AOD458 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD458 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD458 is Pb-free (meets ROHS & Sony 259 specifications). AOD458L is a Green Product ordering option. AOD458 and AOD458L are electrically identical. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 5mΩ (VGS = 4.5V) 193 18 TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current C C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C V A 200 IAR 45 A EAR 330 mJ 60 50 2.7 W 1.9 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 25 PDSM Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 ID IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Units V 85 TC=100°C Pulsed Drain Current Avalanche Current G Maximum 30 RθJA RθJC Typ 15 44 1.8 Max 20 55 3 Units °C/W °C/W °C/W AOD458 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=250uA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V V 3.2 4 5 6 VGS=4.5V, ID=20A 3.8 5 VDS=5V, ID=20A 107 1 100 VGS=10V, ID=20A TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge µA 5 nA Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance V 3 VSD Crss 1 100 Forward Transconductance Coss 0.002 Units 1.7 gFS IS Max TJ=55°C VGS(th) Static Drain-Source On-Resistance Typ 30 VDS=24V, VGS=0V IGSS RDS(ON) Min A 0.72 5750 VGS=0V, VDS=15V, f=1MHz mΩ S 1 V 50 A 7500 pF 640 pF 370 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A 0.4 pF 1 Ω 41 nC 18 nC Qgd Gate Drain Charge 10 tD(on) Turn-On DelayTime 13.5 19 ns tr Turn-On Rise Time 14 20 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC 58 80 ns 13.5 19 ns 55 ns nC trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 39 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 39 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0:Nov 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD458 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 4.5V 80 VDS=5V 80 60 60 3.0V ID(A) ID (A) 100 10V 40 VGS=2.5V 20 40 125°C 593 830 0 0 1 2 3 4 5 1 2 3 5 5 193 18 Normalized On-Resistance 2.0 VGS=4.5V 4 3 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics RDS(ON) (mΩ) 25°C 494 692 20 0 4.63 VGS=10V 1.8 1.6 VGS=10V, 20A 1.4 1.2 VGS=4.5V, 20A 1.0 2 0 10 20 30 40 50 0.8 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 59 100 142 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 12 10 10 1 IS (A) ID=20A RDS(ON) (mΩ) 25 8 125°C 6 125°C 0.1 0.01 25°C 0.001 4 0.0001 25°C 0.00001 2 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD458 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 9000 5 7000 Capacitance (pF) VGS (Volts) 8000 VDS=15V ID=20A 4 3 2 Ciss 6000 5000 4.63 4000 3000 Coss 2000 1 494 692 Crss 1000 0 593 830 0 0 10 20 30 40 50 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 193 18 1000 200 TJ(Max)=175°C, TC=25°C 10µs 160 ID (Amps) 100µs DC RDS(ON) limited 1ms 1 0.1 1 10 100 VDS (Volts) 120 80 0 0.0001 0.001 0.01 59 0.1 142 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJC Normalized Transient Thermal Resistance TJ(Max)=175°C TC=25°C 40 0.1 10 Power (W) 100 10 25 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD458 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 90 Power Dissipation (W) ID(A), Peak Avalanche Current 100 80 70 60 50 40 30 TA=25°C 20 10 50 40 30 4.63 20 494 692 10 0 0.0001 0.001 0 25 50 75 100 125 150 100 50 80 40 193 18 TA=25°C Power (W) Tj=150°C 60 40 30 20 10 20 0 0.01 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.1 1 59 142 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZθJA Normalized Transient Thermal Resistance 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability Current rating ID(A) 593 830 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.00001 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000