FFM101-M THRU FFM107-M 星合电子 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Fast recovery type Features SOD-123 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. For surface mounted applications. 0.071(1.8) 0.055(1.4) Exceeds environmental standards of MIL-S-19500 / 228 0.110(2.8) 0.094(2.4) Low leakage current. 0.063(1.6) 0.055(1.4) 0.035(0.9) Typ. Mechanical data 0.035(0.9) Typ. Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC SOD123 / MINI SMA Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.04 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol o Forward rectified current Ambient temperature = 55 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 1.0 A IFSM 30 A 5.0 uA 100 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage TSTG V RRM *1 V RMS (V) (V) *2 VR *3 (V) FFM101-M F1 50 35 50 FFM102-M F2 100 70 100 FFM103-M F3 200 140 200 FFM104-M F4 400 280 400 FFM105-M F5 600 420 600 FFM106-M F6 800 560 800 FFM107-M F7 1000 700 1000 VF *4 (V) T RR *5 (nS) C / w 15 -55 pF +150 o C Operating temperature ( o C) 150 *1 Repetitive peak reverse voltage 1.3 -55 to +150 *2 RMS voltage 250 *3 Continuous reverse voltage 500 *4 Maximum forward voltage *5 Reverse recovery time 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． uA o 42 CJ Storage temperature MARKING CODE TYP. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS MIN. ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ FFM101-M THRU FFM107-M 星合电子 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Fast recovery type RATING AND CHARACTERISTIC CURVES (FFM101-M THRU FFM107-M) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 3.0 1.0 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 20 40 Tj=25 C 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) Pulse Width 300us 1% Duty Cycle 0.1 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .01 .6 .8 1.0 1.2 1.4 1.6 1.8 PEAK FORWAARD SURGE CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) 50 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) 50 40 30 Sine Wave 20 JEDEC method 10 0 1 5 (+) 1W NONINDUCTIVE 100 FIG.5-TYPICAL JUNCTION CAPACITANCE NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. JUNCTION CAPACITANCE,(pF) 35 trr | | | | | | | | 0 50 10 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) +0.5A 8.3ms Single Half Tj=25 C -0.25A 30 25 20 15 10 5 0 -1.0A 1cm SET TIME BASE FOR .01 .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 50 / 10ns / cm 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ 50 100