MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G www.onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. SOT−23 (TO−236) CASE 318 1 ANODE Features 3 CATHODE/ANODE • Very Low Capacitance − Less Than 1.0 pF @ Zero V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MMBD352LT1G STYLE 11 1 CATHODE 3 CATHODE/ANODE Continuous Reverse Voltage Symbol Value Unit VR 7.0 VCC Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2 ANODE MMBD354LT1G NSVMMBD354LT1G STYLE 9 1 CATHODE THERMAL CHARACTERISTICS Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C 1 ANODE 3 CATHODE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Characteristic 2 ANODE MMBD353LT1G NSVMMBD353LT1G STYLE 19 MAXIMUM RATINGS (EACH DIODE) Rating 2 CATHODE ANODE 3 Symbol Max Unit MMBD355LT1G STYLE 12 PD 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C RqJA 2 CATHODE MARKING DIAGRAM PD 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Mxx M G G 1 Mxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 9 1 Publication Order Number: MMBD352LT1/D MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Symbol Rating Forward Voltage (IF = 10 mAdc) VF Reverse Leakage Current (Note 3) (VR = 3.0 V) (VR = 7.0 V) IR Capacitance (VR = 0 V, f = 1.0 MHz) C Min Max − 0.60 − − 0.25 10 − 1.0 Unit V mA pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased. ORDERING INFORMATION Device MMBD352LT1G MMBD352LT3G MMBD353LT1G NSVMMBD353LT1G MMBD353LT3G MMBD354LT1G NSVMMBD354LT1G MMBD355LT1G Marking Package Shipping† M5G SOT−23 (Pb−Free) 3,000 Units / Tape & Reel M5G SOT−23 (Pb−Free) 10,000 Units / Tape & Reel M4F SOT−23 (Pb−Free) 3,000 Units / Tape & Reel M4F SOT−23 (Pb−Free) 3,000 Units / Tape & Reel M4F SOT−23 (Pb−Free) 10,000 Units / Tape & Reel M6H SOT−23 (Pb−Free) 3,000 Units / Tape & Reel M6H SOT−23 (Pb−Free) 3,000 Units / Tape & Reel MJ1 SOT−23 (Pb−Free) 3,000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS 1.0 TA = 85°C C, CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 10 TA = -40°C 1.0 TA = 25°C 0.1 0.9 0.8 0.7 0.6 0.3 0.4 0.5 0.6 0.7 0.8 0 1.0 2.0 3.0 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Capacitance www.onsemi.com 2 4.0 MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ END VIEW MMBD352LT1G STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE RECOMMENDED SOLDERING FOOTPRINT* MMBD353LT1G NSVMMBD353LT1G STYLE 19: PIN 1. CATHODE 2. ANODE 3. CATHODE−ANODE 3X 2.90 0.90 MMBD354LT1G NSVMMBD354LT1G STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE 3X MMBD355LT1G STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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