ADPOW APTGF75H120TG Full - bridge npt igbt power module Datasheet

APTGF75H120TG
Full - Bridge
NPT IGBT Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
VBUS
Q3
G3
G1
OUT1
E1
OUT2
E3
Q2
Q4
G2
G4
E2
E4
NTC1
NTC2
0/VBUS
G3
G4
E3
E4
VBUS
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
OUT2
OUT1
0/VBUS
E1
E2
NTC2
G1
G2
NTC1
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
Tc = 25°C
Max ratings
1200
100
75
150
±20
500
Tj = 150°C
150A @ 1200V
Tc = 25°C
Tc = 80°C
Tc = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGF75H120TG – Rev 1 January, 2006
Q1
VCES = 1200V
IC = 75A @ Tc = 80°C
APTGF75H120TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
Test Conditions
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 75A
Tj = 125°C
VGE = VCE, IC = 2.5 mA
VGE = ±20V, VCE = 0V
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
IF
DC Forward Current
VF
Diode Forward Voltage
Er
Reverse Recovery Energy
trr
Reverse Recovery Time
VR=1200V
IF = 50A
IF = 50A
VR = 600V
Reverse Recovery Charge
Unit
µA
3.7
V
6.5
±500
V
nA
Max
Unit
nF
ns
ns
30
9
mJ
4
Typ
Max
1200
di/dt =1500A/µs
Qrr
Typ
5.1
0.7
0.4
120
50
310
20
Max
130
60
360
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
4.5
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 75A
R G = 7.5Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 75A
R G = 7.5Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 75A
Tj = 125°C
R G = 7.5Ω
Test Conditions
Typ
250
500
3.2
3.9
Unit
V
Tj = 25°C
Tj = 125°C
350
600
µA
Tc = 80°C
Tj = 25°C
Tj = 125°C
50
2.1
1.9
A
Tj = 125°C
3
mJ
Tj = 25°C
95
Tj = 125°C
190
Tj = 25°C
4.2
Tj = 125°C
9
APT website – http://www.advancedpower.com
V
ns
µC
2-5
APTGF75H120TG – Rev 1 January, 2006
Symbol Characteristic
APTGF75H120TG
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.25
0.6
Unit
T: Thermistor temperature
Thermal and package characteristics
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Symbol Characteristic
RthJC
Min
IGBT
Diode
Junction to Case Thermal resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M5
2500
-40
-40
-40
1.5
°C/W
V
150
125
100
4.7
160
°C
N.m
g
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT website – http://www.advancedpower.com
3-5
APTGF75H120TG – Rev 1 January, 2006
SP4 Package outline (dimensions in mm)
APTGF75H120TG
Typical Performance Curve
Output Characteristics
150
125
125
75
VGE=20V
VGE =12V
75
VGE=9V
50
TJ =125°C
25
25
0
0
0
1
2
3
VCE (V)
4
5
6
0
1
2
3
4
V CE (V)
5
6
Energy losses vs Collector Current
Transfert Characteristics
150
28
V CE = 600V
V GE = 15V
RG = 7.5 Ω
T J = 125°C
24
125
20
E (mJ)
100
T J=125°C
75
50
Eon
16
12
Eoff
8
T J=25°C
25
4
Er
0
0
5
6
7
8
9
10
11
0
12
25
50
75
100
125
150
IC (A)
V GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
35
175
V CE = 600V
V GE =15V
I C = 75A
T J = 125°C
25
20
Eon
150
125
IC (A)
30
E (mJ)
VGE=15V
100
50
IC (A)
TJ = 125°C
T J=25°C
100
IC (A)
IC (A)
Output Characteristics (VGE=15V)
150
15
10
100
75
VGE=15V
T J=125°C
RG=7.5 Ω
50
Eoff
25
5
0
0
0
10
20
30
40
50
Gate Resistance (ohms)
60
0
70
300
600
900
1200
1500
V CE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
IGBT
0.25
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGF75H120TG – Rev 1 January, 2006
Thermal Impedance (°C/W)
0.3
APTGF75H120TG
Forward Characteristic of diode
125
ZCS
30
20
10
0
ZVS
VCE=600V
D=50%
RG=7.5 Ω
TJ =125°C
TC=75°C
100
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
100
90
80
70
60
50
40
hard
switching
75
T J=125°C
50
25
T J=25°C
0
0
20
40
60
IC (A)
80
0
100
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.7
0.6
0.5
Diode
0.9
0.7
0.4
0.3
0.2
0.1
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGF75H120TG – Rev 1 January, 2006
rectangular Pulse Duration (Seconds)
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