AOSMD AOD458 N-channel enhancement mode field effect transistor Datasheet

AOD458
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD458 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOD458 is Pb-free (meets ROHS & Sony
259 specifications). AOD458L is a Green Product
ordering option. AOD458 and AOD458L are
electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 4mΩ (VGS = 10V)
RDS(ON) < 5mΩ (VGS = 4.5V)
193
18
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
C
C
Repetitive avalanche energy L=0.3mH
C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
V
A
200
IAR
45
A
EAR
330
mJ
60
50
2.7
W
1.9
TJ, TSTG
°C
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
25
PDSM
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±12
ID
IDM
PD
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Units
V
85
TC=100°C
Pulsed Drain Current
Avalanche Current
G
Maximum
30
RθJA
RθJC
Typ
15
44
1.8
Max
20
55
3
Units
°C/W
°C/W
°C/W
AOD458
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
ID=250uA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
V
3.2
4
5
6
VGS=4.5V, ID=20A
3.8
5
VDS=5V, ID=20A
107
1
100
VGS=10V, ID=20A
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
µA
5
nA
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
V
3
VSD
Crss
1
100
Forward Transconductance
Coss
0.002
Units
1.7
gFS
IS
Max
TJ=55°C
VGS(th)
Static Drain-Source On-Resistance
Typ
30
VDS=24V, VGS=0V
IGSS
RDS(ON)
Min
A
0.72
5750
VGS=0V, VDS=15V, f=1MHz
mΩ
S
1
V
50
A
7500
pF
640
pF
370
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=20A
0.4
pF
1
Ω
41
nC
18
nC
Qgd
Gate Drain Charge
10
tD(on)
Turn-On DelayTime
13.5
19
ns
tr
Turn-On Rise Time
14
20
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
nC
58
80
ns
13.5
19
ns
55
ns
nC
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
39
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
39
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0:Nov 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
4.5V
80
VDS=5V
80
60
60
3.0V
ID(A)
ID (A)
100
10V
40
VGS=2.5V
20
40
125°C
593
830
0
0
1
2
3
4
5
1
2
3
5
5
193
18
Normalized On-Resistance
2.0
VGS=4.5V
4
3
4
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
RDS(ON) (mΩ)
25°C
494
692
20
0
4.63
VGS=10V
1.8
1.6
VGS=10V, 20A
1.4
1.2
VGS=4.5V, 20A
1.0
2
0
10
20
30
40
50
0.8
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75 59 100
142
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
12
10
10
1
IS (A)
ID=20A
RDS(ON) (mΩ)
25
8
125°C
6
125°C
0.1
0.01
25°C
0.001
4
0.0001
25°C
0.00001
2
2
3
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
9000
5
7000
Capacitance (pF)
VGS (Volts)
8000
VDS=15V
ID=20A
4
3
2
Ciss
6000
5000
4.63
4000
3000
Coss
2000
1
494
692
Crss
1000
0
593
830
0
0
10
20
30
40
50
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
193
18
1000
200
TJ(Max)=175°C, TC=25°C
10µs
160
ID (Amps)
100µs
DC
RDS(ON)
limited
1ms
1
0.1
1
10
100
VDS (Volts)
120
80
0
0.0001
0.001
0.01
59 0.1
142
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
ZθJC Normalized Transient
Thermal Resistance
TJ(Max)=175°C
TC=25°C
40
0.1
10
Power (W)
100
10
25
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
90
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
80
70
60
50
40
30
TA=25°C
20
10
50
40
30
4.63
20
494
692
10
0
0.0001
0.001
0
25
50
75
100
125
150
100
50
80
40
193
18
TA=25°C
Power (W)
Tj=150°C
60
40
30
20
10
20
0
0.01
0
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
0.1
1
59
142 10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10
ZθJA Normalized Transient
Thermal Resistance
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
Current rating ID(A)
593
830
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
0.00001
Ton
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
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