, VGS = 4.5V, ID = 5.0A 4. Short duration pulse test used to minimize self-heating effect. 5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. [email protected] www.zpsemi.com 2 of 2