ON NRVBS410LT3G Surface mount schottky power rectifier Datasheet

MBRS410L, NRVBS410L
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Typical applications are AC−DC and DC−DC converters, reverse
battery protection, and “ORing” of multiple supply voltages and any
other application where performance and size are critical.
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SCHOTTKY BARRIER
RECTIFIERS
4.0 AMPERES, 10 VOLTS
Features
•
•
•
•
•
•
•
•
•
•
Ultra Low VF
1st in the Market Place with a 10 VR Schottky Rectifier
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
NRVBS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Ratings:
Machine Model = C
Human Body Model = 3B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
10
V
Average Rectified Forward Current
(@ TL = 110°C)
IO
4.0
A
IFSM
150
A
TJ
−65 to +125
°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
SMC
CASE 403
MARKING DIAGRAM
AYWW
B4L1G
G
B4L1
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MBRS410LT3G
SMC
(Pb−Free)
2500 / Tape & Reel
NRVBS410LT3G
SMC
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 4
1
Publication Order Number:
MBRS410LT3/D
MBRS410L, NRVBS410L
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min Pad (Note 2)
1 Inch Pad
Unit
°C/W
Thermal Resistance,
Junction−to−Lead
Thermal Resistance,
Junction−to−Ambient
RqJL
12
7.0
RqJA
109
59
VF
TJ = 25°C
TJ = 100°C
0.31
0.33
0.35
0.200
0.225
0.250
TJ = 25°C
TJ = 100°C
2.0
5.0
100
200
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 2.0 A)
(IF = 4.0 A)
(IF = 8.0 A)
Maximum Instantaneous Reverse Current (Note 1)
IR
(Rated dc Voltage, VR = 5.0 V)
(Rated dc Voltage, VR = 10 V)
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Mounted with Minimum Recommended Pad Size, PC Board FR4.
100
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
VF @ 125°C
10
100°C
1
75°C
25°C
−40°C
10
VF @ 125°C
100°C
1
75°C
0.1
25°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0
VF, INSTANTANEOUS VOLTAGE (V)
0.1
0.2
0.3
0.4
0.5
VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10000
1.00E+00
f = 1 Mhz
C, CAPACITANCE (pF)
IR, REVERSE CURRENT (A)
IR @ 125°C
1.00E−01
100°C
75°C
1.00E−02
1.00E−03
25°C
25°C
1000
1.00E−04
0
2
4
6
8
10
0
2
4
6
8
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
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2
10
MBRS410L, NRVBS410L
PFO, AVERAGE POWER DISSIPATION (W)
9
IF, AVERAGE FORWARD
CURRENT (A)
8
7
dc
6
5
4
SQUARE WAVE
3
2
1
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
0
100
105
110
115
120
125
130
2
1.8
dc
1.6
1.4
1.2
1
0.8
SQUARE WAVE
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating (Junction−to−Lead)
Figure 6. Forward Power Dissipation
8
9
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
t, TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Figure 7. Thermal Response, Junction−to−Ambient (min pad)
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad)
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3
MBRS410L, NRVBS410L
PACKAGE DIMENSIONS
SMC
CASE 403−03
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03.
HE
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
MIN
1.90
0.05
2.92
0.15
5.59
6.60
7.75
0.76
MILLIMETERS
NOM
MAX
2.13
2.41
0.10
0.15
3.00
3.07
0.23
0.30
5.84
6.10
6.86
7.11
7.94
8.13
1.02
1.27
0.51 REF
MIN
0.075
0.002
0.115
0.006
0.220
0.260
0.305
0.030
INCHES
NOM
0.084
0.004
0.118
0.009
0.230
0.270
0.313
0.040
0.020 REF
MAX
0.095
0.006
0.121
0.012
0.240
0.280
0.320
0.050
A
L
L1
c
A1
SOLDERING FOOTPRINT*
4.343
0.171
3.810
0.150
2.794
0.110
SCALE 4:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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MBRS410LT3/D
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