HTS25A60H VDRM = 600 V IT(RMS) = 25 A ITSM = 260 A IGT = 35mA HTS25A60H 3 Quadrants Standard TRIAC Symbol FEATURES Repetitive Peak Off-State Voltage : 600V R.M.S On–State Current (IT(RMS) = 25A) Gate Trigger Current : 35mA High commutation capability. TO-220F Applications General purpose of AC switching, heating control, motor control, etc T1 T2 G General Description Semihow’s standard TRIAC product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage. It is generally suitable for power and phase control in ac application Absolute Maximum Ratings (TJ=25℃ unless otherwise specified ) Symbol Parameter Ratings Unit VDRM Repetitive Peak Off-State Voltage 600 V VRRM Repetitive Peak Reverse Voltage 600 V IT(AV) Average On-State Current 22.5 A IT(RMS) R.M.S. On-State Current 25 A ITSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive 250/260 A Fusing Current t = 10ms 312 A2S Forward Peak Gate Power Dissipation TJ = 125 °C 5 W Forward Average Gate Power Dissipation TJ = 125 °C, over any 20ms 1 W IFGM Forward Peak Gate Current TJ = 125 °C, pulse width ≤ 20us 2 A VRGM Reverse Peak Gate Voltage TJ = 125 °C, pulse width ≤ 20us 10 V Operating Junction Temperature -40~+125 oC Storage Temperature -40~+150 oC I2t PGM PG(AV) TJ TSTG Conditions Sine wave, 50/60Hz, Gate open Full sine wave, TC = 81oC ◎ SEMIHOW REV.A1,Oct 2013 (TJ=25℃ unless otherwise specified ) Symbol Parameter IDRM Repetitive Peak Off-State Current IRRM Repetitive Peak Reverse Current IGT Gate Trigger Current VGT Conditions VD = VDRM Min Typ Max Unit TJ=25oC - - 50 uA TJ=125oC - - 5 mA TJ=25oC - - 50 uA TJ =125oC - - 5 mA VD = 12V, RL=330Ω 1+, 1-, 3- - - 35 mA Gate Trigger Voltage VD = 12V, RL=330Ω 1+, 1-, 3- - - 1.5 V VGD Non-Trigger Gate Voltage1 VD = 12V, RL=330Ω, TJ=125oC 0.2 - - V VTM Peak On-State Voltage IT = 35A, IG = 50mA - 1.1 1.4 V dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, TJ=125oC 200 - - V/us Holding current IT= 0.2A - 55 - mA Min Typ Max Unit IH VD = VDRM Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Thermal Characteristics Symbol Parameter Conditions RθJC Thermal Resistance Junction to Case 1.7 oC/W RθJA Thermal Resistance Junction to Ambient 58 oC/W ◎ SEMIHOW REV.A1,Oct 2013 HTS25A60H Electrical Characteristics HTS25A60H Typical Characteristics 180o 150o 30 Power dissipation, PD [W] Maximum allowable case temperature, TC [oC] 40 120o 20 90o 10 o 60 30o 0 0 5 10 15 20 25 30 130 30o 120 60o 110 100 90o 90 120o 80 150o 70 180o 60 50 0 5 R.M.S. on state current, IT(RMS) [A] 10 15 20 25 30 R.M.S. on state current, IT(RMS) [A] Fig 1. R.M.S. current vs. Power dissipation Fig 2. R.M.S. current vs. Case temperature 300 1 Surge on state current, ITSM [A] 10 Gate voltage, VG [V] PGM(5W) PG(AV)(1W) 100 25[oC] I+GT1 I-GT1 I-GT3 250 200 60Hz 150 50Hz 100 50 VGD 10-1 100 101 102 103 0 100 104 101 Fig 4. Surge on state current rating (Non-repetitive) Fig 3. Gate power characteristics 2 2 IGT(toC) X 100 (%) IGT(25oC) IGT(toC) X 100 (%) IGT(25oC) 102 Time [cycles] Gate current, IG [mA] I+GT1 I-GT1 I-GT3 1 0 -50 -25 0 25 50 75 100 125 150 Junction temperature, TJ [oC] Fig 5. Gate trigger current vs. junction temperature V+GT1 V-GT1 V-GT3 1 0 -50 -25 0 25 50 75 100 125 150 Junction temperature, TJ [oC] Fig 6. Gate trigger voltage vs. junction temperature ◎ SEMIHOW REV.A1,Oct 2013 HTS25A60H Typical Characteristics 101 Thermal impedance [oC/W] 1 IH(25oC) IH(toC) X 100(%) 2 0 -50 -25 0 25 50 75 100 125 150 100 10-1 10-2 10-1 o 100 101 Pulse Time [sec] Junction Temperature, TJ [ C] Fig 7. Holding current vs. Junction temperature Fig 8. Thermal Impedance vs. pulse time Instantaneou on state current, IT [A] 103 102 101 150oC 25oC 0 10 10-1 RS=0.017Ω VTO=1.0V 0 1 2 3 4 Instantaneou on state voltage, VT [V] Fig 9. Instantaneous on state current vs. Instantaneous on state voltage Measurement of gate trigger current RL RL RG VG (1) Quadrant I VDD RG VG (2) Quadrant II RL VDD RG VG (3) Quadrant III RL VDD VDD RG VG (4) Quadrant IV Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet. ◎ SEMIHOW REV.A1,Oct 2013 HTS25A60H Package Dimension TO-220F ±0.20 ±0.20 0 0.2 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 φ 8± 1 . 3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A1,Oct 2013