DATA SHEET C103Y C103YY C103A C103B SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=60°C) Peak One Cycle Surge Peak Forward Gate Current Peak Reverse Gate Voltage Peak Gate Power Dissipation (tp=8.3ms) Average Gate Power Dissipation Storage Temperature Junction Temperature SYMBOL VDRM, VRRM IT(RMS) ITSM IGM VGM PGM PG(AV) Tstg TJ C103Y 30 C103YY C103A 60 100 0.8 8.0 0.5 8.0 1.0 0.01 -65 to +150 -65 to +125 C103B 200 UNITS V A A A V W W °C °C ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) SYMBOL IDRM, IRRM IDRM, IRRM TEST CONDITIONS Rated VDRM, VRRM, RGK=1KΩ IGT IGT VD=6.0V, RL=100Ω, RGK=1KΩ VD=6.0V, RL=100Ω, RGK=1KΩ, TC=-65°C IH IH RGK=1KΩ 5.0 mA RGK=1KΩ, TC=-65°C 10 mA VGT VGT VD=6.0V, RL=100Ω VD=6.0V, RL=100Ω, TC=-65°C 0.8 V 1.0 V VGT VTM VD=6.0V, RL=1KΩ, TC=125°C ITM=1.0A 1.5 V V dv/dt VD=VDRM, TC=125°C, RGK=1KΩ MIN TYP Rated VDRM, VRRM, TC=125°C, RGK=1KΩ MAX 1.0 UNITS µA 50 µA 200 µA 500 µA 0.1 20 V/µs (SEE REVERSE SIDE) R0 C103 SERIES SILICON CONTROLLED RECTIFIER TO-92 PACKAGE - MECHANICAL OUTLINE A B 123 SYMBOL A (DIA) B C D E F G H I C D Lead Code: E F G H I DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.022 0.41 0.56 0.100 2.54 0.050 1.27 0.125 0.165 3.18 4.19 0.080 0.105 2.03 2.67 0.015 0.38 TO-92 (REV: R1) R1 1) Anode 2) Gate 3) Cathode