ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive. Features D • Low on-resistance • 2.5V gate drive capability • SOT23 package G Applications • Buck/Boost DC-DC Converters • Motor Control • LED Lighting S Ordering information DEVICE ZXMN2F34FHTA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 S D G Device marking KNB Issue 2 - February 2008 © Zetex Semiconductors plc 2008 Top view 1 www.zetex.com ZXMN2F34FH Absolute maximum ratings Parameter Symbol Limit Unit Drain source voltage VDSS 20 V Gate source voltage VGS ±12 V ID 4.0 3.3 3.4 A A A IDM 18.6 A IS 2.1 A Pulsed source current (body diode)(c) ISM 18.6 A Power dissipation at TA =25°C(a) PD 0.95 W 7.6 mW/°C 1.4 W 11 mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 131 °C/W Junction to ambient(b) R⍜JA 89 °C/W Junction to lead(d) R⍜JL 68 °C/W Continous Drain Current @ VGS=4.5; TA=25°C(b) @ VGS=4.5; TA=70°C(b) @ VGS=4.5; TA=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Linear derating factor PD Power dissipation at TA =25°C(b) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t≤ 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs - pulse width limited by maximum junction temperature. (d) Thermal resistance from junction to solder-point (at end of drain lead). Issue 2 - February 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXMN2F34FH Thermal characteristics Issue 2 - February 2008 © Zetex Semiconductors plc 2008 3 www.zetex.com ZXMN2F34FH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Drain-Source Breakdown Voltage V(BR)DSS 20 Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Gate-Source Threshold Voltage VGS(th) Static Drain-Source On-State Resistance (*) RDS(on) Forward Transconductance(*)(†) gfs Input Capacitance Typ. Max. Unit Conditions Static V ID= 250μA, VGS=0V 1 μA VDS= 20V, VGS=0V 100 nA VGS=±12V, VDS=0V 1.5 V ID= 250μA, VDS=VGS 0.060 0.120 Ω Ω VGS= 4.5V, ID= 2.5A VGS= 2.5V, ID= 1.0A 7.5 S VDS= 10V, ID= 2.5A Ciss 277 pF Output Capacitance Coss 65 pF Reverse Transfer Capacitance Crss 35 pF Turn-On-Delay Time td(on) 2.65 ns Rise Time tr 4.2 ns Turn-Off Delay Time td(off) 9.9 ns Fall Time tf 5.1 ns Total Gate Charge Qg 2.8 nC Gate-Source Charge Qgs 0.61 nC Gate Drain Charge Qgd 0.63 nC Diode Forward Voltage(*) VSD 0.73 Reverse recovery time(†) trr 0.5 0.8 Dynamic (†) VDS= 10V, VGS=0V f=1MHz Switching (‡)(†) VDD= 10V, VGS= 4.5V ID= 1A RG ≈ 6.0Ω VDS= 10V, VGS= 4.5V ID= 2.5A Source-drain diode Reverse recovery charge(†) Qrr 1.2 V IS= 1.25A, VGS=0V 6.5 ns 1.4 nC Tj=25oC, IF=1.65A di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%. (†) For design aid only, not subject to production testing. (‡) Switching characteristics are independent of operating junction temperature. Issue 2 - February 2008 © Zetex Semiconductors plc 2008 4 www.zetex.com ZXMN2F34FH Typical characteristics Issue 2 - February 2008 © Zetex Semiconductors plc 2008 5 www.zetex.com ZXMN2F34FH Typical characteristics Test circuits Issue 2 - February 2008 © Zetex Semiconductors plc 2008 6 www.zetex.com ZXMN2F34FH Package outline - SOT23 E e e1 b 3 leads L1 D E1 A L A1 Dim. c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.037 NOM Max. Inches 1.90 NOM Min. Max. 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 2 - February 2008 © Zetex Semiconductors plc 2008 7 www.zetex.com ZXMN2F34FH Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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