BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP60 - BSP52 (PNP) 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking Pin Configuration Package BSP50 BSP50 1=B 2=C 3=E 4=C - - SOT223 BSP51 BSP51 1=B 2=C 3=E 4=C - - SOT223 BSP52 BSP52 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BSP50 45 BSP51 60 BSP52 80 Collector-base voltage Unit VCBO BSP50 60 BSP51 80 BSP52 90 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current ICM 2 Base current IB 100 mA Total power dissipation- Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg A TS ≤ 124 °C 1Pb-containing -65 ... 150 package may be available upon special request 1 2007-03-30 BSP50-BSP52 Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit ≤ 17 K/W Values Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BSP50 45 - - IC = 10 mA, IB = 0 , BSP51 60 - - IC = 10 mA, IB = 0 , BSP52 80 - - IC = 100 µA, IE = 0 , BSP50 IC = 100 µA, IE = 0 , BSP51 60 - - 80 - - IC = 100 µA, IE = 0 , BSP52 90 - - V(BR)EBO 5 - - I CES - - 10 µA I EBO - - 10 µA Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current VCE = V CE0max, VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) - h FE IC = 150 mA, V CE = 10 V 1000 - - IC = 500 mA, V CE = 10 V 2000 - - Collector-emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA Base emitter saturation voltage 2) - - 1.3 - - 1.8 - - 1.9 - - 2.2 VBEsat IC = 500 mA, IB = 0.5 mA IC = 1 mA, IB = 1 A 1For V VCEsat calculation of R thJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 2007-03-30 BSP50-BSP52 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. fT - 200 - MHz t(on) - 400 - ns t(off) - 1500 - AC Characteristics Transition frequency IC = 100 mA, V CE = 5 V, f = 100 MHz Tum-on time IC = 500 mA, IB1 = IB2 = 0.5 mA Tum-off time IC = 500 mA, IB1 = IB2 = 0.5 mA 3 2007-03-30 BSP50-BSP52 Switching time test circuit Switching time waveform 4 2007-03-30 BSP50-BSP52 DC current gain hFE = ƒ(IC) VCE = 10 V 10 5 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat), IB = Parameter BSP 50...52 EHP00661 10 3 ΙC 5 BSP 50...52 EHP00663 mA 5 Ι B = 0.5 mA 10 4 4 mA 5 10 2 5 10 3 5 10 2 10 1 10 2 10 3 10 1 mA 10 4 0 V 1 ΙC V CE sat Transition frequency fT = ƒ(IC) VCE = 5 V, f = 100 MHz Base-emitter saturation voltage IC = ƒ(V BEsat), IB = Parameter 10 3 ΙC BSP 50...52 2 10 3 EHP00664 BSP 50...52 EHP00662 MHz mA fT 5 Ι B = 0.5 mA 4 mA 10 2 10 2 5 5 10 1 0 1 2 V 10 1 10 1 3 5 10 2 mA 10 3 ΙC V BE sat 5 2007-03-30 BSP50-BSP52 Collector-base capacitance Ccb = ƒ(VCB) Total power dissipation Ptot = ƒ(TS) Emitter-base capacitance Ceb = ƒ(VEB) 1650 28 pF CEB 1350 22 1200 20 P tot CCB(C EB) 24 mW 18 16 1050 900 14 750 12 10 600 8 450 6 300 4 150 CCB 2 0 0 4 8 12 16 V 0 0 22 15 30 45 60 75 90 105 120 VCB(VEB) °C 150 TS External resistance R BE = ƒ (TA)** VCB = V CEmax Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) ** RBEmax for thermal stability 10 3 BSP 50...52 Ptot max 5 Ptot DC EHP00943 D= tp T tp 10 7 R BE BSP 50...52 EHP00660 Ω 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 6 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 10 5 10 -1 s 10 0 tp 0 50 100 ˚C 150 TA 6 2007-03-30 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BSP50-BSP52 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 7 2007-03-30 BSP50-BSP52 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-03-30