FS50KM-3 High-Speed Switching Use Nch Power MOS FET REJ03G1419-0200 (Previous: MEJ02G0117-0101) Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 10 V VDSS : 150 V rDS(ON) (max) : 31 mΩ ID : 50 A Integrated Fast Recovery Diode (TYP.) : 130 ns Viso : 2000 V Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 1. Gate 2. Drain 3. Source 1 1 2 3 3 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Ratings 150 ±20 50 200 50 50 200 35 – 55 to +150 Unit V V A A A A A W °C Tstg Viso – 55 to +150 2000 °C V — 2.0 g Storage temperature Isolation voltage Mass Rev.2.00 Aug 07, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 100 µH AC for 1 minute, Terminal to case Typical value FS50KM-3 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Rev.2.00 Aug 07, 2006 Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr page 2 of 6 Min 150 — — 2.0 — — — — — — — — — — — — — Typ — — — 3.0 24 0.600 55 6540 860 360 95 155 380 180 1.0 — 130 Max — ±0.1 0.1 4.0 31 0.775 — — — — — — — — 1.5 3.57 — Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns Test Conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 80 V, ID = 25 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 25 A, VGS = 0 V Channel to case IS = 50 A, dis/dt = – 100 A/µs FS50KM-3 Performance Curves Maximum Safe Operating Area Power Dissipation Derating Curve 3 2 30 20 10 0 50 100 150 0µ s = 10 µs D 101 7 5 3 2 C 100 7 Tc = 25°C 5 Single Pulse 3 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) VGS = 20V 10V 8V 100 Tc = 25°C Pulse Test 40 5V 20 Tc = 25°C Pulse Test 6V 6V 80 60 10V 7V 50 7V Drain Current ID (A) 200 VGS = 20V Drain Current ID (A) 0 102 7 5 3 2 s Drain Current ID (A) 40 tw 10 1m Power Dissipation PD (W) 50 40 5V 30 20 PD = 35W 10 PD = 35W 4V 0 1.0 2.0 3.0 4.0 5.0 0.8 1.2 1.6 2.0 On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) 1.6 80A 1.2 50A 0.8 0.4 20A Tc = 25°C Pulse Test 4 8 12 16 Gate-Source Voltage VGS (V) Rev.2.00 0.4 Drain-Source Voltage VDS (V) ID = 100A 0 0 Drain-Source Voltage VDS (V) 2.0 0 0 Aug 07, 2006 page 3 of 6 20 Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) 0 40 Tc = 25°C Pulse Test 32 24 VGS = 10V 20V 16 8 0 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Drain Current ID (A) FS50KM-3 Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) 100 Tc = 25°C VDS = 10V Pulse Test 80 60 40 20 0 0 4 8 12 16 20 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) TC = 25°C 75°C 125°C 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) 104 7 5 3 2 Ciss 103 7 5 3 2 Switching Time (ns) Capacitance C (pF) Coss Crss Tch = 25°C f = 1MHz VGS = 0V 103 7 5 4 3 td(off) 2 tf tr 102 7 5 4 3 td(on) Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω 2 101 0 10 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 100 VGS = 0V Pulse Test Tch = 25°C ID = 50A 16 VDS = 50V 12 80V 100V 8 4 0 0 40 80 120 160 Gate Charge Qg (nC) Aug 07, 2006 page 4 of 6 200 Source Current IS (A) Gate-Source Voltage VGS (V) 2 Drain Current ID (A) 20 Rev.2.00 VDS = 10V Pulse Test Gate-Source Voltage VGS (V) 2 102 7 5 3 2 102 7 5 4 3 Tc = 125°C 80 60 75°C 25°C 40 20 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 VGS = 10V ID = 25A Pulse Test 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 100 150 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 101 7 5 D = 1.0 3 2 0.5 100 7 5 3 2 0.2 0.1 0.05 PDM 0.02 10–1 7 5 3 2 tw T 0.01 Single Pulse D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 50 Channel Temperature Tch (°C) 1.4 0.4 Threshold Voltage vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) 101 7 5 4 3 Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source On-State Resistance rDS(ON) (25°C) On-State Resistance vs. Channel Temperature (Typical) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS50KM-3 Aug 07, 2006 page 5 of 6 tr 90% td(off) tf FS50KM-3 Package Dimensions Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 Unit: mm 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 Standard order code example FS50KM-3 FS50KM-3-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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