BAR50... Silicon PIN Diodes • Current-controlled RF resistor for switching and attenuating applications • Frequency range above 10 MHz up to 6 GHz • Especially useful as antenna switch in mobile communication • Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF) • Low forward resistance • Very low harmonic distortion • Pb-free (RoHS compliant) package • Qualified according AEC Q1011) BAR50-02L BAR50-02V BAR50-03W Type BAR50-02L* BAR50-02V BAR50-03W 1*BAR50-02L Package TSLP-2-1 SC79 SOD323 Configuration single, leadless single single LS(nH) 0.4 0.6 1.8 Marking AB a blue A is not qualified according AEC Q101 1 2011-07-18 BAR50... Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation Ptot Value Unit mW BAR50-02L, TS ≤ 130°C 250 BAR50-02V, TS ≤ 120°C 250 BAR50-03W, TS ≤ 115°C 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 °C Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit K/W BAR50-02L ≤ 80 BAR50-02V ≤ 120 BAR50-03W ≤ 140 Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR - - 50 nA VF - 0.95 1.1 V DC Characteristics Reverse current VR = 50 V Forward voltage IF = 50 mA 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2011-07-18 BAR50... Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.24 0.5 VR = 5 V, f = 1 MHz - 0.2 0.4 VR = 0 V, f = 100 MHz - 0.2 - VR = 0 V, f = 1...1.8 GHz, BAR50-02L - 0.1 - VR = 0 V, f = 1...1.8 GHz, all other - 0.15 - Reverse parallel resistance kΩ RP VR = 0 V, f = 100 MHz - 25 - VR = 0 V, f = 1 GHz - 6 - VR = 0 V, f = 1.8 GHz - 5 - Forward resistance Ω rf IF = 0.5 mA, f = 100 MHz - 25 40 IF = 1 mA, f = 100 MHz - 16.5 25 IF = 10 mA, f = 100 MHz - 3 4.5 τ rr - 1100 - ns I-region width WI - 56 - µm Insertion loss1) IL Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω dB IF = 3 mA, f = 1.8 GHz - 0.56 - IF = 5 mA, f = 1.8 GHz - 0.4 - IF = 10 mA, f = 1.8 GHz - 0.27 - VR = 0 V, f = 0.9 GHz - 24.5 - VR = 0 V, f = 1.8 GHz - 20 - VR = 0 V, f = 2.45 GHz - 18 - VR = 0 V, f = 5.6 GHz - 12 - Isolation1) 1BAR50-02L ISO in series configuration, Z = 50 Ω 3 2011-07-18 BAR50... Diode capacitance CT = ƒ (VR) Reverse parallel resistance RP = ƒ(VR) f = Parameter f = Parameter 10 3 0.5 KOhm pF 10 2 0.4 0.35 Rp CT 100 MHz 1 GHz 10 1 0.3 1 MHz 100 MHz 1 GHz 1.8 GHz 0.25 1.8 GHz 10 0 0.2 0.15 0.1 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 2 4 6 8 10 12 14 16 VR V 20 VR Forward resistance rf = ƒ (IF) Forward current IF = ƒ (VF) f = 100 MHz TA = Parameter 10 4 10 0 A Ohm 10 -1 10 3 10 2 IF rf 10 -2 10 -3 -40 °C 25 °C 85 °C 125 °C 10 1 10 -4 10 0 10 -1 -2 10 10 -5 10 -1 10 0 10 1 mA 10 10 -6 0 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 2011-07-18 BAR50... Forward current IF = ƒ (TS ) Forward current IF = ƒ (TS ) BAR50-02L BAR50-02V 120 120 mA 100 100 90 90 80 80 IF IF mA 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 90 105 120 C° 75 TS 150 TS Forward current IF = ƒ (TS ) Permissible Pulse Load RthJS = ƒ (tp) BAR50-03W BAR50-02L 10 2 120 mA 100 mA RthJS 90 IF 80 70 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 C° 10 0 -6 10 150 10 -5 10 -4 10 -3 10 -2 °C 10 0 tp TS 5 2011-07-18 BAR50... Permissible Pulse Load Permissible Pulse Load RthJS = ƒ (tp) IFmax/ IFDC = ƒ (t p) BAR50-02V BAR50-02L 10 1 10 3 mA 10 2 RthJS IFmax/ IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 1 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 °C 10 10 -1 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Pulse Load Permissible Pulse Load RthJS = ƒ (tp) IFmax/ IFDC = ƒ (t p) BAR50-03W BAR50-02V 10 3 IFmax /IFDC 10 1 RthjS 10 2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 10 -1 -6 10 1 tp 10 -5 10 -4 10 -3 10 -2 s tp 6 2011-07-18 BAR50... Permissible Pulse Load Insertion loss IL = -|S21|2 = ƒ(f) IFmax/ IFDC = ƒ (t p) IF = Parameter BAR50-03W BAR50-02L in series configuration, Z = 50Ω 1 10 0 IFmax /IFDC dB 100 mA |S21|2 -0.2 0 0.005 0.1 0.2 0.5 1 2 5 10 mA -0.3 5 mA -0.4 -0.5 3 mA -0.6 -0.7 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 -0.8 0 0 tp 1 2 3 4 GHz 6 f Isolation ISO = -|S21 |2 = ƒ(f) VR = Parameter BAR50-02L in series configuration, Z = 50Ω 0 |S21|2 dB -10 -15 -20 0V 1V 10 V -25 -30 0 1 2 3 4 GHz 6 f 7 2011-07-18 Package SC79 8 BAR50... 2011-07-18 BAR50... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 2 0 04 2005 2006 2 0 07 2008 2009 2010 2011 2012 2 0 13 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 9 2011-07-18 Package SOD323 10 BAR50... 2011-07-18 Package TSLP-2-1 11 BAR50... 2011-07-18 BAR50... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 2011-07-18