APT34F60B
APT34F60S
600V, 36A, 0.19Ω Max trr ≤250ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO
-2
47
D3PAK
APT34F60B
APT34F60S
D
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
36
Continuous Drain Current @ TC = 100°C
23
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
930
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
17
A
1
124
Thermal and Mechanical Characteristics
Min
Characteristic
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
624
RθJC
Junction to Case Thermal Resistance
0.20
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
150
°C
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
300
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
04-2009
TL
Torque
-55
Rev C
TJ,TSTG
°C/W
0.15
050-8074
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
VBR(DSS)
Drain-Source Breakdown Voltage
ΔVBR(DSS)/ΔTJ
Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
ΔVGS(th)/ΔTJ
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Symbol
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
2.5
VDS = 600V
TJ = 25°C
VGS = 0V
TJ = 125°C
Typ
Max
0.57
0.15
4
-10
0.19
5
100
500
±100
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
600
VGS = VDS, ID = 1mA
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Min
VGS = 10V, ID = 17A
3
IDSS
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
APT34F60B_S
Min
Test Conditions
VDS = 50V, ID = 17A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
32
6640
70
610
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
325
VGS = 0V, VDS = 0V to 400V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Current Rise Time
Turn-Off Delay Time
170
165
36
70
37
43
115
34
VGS = 0 to 10V, ID = 17A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 17A
RG = 4.7Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Max
36
A
G
124
S
ISD = 17A, TJ = 25°C, VGS = 0V
1.0
250
525
TJ = 25°C
TJ = 125°C
ISD = 17A 3
TJ = 25°C
diSD/dt = 100A/µs
TJ = 125°C
Unit
TJ = 25°C
TJ = 125°C
ISD ≤ 17A, di/dt ≤1000A/µs, VDD = 400V,
TJ = 125°C
10
25
9
12
V
ns
µC
A
20
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 6.44mH, RG = 25Ω, IAS = 17A.
050-8074
Rev C
04-2009
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -8.03E-8/VDS^2 + 2.80E-8/VDS + 9.89E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT34F60B_S
60
120
V
GS
= 10V
T = 125°C
J
TJ = -55°C
= 7&8V
GS
ID, DRIAN CURRENT (A)
80
TJ = 25°C
60
40
20
40
6V
30
20
5.5V
10
TJ = 150°C
5V
TJ = 125°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
0
Figure 2, Output Characteristics
120
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS = 10V @ 17A
100
2.5
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
2.0
1.5
1.0
80
TJ = -55°C
60
TJ = 25°C
40
TJ = 125°C
20
0.5
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
60
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
10,000
C, CAPACITANCE (pF)
TJ = 25°C
40
TJ = 125°C
30
20
1000
Coss
100
10
Crss
0
16
5
10 15 20 25 30 35
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
100
200
300
400
500
600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 120V
10
VDS = 300V
8
6
VDS = 480V
4
2
0
0
120
ID = 17A
14
0
10
40
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
100
80
TJ = 25°C
60
TJ = 150°C
04-2009
0
VGS, GATE-TO-SOURCE VOLTAGE (V)
Ciss
TJ = -55°C
ISD, REVERSE DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE
50
40
20
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev C
0
050-8074
ID, DRAIN CURRENT (A)
V
50
100
APT34F60B_S
200
200
100
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
IDM
10
13µs
100µs
Rds(on)
1
0.1
1ms
10ms
13µs
Rds(on)
0.1
1ms
10ms
Scaling for Different Case & Junction
Temperatures:
100ms
ID = ID(T = 25°C)*(TJ - TC)/125
C
DC line
DC line
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
100µs
TJ = 150°C
TC = 25°C
1
100ms
TJ = 125°C
TC = 75°C
1
10
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
D = 0.9
0.20
0.15
0.7
Note:
0.5
0.10
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.25
t2
0.3
0.05
t1 = Pulse Duration
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
0
10-5
t1
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
3
D PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
13.79 (.543)
13.99(.551)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
050-8074
Rev C
04-2009
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated