PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H643 █ APPLICATIONS Low frequency power amplifier █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………500mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO ——Collector-Base Voltage………………………………-40V VCEO——Collector-Emitter Voltage……………………………-20V VE B O ——Emitter-Base Voltage………………………………-5V IC——Collector Current……………………………………-500mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit BVCBO Collector-Base Breakdown Voltage －４０ Ｖ BVCEO Collector-Emitter Breakdown Voltage －２０ Ｖ BVEBO Emitter-Base Breakdown Voltage －５ Ｖ Test Conditions IC=-100μA, IE=0 IC=-10mA, IB=0 ICBO Collector Cut-off Current －２００ ｎＡ IE=-10μA，IC=0 VCB=-25V, IE=0 IEBO Emitter Cut-off Current －２００ ｎＡ VEB=-3V, IC=0 HFE DC Current Gain ４０ ４００ VCE=-1V, IC=-100mA VCE(sat) Collector- Emitter Saturation Voltage －０．３ －０．４ Ｖ IC=-500mA, IB=-50mA VBE(sat) Base-Emitter Saturation Voltage －１．０ －１．３ Ｖ IC=-500mA, IB=-50mA █ hFE Classification R 40— 80 O Y G 70— 140 120— 240 200—400 PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H643