Diodes DMDT9922 Pnp dual, matched pair surface mount transistor Datasheet

DMDT9922
PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR
ADVANCE INFORMATION
Features
·
·
·
·
Epitaxial Planar Die Construction
Low Noise
High Current Gain
Matched Pair of Transistors
SOT-363
A
C2
·
·
·
E1
KXX
Mechanical Data
·
·
B1
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K3S
Weight: .006 grams (approx.)
E2
B2
B C
C1
H
K
M
J
D
F
L
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
DMDT9922
Unit
Collector-Base Voltage
Characteristic
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector-Collector Voltage
VCCO
-50
V
Emitter-Emitter Voltage
VEEO
-50
V
IC
-100
mA
Pd
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
200
mW
RqJA
625
K/W
Tj, TSTG
-55 to +125
°C
D
E
V
O
R
P OR N
P
A T F IO
N
T
U NO
U
B
I
R
T
S
DI
DS30142 Rev. 1P-5
1 of 2
DMDT9922
ADVANCE INFORMATION
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-50
¾
¾
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
¾
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
¾
V
IE = -50mA, IC = 0
Collector-Base Leakage Current
ICBO
¾
-0.3
-500
nA
VCB = -30V
Emitter-Base Leakage Current
IEBO
¾
¾
-500
nA
VEB = -4.0V
Collector-Emitter Leakage Current
ICES
¾
-4
-1000
nA
VCE = -40V
OFF CHARACTERISTICS (Note 2)
IC = -50mA, IE = 0
ON CHARACTERISTICS (Note 2)
hFE
300
450
555
¾
IC = -1.0mA, VCE = -6.0V
VCE(SAT)
VCE(SAT)
¾
¾
-0.1
-0.1
-0.5
¾
V
V
IC = -50mA, IB = -5.0mA
IC = -1mA, IB = -0.1mA
Base-Emitter Impedance
rbe
¾
-0.5
¾
W
IC = -10mA to -1mA
Emitter-Base Offset Voltage
VOS
¾
10
¾
mV
VCB = 0V, IC = -1mA to -1mA
Change in Emitter-Base Offset Voltage vs. Collector-Base
Voltage (CMRR)
DVOS/
DVCB
¾
10
¾
mV
VCB = 0V, IC = -1mA to -1mA
Change in Emitter-Base Offset Voltage vs.
Collector-Current
DVOS/
DIC
¾
5
¾
mV
VCB = 0V, IC = -10mA to -1mA
TC VOS
¾
0.5
¾
mV/°C
DC Current Gain
Collector-Emitter Saturation Voltage
Average Offset Voltage Drift
Emitter-Base Offset Current
Change in Emitter-Base Offset Current vs. Collector-Base
Voltage
Average Offset Current Drift
Collector-Collector Leakage Current
IC = -10mA to -1mA
IOS
¾
8
¾
nA
IC = -10mA, VCB = 0V
DIOS/
DVCB
¾
30
¾
nA
VCB = 0 to -50V
TC IOS
¾
50
¾
pA/°C
IC = -10mA
ICC
¾
35
¾
pA
VCE = -40V
-4
15
pF
VCB = -10V, f = 1.0MHz, IE = 0
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
Input Capacitance
Cibo
¾
¾
70
pF
VEB = -0.5V, IC = 0, f = 1MHz
Output Conductance
hOE
¾
10
¾
mS
IC = -1mA, VCE = -5V
170
¾
MHz
Current Gain-Bandwidth Product
Notes:
fT
VCE = -12V, IC = -2.0mA,
f = 100MHz
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
D
E
V
O
R
P OR N
P
A T F IO
N
T
U NO
U
B
I
R
T
S
DI
DS30142 Rev. 1P-5
2 of 2
DMDT9922
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