Numonyx NAND02GW3B2CN1E 1-gbit, 2-gbit, 2112-byte/1056-word page, 1.8 v/3 v, nand flash memory Datasheet

NAND01G-B2B
NAND02G-B2C
1-Gbit, 2-Gbit,
2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
Features
■
High density NAND flash memories
– Up to 2 Gbits of memory array
– Cost effective solutions for mass storage
applications
■
NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
TSOP48 12 x 20 mm
FBGA
■
Supply voltage: 1.8 V/3.0 V
■
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
■
Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
■
Page read/program
– Random access: 25 µs (max)
– Sequential access: 30 ns (min)
– Page program time: 200 µs (typ)
■
Copy back program mode
■
Cache program and cache read modes
■
Fast block erase: 2 ms (typ)
■
Status register
■
Electronic signature
■
Chip enable ‘don’t care’
Table 1.
VFBGA63 9.5 x 12 x 1 mm
VFBGA63 9 x 11 x 1 mm
■
Serial number option
■
Data protection
– Hardware block locking
– Hardware program/erase locked during
power transitions
■
Data integrity
– 100 000 program/erase cycles per block
(with ECC)
– 10 years data retention
■
ECOPACK® packages
■
Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
Device summary
Reference
Part number
NAND01GR3B2B, NAND01GW3B2B
NAND01G-B2B
NAND01GR4B2B, NAND01GW4B2B(1)
NAND02GR3B2C, NAND02GW3B2C
NAND02G-B2C
NAND02GR4B2C, NAND02GW4B2C(1)
1. x16 organization only available for MCP products.
April 2008
Rev 5
1/60
www.numonyx.com
1
Contents
NAND01G-B2B, NAND02G-B2C
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.1
3
4
Bad blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Signals description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.1
Inputs/outputs (I/O0-I/O7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.2
Inputs/outputs (I/O8-I/O15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.3
Address Latch Enable (AL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.4
Command Latch Enable (CL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.5
Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.6
Read Enable (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.7
Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.8
Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.9
Ready/Busy (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.10
VDD supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.11
VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.1
Command input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2
Address input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.3
Data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.4
Data output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.5
Write Protect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.6
Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5
Command set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6
Device operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.1
2/60
Read memory array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.1.1
Random read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.1.2
Page read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
NAND01G-B2B, NAND02G-B2C
Contents
6.2
Cache read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.3
Page program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.3.1
Sequential input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.3.2
Random data input in a page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.4
Copy back program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6.5
Cache program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
6.6
Block erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6.7
Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
6.8
Read status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6.9
6.8.1
Write protection bit (SR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6.8.2
P/E/R controller and cache ready/busy bit (SR6) . . . . . . . . . . . . . . . . . 30
6.8.3
P/E/R controller bit (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6.8.4
Cache program error bit (SR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6.8.5
Error bit (SR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
6.8.6
SR4, SR3 and SR2 are reserved . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Read electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
7
Data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
8
Software algorithms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8.1
Bad block management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8.2
NAND flash memory failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8.3
Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
8.4
Wear-leveling algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
8.5
Error correction code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
8.6
Hardware simulation models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
8.6.1
Behavioral simulation models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
8.6.2
IBIS simulations models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
9
Program and erase times and endurance cycles . . . . . . . . . . . . . . . . . 39
10
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
11
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
11.1
Ready/Busy signal electrical characteristics . . . . . . . . . . . . . . . . . . . . . . 52
11.2
Data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
3/60
Contents
NAND01G-B2B, NAND02G-B2C
12
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
13
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
4/60
NAND01G-B2B, NAND02G-B2C
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Valid blocks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Address insertion, x8 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Address insertion, x16 devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Address definitions, x8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Address definitions, x16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Copy back program x8 addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Copy back program x16 addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Status register bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Electronic signature byte 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Electronic signature byte/word 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
NAND flash failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Program, erase times and program erase endurance cycles . . . . . . . . . . . . . . . . . . . . . . . 39
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
DC characteristics, 1.8 V devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
DC characteristics, 3 V devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
AC characteristics for command, address, data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
AC characteristics for operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data. . . . . 55
VFBGA63 9.5 x 12 mm - 6 x 8 ball array, 0.80 mm pitch, package mechanical data. . . . . 56
VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package mechanical data . 57
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
5/60
List of figures
NAND01G-B2B, NAND02G-B2C
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
6/60
Logic block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
TSOP48 connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
VFBGA63 connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Random data output during sequential data output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Cache read operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Page program operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Random data input during sequential data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Copy back program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Page copy back program with random data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Cache program operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Block erase operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Bad block management flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Garbage collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Error detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Equivalent testing circuit for AC characteristics measurement . . . . . . . . . . . . . . . . . . . . . . 42
Command latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Address latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Data Input Latch AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Sequential data output after read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Read status register AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Read electronic signature AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Page read operation AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Page program AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Block erase AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Reset AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Program/erase enable waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Program/erase disable waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Ready/Busy AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Ready/Busy load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Resistor value versus waveform timings for Ready/Busy signal. . . . . . . . . . . . . . . . . . . . . 54
Data protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package outline . . . . . . . . . . . . 55
VFBGA63 9.5 x 12 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline . . . . . . . 56
VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline . . . . . . . . . 57
NAND01G-B2B, NAND02G-B2C
1
Description
Description
NAND01G-B2B and NAND02G-B2C flash 2112-byte/1056-word page is a family of nonvolatile flash memories that uses NAND cell technology. The devices range from 1 Gbit to 2
Gbits and operate with either a 1.8 V or 3 V voltage supply. The size of a page is either 2112
bytes (2048 + 64 spare) or 1056 words (1024 + 32 spare) depending on whether the device
has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 input/output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
Each block can be programmed and erased over 100 000 cycles (with ECC on). To extend
the lifetime of NAND flash devices it is strongly recommended to implement an error
correction code (ECC).
The devices feature a write protect pin that allows performing hardware protection against
program and erase operations.
The devices feature an open-drain ready/busy output that can be used to identify if the
program/erase/read (P/E/R) controller is currently active. The use of an open-drain output
allows the ready/busy pins from several memories to be connected to a single pull-up
resistor.
A Copy Back Program command is available to optimize the management of defective
blocks. When a page program operation fails, the data can be programmed in another page
without having to resend the data to be programmed.
Each device has cache program and cache read features which improve the program and
read throughputs for large files. During cache programming, the device loads the data in a
cache register while the previous data is transferred to the page buffer and programmed into
the memory array. During cache reading, the device loads the data in a cache register while
the previous data is transferred to the I/O buffers to be read.
All devices have the chip enable don’t care feature, which allows code to be directly
downloaded by a microcontroller, as chip enable transitions during the latency time do not
stop the read operation.
All devices have the option of a unique identifier (serial number), which allows each device
to be uniquely identified.
The unique identifier options is subject to an NDA (non disclosure agreement) and so not
described in the datasheet. For more details of this option contact your nearest Numonyx
sales office.
The devices are available in the following packages:
●
TSOP48 (12 x 20 mm)
●
VFBGA63 (9.5 x 12 x 1 mm, 0.8 mm pitch) for NAND02G-B2C devices
●
VFBGA63 (9 x 11 x 1 mm, 0.8 mm pitch) for NAND01G-B2B devices.
For information on how to order these options refer to Table 29: Ordering information
scheme. Devices are shipped from the factory with Block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See Table 2: Product description, for all the devices available in the family.
7/60
Description
Table 2.
NAND01G-B2B, NAND02G-B2C
Product description
Timings
Reference
Part number
Density
Bus
width
Page
size
Block
size
x8
2048
+64
bytes
128K
+4K
bytes
NAND01GR3B2B
NAND01GW3B2B
NAND01G
-B2B
1Gbit
NAND01GR4B2B
x16
NAND01GW4B2B
1024 64K+
+32
2K
words words
Memory
array
64
pages x
1024
blocks
Operating Random Sequential
voltage
access
access
time
time
(max)
(min)
1.7 to
1.95 V
25 µs
50 ns
2.7 to
3.6 V
25 µs
30 ns
Page
Progra
m time
(typ)
Bloc
k
erase
(typ)
VFBGA63
9 x 11 mm
TSOP48
2 ms
1.7 to
1.95 V
25 µs
50 ns
(1)
2.7 to
3.6 V
25 µs
30 ns
(1)
1.7 to
1.95 V
25 µs
50 ns
2.7 to
3.6 V
25 µs
30 ns
1.7 to
1.95 V
25 µs
50 ns
(1)
2.7 to
3.6 V
25 µs
30 ns
(1)
200 µs
NAND02GR3B2C
x8
NAND02G
-B2C
2048
+64
bytes
128K
+4K
bytes
NAND02GW3B2C
2Gbits
NAND02GR4B2C
x16
NAND02GW4B2C
64
pages x
2048
blocks
1024 64K+
+32
2K
words words
Package
VFBGA63
9.5 x 12 m
m
TSOP48
2 ms
1. x16 organization only available for MCP.
Figure 1.
Logic block diagram
AL
CL
W
E
WP
R
Command
interface
logic
P/E/R controller,
high voltage
generator
X decoder
Address
register/counter
NAND flash
memory array
Page buffer
Cache register
Command register
Y decoder
I/O buffers & latches
RB
I/O0-I/O7, x8/x16
I/O8-I/O15, x16
AI12799
8/60
NAND01G-B2B, NAND02G-B2C
Figure 2.
Description
Logic diagram
VDD
I/O8-I/O15, x16
E
R
W
AL
I/O0-I/O7, x8/x16
NAND01G-B2B
NAND02G-B2C
RB
CL
WP
VSS
AI13101
1. x16 organization only available for MCP.
Table 3.
Signal names
Signal
Function
Direction
I/O8-15
Data input/outputs for x16 devices
I/O
I/O0-7
Data input/outputs, address inputs, or command inputs
for x8 and x16 devices
I/O
AL
Address Latch Enable
Input
CL
Command Latch Enable
Input
E
Chip Enable
Input
R
Read Enable
Input
RB
Ready/Busy (open-drain output)
W
Write Enable
Input
WP
Write Protect
Input
VDD
Supply voltage
Supply
VSS
Ground
Supply
NC
Not connected internally
–
DU
Do not use
–
Output
9/60
Description
Figure 3.
NAND01G-B2B, NAND02G-B2C
TSOP48 connections
NC
NC
NC
NC
NC
NC
RB
R
E
NC
NC
VDD
VSS
NC
NC
CL
AL
W
WP
NC
NC
NC
NC
NC
1
48
12 NAND01GW3B2B 37
13 NAND02GW3B2C 36
24
25
NC
NC
NC
NC
I/O7
I/O6
I/O5
I/O4
NC
NC
NC
VDD
VSS
NC
NC
NC
I/O3
I/O2
I/O1
I/O0
NC
NC
NC
NC
AI13102
1. Available only for NAND01GW3B2B and NAND02GW3B2C 8-bit devices.
10/60
NAND01G-B2B, NAND02G-B2C
Figure 4.
Description
VFBGA63 connections (top view through package)
1
2
A
DU
DU
B
DU
3
4
5
6
7
8
C
WP
AL
VSS
E
W
RB
D
NC
R
CL
NC
NC
NC
E
NC
NC
NC
NC
NC
NC
F
NC
NC
NC
NC
NC
NC
G
NC
NC
NC
NC
NC
NC
H
NC
I/O0
NC
NC
NC
VDD
J
NC
I/O1
NC
VDD
I/O5
I/O7
K
VSS
I/O2
I/O3
I/O4
I/O6
VSS
9
10
DU
DU
DU
DU
L
DU
DU
DU
DU
M
DU
DU
DU
DU
AI13103
1. Available only for NAND01GR3B2B and NAND02GR3B2C 8-bit devices.
11/60
Memory array organization
2
NAND01G-B2B, NAND02G-B2C
Memory array organization
The memory array is made up of NAND structures where 32 cells are connected in series.
The memory array is organized in blocks where each block contains 64 pages. The array is
split into two areas, the main area and the spare area. The main area of the array is used to
store data whereas the spare area is typically used to store error correction codes, software
flags or bad block identification.
In x8 devices the pages are split into a 2048-byte main area and a spare area of 64 bytes. In
the x16 devices the pages are split into a 1,024-word main area and a 32-word spare area.
Refer to Figure 5: Memory array organization.
2.1
Bad blocks
The NAND flash 2112-byte/1056-word page devices may contain bad blocks, that is blocks
that contain one or more invalid bits whose reliability is not guaranteed. Additional bad
blocks may develop during the lifetime of the device.
The bad block Information is written prior to shipping (refer to Section 8.1: Bad block
management for more details).
Table 4: Valid blocks shows the minimum number of valid blocks in each device. The values
shown include both the bad blocks that are present when the device is shipped and the bad
blocks that could develop later on.
These blocks need to be managed using bad blocks management, block replacement or
error correction codes (refer to Section 8: Software algorithms).
Table 4.
12/60
Valid blocks
Density of device
Min
Max
2 Gbits
2008
2048
1 Gbit
1004
1024
NAND01G-B2B, NAND02G-B2C
Figure 5.
Memory array organization
Memory array organization
x8 DEVICES
x16 DEVICES
Block = 64 pages
Page = 2112 bytes (2,048 + 64)
Block = 64 pages
Page = 1056 words (1024 + 32)
a
re
a
Sp
a
are
re
a
Sp
are
Main area
Main area
Block
Page
Block
Page
16 bits
8 bits
2048 bytes
1024 words
64
bytes
Page buffer, 1056 words
Page buffer, 2112 bytes
2,048 bytes
64
bytes
32
words
8 bits
1,024 words
32
words
16 bits
AI09854
13/60
Signals description
3
NAND01G-B2B, NAND02G-B2C
Signals description
See Figure 2: Logic diagram, and Table 3: Signal names, for a brief overview of the signals
connected to this device.
3.1
Inputs/outputs (I/O0-I/O7)
Input/outputs 0 to 7 are used to input the selected address, output the data during a read
operation or input a command or data during a write operation. The inputs are latched on
the rising edge of Write Enable. I/O0-I/O7 are left floating when the device is deselected or
the outputs are disabled.
3.2
Inputs/outputs (I/O8-I/O15)
Input/outputs 8 to 15 are only available in x16 devices. They are used to output the data
during a read operation or input data during a write operation. Command and address
Inputs only require I/O0 to I/O7.
The inputs are latched on the rising edge of Write Enable. I/O8-I/O15 are left floating when
the device is deselected or the outputs are disabled.
3.3
Address Latch Enable (AL)
The Address Latch Enable activates the latching of the address inputs in the command
interface. When AL is High, the inputs are latched on the rising edge of Write Enable.
3.4
Command Latch Enable (CL)
The Command Latch Enable activates the latching of the command inputs in the command
interface. When CL is High, the inputs are latched on the rising edge of Write Enable.
3.5
Chip Enable (E)
The Chip Enable input activates the memory control logic, input buffers, decoders and
sense amplifiers. When Chip Enable is Low, VIL, the device is selected. If Chip Enable goes
High, vIH, while the device is busy, the device remains selected and does not go into standby
mode.
3.6
Read Enable (R)
The Read Enable pin, R, controls the sequential data output during read operations. Data is
valid tRLQV after the falling edge of R. The falling edge of R also increments the internal
column address counter by one.
14/60
NAND01G-B2B, NAND02G-B2C
3.7
Signals description
Write Enable (W)
The Write Enable input, W, controls writing to the command interface, input address and
data latches. Both addresses and data are latched on the rising edge of Write Enable.
During power-up and power-down a recovery time of 10 µs (min) is required before the
command interface is ready to accept a command. It is recommended to keep Write Enable
High during the recovery time.
3.8
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program
or erase operations. When Write Protect is Low, VIL, the device does not accept any
program or erase operations.
It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down.
3.9
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R
controller is currently active. When Ready/Busy is Low, VOL, a read, program or erase
operation is in progress. When the operation completes Ready/Busy goes High, VOH.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
Refer to the Section 11.1: Ready/Busy signal electrical characteristics for details on how to
calculate the value of the pull-up resistor.
During power-up and power-down a minimum recovery time of 10 µs is required before the
command interface is ready to accept a command. During this period the RB signal is Low,
VOL.
3.10
VDD supply voltage
VDD provides the power supply to the internal core of the memory device. It is the main
power supply for all operations (read, program and erase).
An internal voltage detector disables all functions whenever VDD is below VLKO (see
Table 22 and Table 23) to protect the device from any involuntary program/erase during
power-transitions.
Each device in a system should have VDD decoupled with a 0.1 µF capacitor. The PCB track
widths should be sufficient to carry the required program and erase currents.
3.11
VSS ground
Ground, VSS, is the reference for the power supply. It must be connected to the system
ground.
15/60
Bus operations
4
NAND01G-B2B, NAND02G-B2C
Bus operations
There are six standard bus operations that control the memory. Each of these is described
in this section, see Table 5: Bus operations, for a summary.
Typically, glitches of less than 5 ns on Chip Enable, Write Enable and Read Enable are
ignored by the memory and do not affect bus operations.
4.1
Command input
Command input bus operations are used to give commands to the memory. Commands are
accepted when Chip Enable is Low, Command Latch Enable is High, Address Latch Enable
is Low and Read Enable is High. They are latched on the rising edge of the Write Enable
signal.
Only I/O0 to I/O7 are used to input commands.
See Figure 19 and Table 24 for details of the timings requirements.
4.2
Address input
Address input bus operations are used to input the memory addresses. Four bus cycles are
required to input the addresses for 1-Gbit devices whereas five bus cycles are required for
the 2-Gbit device (refer to Table 6 and Table 7, Address insertion).
The addresses are accepted when Chip Enable is Low, Address Latch Enable is High,
Command Latch Enable is Low and Read Enable is High. They are latched on the rising
edge of the Write Enable signal. Only I/O0 to I/O7 are used to input addresses.
See Figure 20 and Table 24 for details of the timings requirements.
4.3
Data input
Data input bus operations are used to input the data to be programmed.
Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command
Latch Enable is Low and Read Enable is High. The data is latched on the rising edge of the
Write Enable signal. The data is input sequentially using the Write Enable signal.
See Figure 21 and Table 24 and Table 25 for details of the timings requirements.
4.4
Data output
Data output bus operations are used to read: the data in the memory array, the status
register, the lock status, the electronic signature and the unique identifier.
Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low,
and Command Latch Enable is Low. The data is output sequentially using the Read Enable
signal.
See Figure 22 and Table 25 for details of the timings requirements.
16/60
NAND01G-B2B, NAND02G-B2C
4.5
Bus operations
Write Protect
Write Protect bus operations are used to protect the memory against program or erase
operations. When the Write Protect signal is Low the device will not accept program or erase
operations and so the contents of the memory array cannot be altered. The Write Protect
signal is not latched by Write Enable to ensure protection even during power-up.
4.6
Standby
When Chip Enable is High the memory enters standby mode, the device is deselected,
outputs are disabled and power consumption is reduced.
Table 5.
Bus operations
Bus operation
E
AL
CL
R
W
WP
I/O0 - I/O7
I/O8 - I/O15(1)
Command input
VIL
VIL
VIH
VIH
Rising
X(2)
Command
X
Address input
VIL
VIH
VIL
VIH
Rising
X
Address
X
Data input
VIL
VIL
VIL
VIH
Rising
VIH
Data input
Data input
Data output
VIL
VIL
VIL
Falling
VIH
X
Data output
Data output
Write Protect
X
X
X
X
X
VIL
X
X
Standby
VIH
X
X
X
X
VIL/VD
X
X
D
1. Only for x16 devices.
2. WP must be VIH when issuing a program or erase command.
Table 6.
Bus
cycle(1)
Address insertion, x8 devices
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
A7
A6
A5
A4
A3
A2
A1
A0
2nd
VIL
VIL
VIL
VIL
A11
A10
A9
A8
3rd
A19
A18
A17
A16
A15
A14
A13
A12
4th
A27
A26
A25
A24
A23
A22
A21
A20
th(2)
VIL
VIL
VIL
VIL
VIL
VIL
VIL
A28
5
1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2-Gbit devices. A28 is for 2-Gbit devices only.
17/60
Bus operations
NAND01G-B2B, NAND02G-B2C
Table 7.
Address insertion, x16 devices
I/O8-
Bus
cycle(1)
I/O15
1st
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
X
A7
A6
A5
A4
A3
A2
A1
A0
2nd
X
VIL
VIL
VIL
VIL
VIL
A10
A9
A8
rd
X
A18
A17
A16
A15
A14
A13
A12
A11
th
X
A26
A25
A24
A23
A22
A21
A20
A19
th(2)
X
VIL
VIL
VIL
VIL
VIL
VIL
VIL
A27
3
4
5
1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2-Gbit devices. A27 is for 2-Gbit devices only.
Table 8.
Table 9.
18/60
Address definitions, x8
Address
Definition
A0 - A11
Column address
A12 - A17
Page address
A18 - A27
Block address
1-Gbit device
A18 - A28
Block address
2-Gbit device
Address definitions, x16
Address
Definition
A0 - A10
Column address
A11 - A16
Page address
A17 - A26
Block address
1-Gbit device
A17 - A27
Block address
2-Gbit device
NAND01G-B2B, NAND02G-B2C
5
Command set
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is High. Device operations are selected by writing
specific commands to the command register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The commands are summarized in Table 10: Commands.
Table 10.
Commands
Bus write operations(1)
Command
1st cycle
2nd cycle
3rd cycle
4th cycle
Read
00h
30h
–
–
Random Data Output
05h
E0h
–
–
Cache Read
00h
31h
–
–
Exit Cache Read
34h
–
–
–
Page Program
(Sequential Input default)
80h
10h
–
–
Random Data Input
85h
–
–
–
Copy Back Program
00h
35h
85h
10h
Cache Program
80h
15h
–
–
Block Erase
60h
D0h
–
–
Reset
FFh
–
–
–
Read Electronic Signature
90h
–
–
–
Read Status Register
70h
–
–
–
Commands
accepted
during
busy
Yes(2)
Yes
Yes
1. The bus cycles are only shown for issuing the codes. The cycles required to input the
addresses or input/output data are not shown.
2. Only during Cache Read busy.
19/60
Device operations
6
NAND01G-B2B, NAND02G-B2C
Device operations
The following section gives the details of the device operations.
6.1
Read memory array
At power-up the device defaults to read mode. To enter read mode from another mode the
Read command must be issued, see Table 10: Commands.
Once a Read command is issued two types of operations are available: random read and
page read.
6.1.1
Random read
Each time the Read command is issued the first read is random read.
6.1.2
Page read
After the first random read access, the page data (2112 bytes or 1056 words) is transferred
to the page buffer in a time of tWHBH (refer to Table 25 for value). Once the transfer is
complete the Ready/Busy signal goes High. The data can then be read out sequentially
(from selected column address to last column address) by pulsing the Read Enable signal.
The device can output random data in a page, instead of the consecutive sequential data, by
issuing a Random Data Output command.
The Random Data Output command can be used to skip some data during a sequential
data output.
The sequential operation can be resumed by changing the column address of the next data
to be output, to the address which follows the Random Data Output command.
The Random Data Output command can be issued as many times as required within a
page.
The Random Data Output command is not accepted during cache read operations.
20/60
NAND01G-B2B, NAND02G-B2C
Figure 6.
Device operations
Read operations
CL
E
W
AL
R
tBLBH1
RB
I/O
00h
Address input
Command
code
30h
Command
code
Data output (sequentially)
Busy
ai08657b
1. Highest address depends on device density.
21/60
Device operations
Figure 7.
NAND01G-B2B, NAND02G-B2C
Random data output during sequential data output
tBLBH1
(Read Busy time)
RB
Busy
R
I/O
00h
Address
inputs
Cmd
code
30h
Data output
Cmd
code
05h
Address
inputs
Cmd
code
5 Add cycles
Row Add 1,2,3 Col Add 1,2
E0h
Data output
Cmd
code
2Add cycles
Col Add 1,2
Main area
Spare
area
Main area
Spare
area
ai08658
22/60
NAND01G-B2B, NAND02G-B2C
6.2
Device operations
Cache read
The cache read operation is used to improve the read throughput by reading data using the
cache register. As soon as the user starts to read one page, the device automatically loads
the next page into the cache register.
A cache read operation consists of three steps (see Table 10: Commands):
1.
One bus cycle is required to setup the Cache Read command (the same as the
standard Read command)
2.
Four or five (refer to Table 6 and Table 7) bus cycles are then required to input the start
address
3.
One bus cycle is required to issue the Cache Read Confirm command to start the
P/E/R controller.
The start address must be at the beginning of a page (column address = 00h, see Table 8
and Table 9). This allows the data to be output uninterrupted after the latency time (tBLBH1),
see Figure 8.
The Ready/Busy signal can be used to monitor the start of the operation. During the latency
period the Ready/Busy signal goes Low, after this the Ready/Busy signal goes High, even if
the device is internally downloading page n+1.
Once the cache read operation has started, the status register can be read using the Read
Status Register command.
During the operation, SR5 can be read, to find out whether the internal reading is ongoing
(SR5 = ‘0’), or has completed (SR5 = ‘1’), while SR6 indicates whether the cache register is
ready to download new data.
To exit the cache read operation an Exit Cache Read command must be issued (see
Table 10).
If the Exit Cache Read command is issued while the device is internally reading page n+1,
pages n and n+1 will not be output.
Figure 8.
Cache read operation
tBLBH4
tBLBH1
(Read Busy time)
RB
R
Busy
I/O
00h
Read
Setup
code
Address
inputs
31h
Cache
Read
Confirm
code
1st page
2nd page
3rd page
last page
Block N
Data output
34h
Exit
Cache
Read
code
ai13104b
23/60
Device operations
6.3
NAND01G-B2B, NAND02G-B2C
Page program
The page program operation is the standard operation to program data to the memory array.
Generally, the page is programmed sequentially, however the device does support random
input within a page. It is recommended to address pages sequentially within a given block.
The memory array is programmed by page, however partial page programming is allowed
where any number of bytes (1 to 2112) or words (1 to 1056) can be programmed.
The maximum number of consecutive partial page program operations allowed in the same
page is four. After exceeding this a Block Erase command must be issued before any further
program operations can take place in that page.
6.3.1
Sequential input
To input data sequentially the addresses must be sequential and remain in one block.
For sequential input each page program operation consists of five steps (see Figure 9):
6.3.2
1.
one bus cycle is required to setup the Page Program (sequential input) command (see
Table 10)
2.
four or five bus cycles are then required to input the program address (refer to Table 6
and Table 7)
3.
the data is then loaded into the data registers
4.
one bus cycle is required to issue the Page Program Confirm command to start the
P/E/R controller. The P/E/R will only start if the data has been loaded in step 3
5.
the P/E/R controller then programs the data into the array.
Random data input in a page
During a sequential input operation, the next sequential address to be programmed can be
replaced by a random address, by issuing a Random Data Input command. The following
two steps are required to issue the command:
1.
one bus cycle is required to setup the Random Data Input command (see Table 10)
2.
two bus cycles are then required to input the new column address (refer to Table 6).
Random Data Input can be repeated as often as required in any given page.
Once the program operation has started the status register can be read using the Read
Status Register command. During program operations the status register will only flag errors
for bits set to '1' that have not been successfully programmed to '0'.
During the program operation, only the Read Status Register and Reset commands will be
accepted, all other commands will be ignored.
Once the program operation has completed the P/E/R controller bit SR6 is set to ‘1’ and the
Ready/Busy signal goes High.
The device remains in read status register mode until another valid command is written to
the command interface.
24/60
NAND01G-B2B, NAND02G-B2C
Figure 9.
Device operations
Page program operation
tBLBH2
(Program Busy time)
RB
Busy
I/O
80h
Address Inputs
Data Input
10h
70h
Confirm
Code
Page Program
Setup Code
SR0
Read Status Register
ai08659
Figure 10. Random data input during sequential data input
tBLBH2
(Program Busy time)
RB
Busy
I/O
80h
Address
Inputs
Data Intput
85h
Cmd
Code
Cmd
Code
5 Add cycles
Row Add 1,2,3 Col Add 1,2
Main area
Spare
area
Address
Inputs
2 Add cycles
Col Add 1,2
Data Input
10h
Confirm
Code
Main area
70h
SR0
Read Status Register
Spare
area
ai08664
25/60
Device operations
6.4
NAND01G-B2B, NAND02G-B2C
Copy back program
The copy back program operation is used to copy the data stored in one page and
reprogram it in another page.
The copy back program operation does not require external memory and so the operation is
faster and more efficient because the reading and loading cycles are not required. The
operation is particularly useful when a portion of a block is updated and the rest of the block
needs to be copied to the newly assigned block.
If the copy back program operation fails an error is signalled in the status register. However
as the standard external ECC cannot be used with the copy back program operation bit error
due to charge loss cannot be detected. For this reason it is recommended to limit the
number of copy back program operations on the same data and or to improve the
performance of the ECC.
The copy back program operation requires four steps:
1.
The first step reads the source page. The operation copies all 1056 words/ 2112 bytes
from the page into the data buffer. It requires:
–
one bus write cycle to setup the command
–
4 or 5 bus write cycles to input the source page address (see Table 6 and Table 7)
–
one bus write cycle to issue the confirm command code
2.
When the device returns to the ready state (Ready/Busy High), the next bus write cycle
of the command is given with the 4 or 5 bus cycles to input the target page address
(see Table 6 and Table 7). Refer to Table 11 for the addresses that must be the same
for the source and target pages
3.
Then the confirm command is issued to start the P/E/R controller.
To see the data input cycle for modifying the source page and an example of the copy back
program operation refer to Figure 11.
A data input cycle to modify a portion or a multiple distant portion of the source page, is
shown in Figure 12.
Table 11.
Copy back program x8 addresses
Density
1 Gbit
no constraint
2 Gbits
A28
Table 12.
Copy back program x16 addresses
Density
26/60
Same address for source and target pages
Same address for source and target pages
1 Gbit
no constraint
2 Gbits
A27
NAND01G-B2B, NAND02G-B2C
Device operations
Figure 11. Copy back program
I/O
00h
Source
Add Inputs
35h
85h
Read
Code
Target
Add Inputs
10h
70h
Copy Back
Code
SR0
Read Status Register
tBLBH1
tBLBH2
(Read Busy time)
(Program Busy time)
RB
Busy
Busy
ai09858b
Figure 12. Page copy back program with random data input
I/O
00h
Source
Add Inputs 35h
Read
Code
85h
Copy Back
Code
tBLBH1
Target
Add Inputs
Data
85h
2 Cycle
Add Inputs
Data
10h
70h
SR0
Unlimited number of repetitions
tBLBH2
(Read Busy time)
(Program Busy time)
RB
Busy
Busy
ai11001
27/60
Device operations
6.5
NAND01G-B2B, NAND02G-B2C
Cache program
The cache program operation is used to improve the programming throughput by
programming data using the cache register. The cache program operation can only be used
within one block. The cache register allows new data to be input while the previous data that
was transferred to the page buffer is programmed into the memory array.
The following sequence is required to issue a cache program operation (refer to Figure 13):
1.
First of all the program setup command is issued: one bus cycle to issue the program
setup command then 4 or 5 bus write cycles to input the address (see Table 6 and
Table 7). The data is then input (up to 2112 bytes/1056 words) and loaded into the
cache register
2.
One bus cycle is required to issue the confirm command to start the P/E/R controller
3.
The P/E/R controller then transfers the data to the page buffer. During this the device is
busy for a time of tBLBH5
4.
Once the data is loaded into the page buffer the P/E/R controller programs the data into
the memory array. As soon as the cache registers are empty (after tBLBH5) a new
Cache Program command can be issued, while the internal programming is still
executing.
Once the program operation has started the status register can be read using the Read
Status Register command. During cache program operations SR5 can be read to find out
whether the internal programming is ongoing (SR5 = ‘0’) or has completed (SR5 = ‘1’) while
SR6 indicates whether the cache register is ready to accept new data. If any errors have
been detected on the previous page (Page N-1), the cache program error bit SR1 will be set
to ‘1', while if the error has been detected on page N the error bit SR0 will be set to '1’.
When the next page (Page N) of data is input with the Cache Program command, tBLBH5 is
affected by the pending internal programming. The data will only be transferred from the
cache register to the page buffer when the pending program cycle is finished and the page
buffer is available.
If the system monitors the progress of the operation using only the Ready/Busy signal, the
last page of data must be programmed with the Page Program Confirm command (10h).
If the Cache Program Confirm command (15h) is used instead, status register bit SR5 must
be polled to find out if the last programming is finished before starting any other operations.
Figure 13. Cache program operation
tBLBH5
tBLBH5
(Cache Busy time)
tCACHEPG
RB
Busy
I/O
80h
Address
Inputs
Data
Inputs
Page
Program
Code
First Page
Busy
Busy
15h
80h
Cache
Program
Code
Page
Program
Code
Address
Inputs
Data
Inputs
15h
80h
Address
Inputs
Data
Inputs
Cache Program
Confirm Code
Second Page
10h
70h SR0
Read Status
Page
Register
Program
Confirm Code
Last Page
(can be repeated up to 63 times)
ai08672
1. Up to 64 pages can be programmed in one cache program operation.
2. tCACHEPG is the program time for the last page + the program time for the (last − 1)th page − (Program command cycle time
+ Last page data loading time).
28/60
NAND01G-B2B, NAND02G-B2C
6.6
Device operations
Block erase
Erase operations are done one block at a time. An erase operation sets all of the bits in the
addressed block to ‘1’. All previous data in the block is lost.
An erase operation consists of three steps (refer to Figure 14):
1.
One bus cycle is required to setup the Block Erase command. Only addresses A18A28 (x8) or A17-A27 (x16) are used, the other address inputs are ignored
2.
Two or three bus cycles are then required to load the address of the block to be erased.
Refer to Table 8 and Table 9 for the block addresses of each device
3.
One bus cycle is required to issue the Block Erase Confirm command to start the P/E/R
controller.
The operation is initiated on the rising edge of write Enable, W, after the Confirm command
is issued. The P/E/R controller handles block erase and implements the verify process.
During the block erase operation, only the Read Status Register and Reset commands will
be accepted, all other commands will be ignored.
Once the program operation has completed the P/E/R controller bit SR6 is set to ‘1’ and the
Ready/Busy signal goes High. If the operation completed successfully, the write status bit
SR0 is ‘0’, otherwise it is set to ‘1’.
Figure 14. Block erase operation
tBLBH3
(Erase Busy time)
RB
Busy
I/O
60h
Block Erase
Setup Code
Block Address
Inputs
D0h
Confirm
Code
70h
SR0
Read Status Register
ai07593
6.7
Reset
The Reset command is used to reset the command interface and status register. If the
Reset command is issued during any operation, the operation will be aborted. If it was a
program or erase operation that was aborted, the contents of the memory locations being
modified will no longer be valid as the data will be partially programmed or erased.
If the device has already been reset then the new Reset command will not be accepted.
The Ready/Busy signal goes Low for tBLBH4 after the Reset command is issued. The value
of tBLBH4 depends on the operation that the device was performing when the command was
issued, refer to Table 25: AC characteristics for operations for the values.
29/60
Device operations
6.8
NAND01G-B2B, NAND02G-B2C
Read status register
The device contains a status register which provides information on the current or previous
program or erase operation. The various bits in the status register convey information and
errors on the operation.
The status register is read by issuing the Read Status Register command. The status
register information is present on the output data bus (I/O0-I/O7) on the falling edge of Chip
Enable or Read Enable, whichever occurs last. When several memories are connected in a
system, the use of Chip Enable and Read Enable signals allows the system to poll each
device separately, even when the Ready/Busy pins are common-wired. It is not necessary to
toggle the Chip Enable or Read Enable signals to update the contents of the status register.
After the Read Status Register command has been issued, the device remains in read
status register mode until another command is issued. Therefore if a Read Status Register
command is issued during a random read cycle a new Read command must be issued to
continue with a page read operation.
The Status Register bits are summarized in Table 13: Status register bits,. Refer to Table 13
in conjunction with the following text descriptions.
6.8.1
Write protection bit (SR7)
The write protection bit can be used to identify if the device is protected or not. If the write
protection bit is set to ‘1’ the device is not protected and program or erase operations are
allowed. If the write protection bit is set to ‘0’ the device is protected and program or erase
operations are not allowed.
6.8.2
P/E/R controller and cache ready/busy bit (SR6)
Status register bit SR6 has two different functions depending on the current operation.
During cache program operations SR6 acts as a cache program ready/busy bit, which
indicates whether the cache register is ready to accept new data. When SR6 is set to '0', the
cache register is busy and when SR6 is set to '1', the cache register is ready to accept new
data.
During all other operations SR6 acts as a P/E/R controller bit, which indicates whether the
P/E/R controller is active or inactive. When the P/E/R controller bit is set to ‘0’, the P/E/R
controller is active (device is busy); when the bit is set to ‘1’, the P/E/R controller is inactive
(device is ready).
6.8.3
P/E/R controller bit (SR5)
The program/erase/read controller bit indicates whether the P/E/R controller is active or
inactive. When the P/E/R controller bit is set to ‘0’, the P/E/R controller is active (device is
busy); when the bit is set to ‘1’, the P/E/R controller is inactive (device is ready).
30/60
NAND01G-B2B, NAND02G-B2C
6.8.4
Device operations
Cache program error bit (SR1)
The cache program error bit can be used to identify if the previous page (page N-1) has been
successfully programmed or not in a cache program operation. SR1 is set to ’1’ when the
cache program operation has failed to program the previous page (page N-1) correctly. If
SR1 is set to ‘0’ the operation has completed successfully.
The cache program error bit is only valid during cache program operations, during other
operations it is don’t care.
6.8.5
Error bit (SR0)
The error bit is used to identify if any errors have been detected by the P/E/R controller. The
error bit is set to ’1’ when a program or erase operation has failed to write the correct data to
the memory. If the error bit is set to ‘0’ the operation has completed successfully. The error
bit SR0, in a cache program operation, indicates a failure on page N.
6.8.6
SR4, SR3 and SR2 are reserved
Table 13.
Status register bits
Bit
Name
SR7
Write protection
Logic level
Definition
'1'
Not protected
'0'
Protected
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
'1'
Cache register ready (cache operation only)
'0'
Cache register busy (cache operation only)
Program/ erase/ read
controller(1)
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
SR4, SR3, SR2
Reserved
Don’t care
SR1
Cache program error(2)
Program/ erase/ read
controller
SR6
Cache ready/busy
SR5
'1'
Page N-1 failed in cache program operation
'0'
Page N-1 programmed successfully
‘1’
Error – operation failed
‘0’
No Error – operation successful
‘1’
Page N failed in cache program operation
‘0’
Page N programmed successfully
Generic error
SR0
Cache program error
1. Only valid for cache program operations, for other operations it is same as SR6.
2. Only valid for cache operations, for other operations it is don’t care.
31/60
Device operations
6.9
NAND01G-B2B, NAND02G-B2C
Read electronic signature
The device contains a manufacturer code and device code. To read these codes three steps
are required:
1.
One bus write cycle to issue the Read Electronic Signature command (90h)
2.
One bus write cycle to input the address (00h)
3.
Four bus read cycles to sequentially output the data (as shown in Table 14: Electronic
signature).
Table 14.
Electronic signature
byte/word 1
Part number
Manufacturer
code
byte/word 2
Device code
NAND01GR3B2B
byte/word 3
byte/word 4
(see Table 15)
(see Table 16)
A1h
15h
F1h
1Dh
B1h
55h
20h
NAND01GW3B2B
NAND01GR4B2B
0020h
NAND01GW4B2B
C1h
5Dh
80h
NAND02GR3B2C
AAh
15h
DAh
1Dh
BAh
55h
CAh
5Dh
20h
NAND02GW3B2C
NAND02GR4B2C
0020h
NAND02GW42C
Table 15.
Electronic signature byte 3
I/O
Definition
Value
Description
Internal chip number
00
01
10
11
1
2
4
8
I/O3-I/O2
Cell type
00
01
10
11
2-level cell
4-level cell
8-level cell
16-level cell
I/O5-I/O4
Number of simultaneously
programmed pages
00
01
10
11
1
2
4
8
I/O6
Interleaved programming
between multiple devices
0
1
Not supported
supported
I/O7
Cache program
0
1
Not supported
supported
I/O1-I/O0
32/60
NAND01G-B2B, NAND02G-B2C
Table 16.
Device operations
Electronic signature byte/word 4
I/O
Definition
Value
Description
I/O1-I/O0
Page size
(without spare area)
00
01
10
11
1 Kbyte
2 Kbytes
Reserved
Reserved
I/O2
Spare area size
(byte / 512-byte)
0
1
8
16
Minimum sequential
access time
00
01
10
11
50 ns
30 ns
25 ns
Reserved
I/O5-I/O4
Block size
(without spare area)
00
01
10
11
64 Kbytes
128 Kbytes
256 Kbytes
Reserved
I/O6
Organization
0
1
X8
X16
I/O7, I/O3
33/60
Data protection
7
NAND01G-B2B, NAND02G-B2C
Data protection
The device has hardware features to protect against program and erase operations.
It features a Write Protect, WP, pin, which can be used to protect the device against program
and erase operations. It is recommended to keep WP at VIL during power-up and powerdown.
In addition, to protect the memory from any involuntary program/erase operations during
power-transitions, the device has an internal voltage detector which disables all functions
whenever VDD is below VLKO (see Table 22 and Table 23).
34/60
NAND01G-B2B, NAND02G-B2C
8
Software algorithms
Software algorithms
This section gives information on the software algorithms that Numonyx recommends to
implement to manage the bad blocks and extend the lifetime of the NAND device.
NAND flash memories are programmed and erased by Fowler-Nordheim tunneling using a
high voltage. Exposing the device to a high voltage for extended periods can cause the
oxide layer to be damaged. For this reason, the number of program and erase cycles is
limited (see Table 18 for value) and it is recommended to implement garbage collection, a
wear-leveling algorithm and an error correction code, to extend the number of program and
erase cycles and increase the data retention.
To help integrate a NAND memory into an application, Numonyx can provide a file system
OS native reference software, which supports the basic commands of file management.
Contact the nearest Numonyx sales office for more details.
8.1
Bad block management
Devices with bad blocks have the same quality level and the same AC and DC
characteristics as devices where all the blocks are valid. A bad block does not affect the
performance of valid blocks because it is isolated from the bit line and common source line
by a select transistor.
The devices are supplied with all the locations inside valid blocks erased (FFh). The bad
block information is written prior to shipping. Any block, where the 1st and 6th bytes, or 1st
word, in the spare area of the 1st page, does not contain FFh, is a bad block.
The bad block Information must be read before any erase is attempted as the bad block
information may be erased. For the system to be able to recognize the bad blocks based on
the original information it is recommended to create a bad block table following the flowchart
shown in Figure 15.
8.2
NAND flash memory failure modes
Over the lifetime of the device additional bad blocks may develop.
To implement a highly reliable system, all the possible failure modes must be considered:
●
Program/erase failure: in this case the block has to be replaced by copying the data to
a valid block. These additional bad blocks can be identified as attempts to program or
erase them will give errors in the status register
As the failure of a page program operation does not affect the data in other pages in the
same block, the block can be replaced by re-programming the current data and copying
the rest of the replaced block to an available valid block. The Copy Back Program
command can be used to copy the data to a valid block. See Section 6.4: Copy back
program for more details
●
Read failure: in this case, ECC correction must be implemented. To efficiently use the
memory space, it is recommended to recover single-bit error in read by ECC, without
replacing the whole block.
Refer to Table 17 for the procedure to follow if an error occurs during an operation.
35/60
Software algorithms
Table 17.
NAND01G-B2B, NAND02G-B2C
NAND flash failure modes
Operation
Procedure
Erase
Block replacement
Program
Block replacement or ECC
Read
ECC
Figure 15. Bad block management flowchart
START
Block Address =
Block 0
Data
= FFh?
Increment
Block Address
NO
Update
Bad Block table
YES
Last
block?
NO
YES
END
AI07588C
Figure 16. Garbage collection
New area (after GC)
Old area
Valid
page
Invalid
page
Free
page
(erased)
AI07599B
36/60
NAND01G-B2B, NAND02G-B2C
8.3
Software algorithms
Garbage collection
When a data page needs to be modified, it is faster to write to the first available page, and
the previous page is marked as invalid. After several updates it is necessary to remove
invalid pages to free some memory space.
To free this memory space and allow further program operations it is recommended to
implement a garbage collection algorithm. In a garbage collection software the valid pages
are copied into a free area and the block containing the invalid pages is erased (see
Figure 16).
8.4
Wear-leveling algorithm
For write-intensive applications, it is recommended to implement a wear-leveling algorithm
to monitor and spread the number of write cycles per block.
In memories that do not use a wear-leveling algorithm not all blocks get used at the same
rate. Blocks with long-lived data do not endure as many write cycles as the blocks with
frequently-changed data.
The wear-leveling algorithm ensures that equal use is made of all the available write cycles
for each block. There are two wear-leveling levels:
●
First level wear-leveling, new data is programmed to the free blocks that have had the
fewest write cycles
●
Second level wear-leveling, long-lived data is copied to another block so that the
original block can be used for more frequently-changed data.
The second level wear-leveling is triggered when the difference between the maximum and
the minimum number of write cycles per block reaches a specific threshold.
8.5
Error correction code
An error correction code (ECC) can be implemented in the NAND flash memories to identify
and correct errors in the data.
For every 2048 bits in the device it is recommended to implement 22 bits of ECC (16 bits for
line parity plus 6 bits for column parity).
An ECC model is available in VHDL or Verilog. Contact the nearest Numonyx sales office for
more details.
37/60
Software algorithms
NAND01G-B2B, NAND02G-B2C
Figure 17. Error detection
New ECC generated
during read
XOR previous ECC
with new ECC
All results
= zero?
NO
YES
>1 bit
= zero?
NO
YES
22 bit data = 0
11 bit data = 1
1 bit data = 1
No Error
Correctable
Error
ECC Error
ai08332
8.6
Hardware simulation models
8.6.1
Behavioral simulation models
Denali Software Corporation models are platform independent functional models designed
to assist customers in performing entire system simulations (typical VHDL/Verilog). These
models describe the logic behavior and timings of NAND flash devices, and so allow
software to be developed before hardware.
8.6.2
IBIS simulations models
IBIS (I/O buffer information specification) models describe the behavior of the I/O buffers
and electrical characteristics of flash devices.
These models provide information such as AC characteristics, rise/fall times and package
mechanical data, all of which are measured or simulated at voltage and temperature ranges
wider than those allowed by target specifications.
IBIS models are used to simulate PCB connections and can be used to resolve compatibility
issues when upgrading devices. They can be imported into SPICETOOLS.
38/60
NAND01G-B2B, NAND02G-B2C
9
Program and erase times and endurance cycles
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in Table 18.
Table 18.
Program, erase times and program erase endurance cycles
NAND flash
Parameters
Unit
Min
Page program time
Block erase time
Program/erase cycles per block (with ECC)
Data retention
Typ
Max
200
700
µs
2
3
ms
100 000
cycles
10
years
39/60
Maximum ratings
10
NAND01G-B2B, NAND02G-B2C
Maximum ratings
Stressing the device above the ratings listed in Table 19: Absolute maximum ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 19.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
Min
Max
TBIAS
Temperature under bias
– 50
125
°C
TSTG
Storage temperature
– 65
150
°C
VIO(1)
1.8 V devices
– 0.6
2.7
V
Input or output voltage
3 V devices
– 0.6
4.6
V
1.8 V devices
– 0.6
2.7
V
3 V devices
– 0.6
4.6
V
VDD
Supply voltage
1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
Maximum voltage may overshoot to VDD + 2 V for less than 20 ns during transitions on I/O pins.
40/60
NAND01G-B2B, NAND02G-B2C
11
DC and AC parameters
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 20: Operating and AC measurement conditions. Designers should check that the
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 20.
Operating and AC measurement conditions
NAND flash
Parameter
Units
Supply voltage (VDD)
Ambient temperature (TA)
Load capacitance (CL)
(1 TTL GATE and CL)
Min
Max
1.8 V devices
1.7
1.95
V
3 V devices
2.7
3.6
V
Grade 1
0
70
°C
Grade 6
–40
85
°C
1.8 V devices
30
pF
3 V devices (2.7 - 3.6 V)
50
pF
1.8 V devices
0
VDD
V
3 V devices
0.4
2.4
V
Input pulses voltages
Input and output timing ref. voltages
Output circuit resistor Rref
Input rise and fall times
Table 21.
CI/O
V
8.35
kΩ
5
ns
Capacitance(1)
Symbol
CIN
VDD/2
Parameter
Test condition
Input capacitance
Input/output
capacitance(2)
Typ
Max
Unit
VIN = 0 V
10
pF
VIL = 0 V
10
pF
1. TA = 25 °C, f = 1 MHz. CIN and CI/O are not 100% tested.
2. Input/output capacitances double in stacked devices.
41/60
DC and AC parameters
NAND01G-B2B, NAND02G-B2C
Figure 18. Equivalent testing circuit for AC characteristics measurement
VDD
2Rref
NAND flash
CL
2Rref
GND
GND
Ai11085
42/60
NAND01G-B2B, NAND02G-B2C
Table 22.
Symbol
DC characteristics, 1.8 V devices
Parameter
IDD1
IDD2
DC and AC parameters
Operating current
Test conditions
Min
Typ
Max
Unit
Sequential
read
tRLRL minimum
E = VIL, IOUT = 0 mA
-
8
15
mA
Program
–
-
8
15
mA
Erase
–
-
8
15
mA
IDD3
IDD5
Standby current (CMOS)(1)
E = VDD – 0.2,
WP = 0/VDD
-
10
50
µA
ILI
Input leakage current(1)
VIN = 0 to VDDmax
-
–
±10
µA
ILO
Output leakage current(1)
VOUT = 0 to VDDmax
-
–
±10
µA
VIH
Input high voltage
–
VDD - 0.4
–
VDD + 0.3
V
VIL
Input low voltage
–
-0.3
–
0.4
V
VOH
Output high voltage level
IOH = –100 µA
VDD - 0.1
–
–
V
VOL
Output low voltage level
IOL = 100 µA
–
–
0.1
V
IOL (RB)
Output low current (RB)
VOL = 0.1 V
3
4
VLKO
VDD supply voltage (erase and
program lockout)
–
–
–
1.1
V
Test conditions
Min
Typ
Max
Unit
Sequential
Read
tRLRL minimum
E = VIL, IOUT = 0 mA
–
10
20
mA
Program
–
–
10
20
mA
Erase
–
–
10
20
mA
1
mA
mA
1. Leakage current and standby current double in stacked devices.
Table 23.
Symbol
DC characteristics, 3 V devices
Parameter
IDD1
IDD2
Operating current
IDD3
IDD4
Standby current
(TTL)(1)
E = VIH, WP = 0/VDD
IDD5
Standby current (CMOS)(1)
E = VDD – 0.2,
WP = 0/VDD
–
10
50
µA
ILI
Input leakage current(1)
VIN = 0 to VDDmax
–
–
±10
µA
ILO
Output leakage current(1)
VOUT = 0 to VDDmax
–
–
±10
µA
VIH
Input high voltage
–
0.8VDD
–
VDD + 0.3
V
VIL
Input low voltage
–
-0.3
–
0.2VDD
V
VOH
Output high voltage level
IOH = –400 µA
2.4
–
–
V
VOL
Output low voltage level
IOL = 2.1 mA
–
–
0.4
V
IOL (RB)
Output low current (RB)
VOL = 0.4 V
8
10
VLKO
VDD supply voltage (erase and
program lockout)
–
–
–
mA
1.7
V
1. Leakage current and standby current double in stacked devices.
43/60
DC and AC parameters
Table 24.
Symbol
tALLWH
tALHWH
NAND01G-B2B, NAND02G-B2C
AC characteristics for command, address, data input
Alt.
symbol
1.8 V
devices
Parameter
3V
Unit
devices
Address Latch Low to Write Enable High
tALS
AL setup time
Min
25
15
ns
CL setup time
Min
25
15
ns
Address Latch High to Write Enable High
Command Latch High to Write Enable
High
tCLHWH
tCLS
tCLLWH
Command Latch Low to Write Enable
High
tDVWH
tDS
Data Valid to Write Enable High
Data setup time
Min
20
15
ns
tELWH
tCS
Chip Enable Low to Write Enable High
E setup time
Min
35
20
ns
Write Enable High to Address Latch High
AL hold time
Min
10
5
ns
Write Enable High to Address Latch Low
AL hold time
Min
CL hold time
Min
10
5
ns
tWHALH
tWHALL
tALH
Write Enable High to Command Latch
High
tWHCLH
tCLH
tWHCLL
Write Enable High to Command Latch
Low
tWHDX
tDH
Write Enable High to Data Transition
Data hold time
Min
10
5
ns
tWHEH
tCH
Write Enable High to Chip Enable High
E hold time
Min
10
5
ns
tWHWL
tWH
Write Enable High to Write Enable Low
W High hold time Min
15
10
ns
tWLWH
tWP
Write Enable Low to Write Enable High
W pulse width
Min
25
15
ns
tWLWL
tWC
Write Enable Low to Write Enable Low
Write cycle time
Min
45
30
ns
44/60
NAND01G-B2B, NAND02G-B2C
Table 25.
Symbol
tALLRL1
tALLRL2
tBHRL
DC and AC parameters
AC characteristics for operations(1)
Alt.
symbol
1.8 V
devices
3V
devices
Unit
Min
10
10
ns
Min
10
10
ns
Parameter
tAR
Address Latch Low to Read electronic signature
Read Enable Low
Read cycle
tRR
Ready/Busy High to Read Enable Low
Min
20
20
ns
Read busy time
Max
25
25
µs
tBLBH1
tBLBH2
tPROG
Program busy time
Max
700
700
µs
tBLBH3
tBERS
Erase busy time
Max
3
3
ms
Reset busy time, during ready
Max
5
5
µs
Reset busy time, during read
Max
5
5
µs
Reset busy time, during program
Max
10
10
µs
Reset busy time, during erase
Max
500
500
µs
Typ
3
3
µs
Max
700
700
µs
Command Latch Low to Read Enable Low
Min
10
10
ns
Data Hi-Z to Read Enable Low
Min
0
0
ns
tBLBH4
tRST
Ready/Busy Low to
Ready/Busy High
tBLBH5
tCBSY
tCLLRL
tCLR
tDZRL
tIR
tEHQZ
tCHZ
Chip Enable High to Output Hi-Z
Max
30
30
ns
tRHQZ
tRHZ
Read Enable High to Output Hi-z
Max
30
30
ns
tWHWH
tADL(2)
Last address latched to data loading time during program
operations
Min
100
100
ns
tVHWH
tVLWH
tWW(3)
Write protection time
Min
100
100
ns
tELQV
tCEA
Chip Enable Low to Output Valid
Max
45
25
ns
tRHRL
tREH
Read Enable High to
Read Enable Low
Min
15
10
ns
TOH
Chip Enable High or Read Enable high to Output Hold
Min
10
10
ns
tRLRH
tRP
Read Enable Low to
Read Enable High
Read Enable pulse width
Min
25
15
ns
tRLRL
tRC
Read Enable Low to
Read Enable Low
Read cycle time
Min
50
30
ns
tRLQV
tREA
Read Enable Low to
Output Valid
Max
30
20
ns
tWHBH
tR
Write Enable High to
Ready/Busy High
Max
25
25
µs
tWHBL
tWB
Write Enable High to Ready/Busy Low
Max
100
100
ns
tWHRL
tWHR
Write Enable High to Read Enable Low
Min
60
60
ns
tEHQX
tRHQX
Cache busy time
Read Enable High hold time
Read Enable access time
Read ES access time(4)
Read busy time
1. The time to ready depends on the value of the pull-up resistor tied to the ready/busy pin. See Figure 31, Figure 32 and
Figure 33.
2.
tWHWH is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.
3. During a program/erase enable operation, tWW is the delay from WP high to W High.
During a program/erase disable Operation, tWW is the delay from WP Low to W High.
4. ES = electronic signature.
45/60
DC and AC parameters
NAND01G-B2B, NAND02G-B2C
Figure 19. Command latch AC waveforms
CL
tWHCLL
tCLHWH
(CL Setup time)
(CL Hold time)
tWHEH
tELWH
(E Hold time)
H(E Setup time)
E
tWLWH
W
tALLWH
tWHALH
(ALSetup time)
(AL Hold time)
AL
tDVWH
tWHDX
(Data Setup time)
(Data Hold time)
I/O
Command
ai13105
Figure 20. Address latch AC waveforms
tCLLWH
(CL Setup time)
CL
tWLWL
tWLWL
tELWH
tWLWL
tWLWL
(E Setup time)
E
tWLWH
tWLWH
tWLWH
tWLWH
tWLWH
W
tWHWL
tWHWL
tWHWL
tWHWL
tALHWH
(AL Setup time)
tWHALL
tWHALL
tWHALL
tWHALL
(AL Hold time)
AL
tDVWH
tDVWH
(Data Setup time)
tDVWH
tDVWH
tWHDX
tWHDX
tDVWH
tWHDX
tWHDX
tWHDX
(Data Hold time)
I/O
Adrress
cycle 1
Adrress
cycle 2
Adrress
cycle 3
Adrress
cycle 4
Adrress
cycle 5
ai13106
1. A fifth address cycle is required for 2-Gbit devices only.
46/60
NAND01G-B2B, NAND02G-B2C
DC and AC parameters
Figure 21. Data Input Latch AC waveforms
tWHCLH
(CL Hold time)
CL
tWHEH
(E Hold time)
E
tALLWH
(ALSetup time)
tWLWL
AL
tWLWH
tWLWH
tWLWH
W
tDVWH
tDVWH
tDVWH
(Data Setup time)
tWHDX
tWHDX
tWHDX
(Data Hold time)
I/O
Data In 0
Data In 1
Data In
Last
ai13107
1. Data in last is 2112 in x8 devices and 1056 in x16 devices.
Figure 22. Sequential data output after read AC waveforms
tRLRL
(Read Cycle time)
E
tRHRL
tEHQZ
(R High Holdtime)
R
tRHQZ
tRLQV
tRLQV
tRHQZ
tRLQV
(R Accesstime)
I/O
Data Out
Data Out
Data Out
tBHRL
RB
ai08031
1. CL = Low, AL = Low, W = High.
47/60
DC and AC parameters
NAND01G-B2B, NAND02G-B2C
Figure 23. Read status register AC waveforms
tCLLRL
CL
tWHCLL
tCLHWH
tWHEH
E
tELWH
tWLWH
W
tELQV
tWHRL
tEHQZ
R
tDZRL
tDVWH
tWHDX
tRLQV
tRHQZ
(Data Hold time)
(Data Setup time)
I/O
Status Register
Output
70h
ai13108
Figure 24. Read electronic signature AC waveforms
CL
E
W
AL
tALLRL1
R
tRLQV
(Read ES Access time)
I/O
90h
Read Electronic
Signature
Command
00h
Byte1
Byte2
Byte3
Byte4
1st Cycle
Address
Man.
code
Device
code
00h
see Note.1
ai08667
1. Refer to Table 14 for the values of the manufacturer and device codes, and to Table 15 and Table 16 for the information
contained in byte 3 and 4.
48/60
NAND01G-B2B, NAND02G-B2C
DC and AC parameters
Figure 25. Page read operation AC waveforms
CL
E
tWLWL
tEHQZ
W
tWHBL
AL
tALLRL2
tWHBH
tRLRL
tRHQZ
(Read Cycle time)
R
tRLRH
tBLBH1
RB
I/O
00h
Add.N
cycle 1
Command
Code
Add.N
cycle 2
Add.N
cycle 3
Add.N
cycle 4
Add.N
cycle 5
Address N Input
Data
N
30h
Busy
Data
N+1
Data
N+2
Data
Last
Data Output
from Address N to Last Byte or Word in Page
ai13109b
1. A fifth address cycle is required for 2-Gbit devices only.
49/60
DC and AC parameters
NAND01G-B2B, NAND02G-B2C
Figure 26. Page program AC waveforms
CL
E
tWLWL
tWLWL
tWLWL
(Write Cycle time)
W
tWHWH
tWHBL
tBLBH2
(Program Busy time)
AL
R
I/O
80h
Add.N
cycle 1
Add.N
cycle 2
Add.N Add.N Add.N
cycle 3 cycle 4 cycle 5
N
Last
10h
70h
SR0
RB
Page Program
Setup Code
Address Input
Data Input
Confirm
Code
Page
Program Read Status Register
ai13110b
1. A fifth address cycle is required for 2-Gbit devices only.
50/60
NAND01G-B2B, NAND02G-B2C
DC and AC parameters
Figure 27. Block erase AC waveforms
CL
E
tWLWL
(Write Cycle time)
W
tBLBH3
tWHBL
(Erase Busy time)
AL
R
I/O
60h
Add.
Add.
Add.
cycle 1 cycle 2 cycle 3
70h
D0h
SR0
RB
Block Erase
Setup Command
Block Address Input
Confirm
Code
Block Erase
Read Status Register
ai08038b
1. Address cycle 3 is required for 2-Gbit devices only.
Figure 28. Reset AC waveforms
W
AL
CL
R
I/O
FFh
tBLBH4
(Reset Busy time)
RB
ai08043
51/60
DC and AC parameters
NAND01G-B2B, NAND02G-B2C
Figure 29. Program/erase enable waveforms
W
tVHWH
WP
RB
80h
I/O
10h
ai12477
Figure 30. Program/erase disable waveforms
W
tVLWH
WP
High
RB
80h
I/O
10h
ai12478
11.1
Ready/Busy signal electrical characteristics
Figure 32, Figure 31 and Figure 33 show the electrical characteristics for the Ready/Busy
signal. The value required for the resistor RP can be calculated using the following equation:
(V
–
)
DDmax V OLmax
R P min = ------------------------------------------------------------+
I
I OL
L
So,
1.85V
R P min ( 1.8V ) = -------------------------3mA + I L
3.2V
R P min ( 3V ) = -------------------------8mA + I L
where IL is the sum of the input currents of all the devices tied to the Ready/Busy signal. RP
max is determined by the maximum value of tr.
52/60
NAND01G-B2B, NAND02G-B2C
DC and AC parameters
Figure 31. Ready/Busy AC waveform
ready VDD
VOH
VOL
busy
tr
tf
AI07564B
Figure 32. Ready/Busy load circuit
VDD
RP
ibusy
DEVICE
RB
Open Drain Output
VSS
AI07563B
53/60
DC and AC parameters
NAND01G-B2B, NAND02G-B2C
Figure 33. Resistor value versus waveform timings for Ready/Busy signal
VDD = 1.8V, CL = 30pF
VDD = 3.3V, CL = 100pF
400
400
4
4
200
2
1.7
300
2.4
200
0
0.85
60
1.7
30
1.7
1
100
0.8
1
3.6
3.6
100
0.6
0.43
1.7
2
1.2
1
90
0.57
2
200
120
100
3
300
1.7
3
ibusy (mA)
3
tr, tf (ns)
300
ibusy (mA)
tr, tf (ns)
400
0
4
3.6
3.6
1
2
RP (KΩ)
3
4
RP (KΩ)
tf
tr
ibusy
ai07565B
1. T = 25°C.
11.2
Data protection
The Numonyx NAND device is designed to guarantee data protection during power
transitions.
A VDD detection circuit disables all NAND operations, if VDD is below the VLKO threshold.
In the VDD range from VLKO to the lower limit of nominal range, the WP pin should be kept
low (VIL) to guarantee hardware protection during power transitions as shown in the below
figure.
Figure 34. Data protection
VDD
Nominal Range
VLKO
Locked
Locked
W
Ai11086
54/60
NAND01G-B2B, NAND02G-B2C
12
Package mechanical
Package mechanical
In order to meet environmental requirements, Numonyx offers these devices in ECOPACK®
packages. ECOPACK® packages are lead-free. The category of second level interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label.
Figure 35. TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package outline
1
48
e
D1
B
24
L1
25
A2
E1
E
A
A1
DIE
α
L
C
CP
TSOP-G
1. Drawing is not to scale.
Table 26.
TSOP48 - 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.20
Max
0.047
A1
0.10
0.05
0.15
0.004
0.002
0.006
A2
1.00
0.95
1.05
0.039
0.037
0.041
B
0.22
0.17
0.27
0.009
0.007
0.011
0.10
0.21
0.004
0.008
C
CP
0.08
0.003
D1
12.00
11.90
12.10
0.472
0.468
0.476
E
20.00
19.80
20.20
0.787
0.779
0.795
E1
18.40
18.30
18.50
0.724
0.720
0.728
e
0.50
–
–
0.020
–
L
0.60
0.50
0.70
0.024
0.020
0.028
L1
0.80
α
3°
0°
5°
0.031
0°
5°
3°
55/60
Package mechanical
NAND01G-B2B, NAND02G-B2C
Figure 36. VFBGA63 9.5 x 12 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline
D
D2
D1
FD1
SD
FD
e
e
E E2
SE
E1
ddd
FE1
BALL "A1"
FE
e
b
A
A2
A1
BGA-Z67
1. Drawing is not to scale
Table 27.
VFBGA63 9.5 x 12 mm - 6 x 8 ball array, 0.80 mm pitch, package mechanical data
millimeters
inches
Symbol
Typ
Min
A
Typ
Min
1.05
A1
Max
0.041
0.25
A2
0.010
0.70
0.028
b
0.45
0.40
0.50
0.018
0.016
0.020
D
9.50
9.40
9.60
0.374
0.370
0.378
D1
4.00
0.157
D2
7.20
0.283
ddd
56/60
Max
0.10
11.90
E
12.00
E1
5.60
0.220
E2
8.80
0.346
e
0.80
FD
2.75
0.108
FD1
1.15
0.045
FE
3.20
0.126
FE1
1.60
0.063
SD
0.40
0.016
SE
0.40
0.016
–
12.10
0.004
–
0.472
0.031
0.468
0.476
–
–
NAND01G-B2B, NAND02G-B2C
Package mechanical
Figure 37. VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package outline
D
D2
D1
FD1
FE
e
E
E2
SE
E1
ddd
b
BALL "A1"
FE1
A
e
SD
FD
A2
A1
BGA-Z75
1. Drawing is not to scale
Table 28.
VFBGA63 9 x 11 mm - 6 x 8 active ball array, 0.80 mm pitch, package mechanical data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.05
A1
0.041
0.25
A2
Max
0.010
0.70
0.028
b
0.45
0.40
0.50
0.018
0.016
0.020
D
9.00
8.90
9.10
0.354
0.350
0.358
D1
4.00
0.157
D2
7.20
0.283
ddd
0.10
10.90
E
11.00
E1
5.60
0.220
E2
8.80
0.346
e
0.80
FD
2.50
0.098
FD1
0.90
0.035
FE
2.70
0.106
FE1
1.10
0.043
SD
0.40
–
–
SE
0.40
–
–
–
11.10
0.004
–
0.433
0.429
0.437
–
–
0.016
–
–
0.016
–
–
0.031
57/60
Ordering information
13
NAND01G-B2B, NAND02G-B2C
Ordering information
Table 29.
Ordering information scheme
Example:
NAND02GR3B2C ZA 6
E
Device type
NAND flash memory
Density
01G = 1 Gbit
02G = 2 Gbits
Operating voltage
R = VDD = 1.7 to 1.95 V
W = VDD = 2.7 to 3.6 V
Bus width
3 = x8
4 = x16(1)
Family identifier
B = 2112-byte/ 1056-word page
Device options
2 = chip enable don't care enabled
Product version
B = second version (1-Gbit devices)
C = third version (2-Gbit devices)
Package
N = TSOP48 12 x 20 mm
ZA = VFBGA63 9.5 x 12 x 1 mm, 0.8 mm pitch(2)
ZA= VFBGA63 9 x 11 x 1 mm, 0.8 mm pitch(3)
Temperature range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
E = ECOPACK® package, standard packing
F = ECOPACK® package, tape & reel packing
1. x16 organization only available for MCP products.
2. For NAND02G-B2C devices only.
3. For NAND01G-B2B devices only.
Note:
58/60
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to
’1’. For further information on any aspect of this device, please contact your nearest
Numonyx sales office.
NAND01G-B2B, NAND02G-B2C
14
Revision history
Revision history
Table 30.
Document revision history
Date
Version
18-May-2006
0.1
01-Jun-2006
1
Document status changed to preliminary data.
09-Jun-2006
2
VFBGA63 9 x 11 x 1 mm package added for NAND01G-B2B devices
and VFBGA63 9.5 x 12 x 1 mm dedicated to NAND02G-B2C devices.
3
Note 2 below Commands removed.
Overview of Section 6.1: Read memory array updated. Paragraph
concerning Exit Cache Read command updated in Section 6.2: Cache
read. Block replacement section replaced by Section 8.2: NAND flash
memory failure modes.
tWHALL added in Table 24: AC characteristics for command, address,
data input.
RB waveform updated in Figure 25: Page read operation AC
waveforms, and CL waveform modified in Figure 26: Page program AC
waveforms.
20-Apr-2007
4
An error correction code (ECC) is required to obtain a data integrity of
100 000 program/erase cycles per block.
Section 3.9: Ready/Busy (RB) modified.
tRHRL2 timing removed from Figure 9: Page program operation and
Table 25: AC characteristics for operations.
Note removed below Figure 11: Copy back program.
tWHBH2 replaced by tBLBH5, cash busy time, in Section 6.5: Cache
program.
Alt. symbol for tBLBH4 is tRST in Table 25: AC characteristics for
operations.
14-Apr-2008
5
Applied Numonyx branding.
23-Nov-2006
Changes
Initial release.
59/60
NAND01G-B2B, NAND02G-B2C
Please Read Carefully:
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applications.
Numonyx may make changes to specifications and product descriptions at any time, without notice.
Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the
presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied,
by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.
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these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
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visiting Numonyx's website at http://www.numonyx.com.
Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries.
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Copyright © 11/5/7, Numonyx, B.V., All Rights Reserved.
60/60