FDMS5360L_F085 N-Channel Power Trench® MOSFET 60V, 60A, 8.5mΩ Features Typ rDS(on) = 6.5mΩ at VGS = 10V, ID = 60A Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 60 Units V ±20 V Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 60 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) 115 A mJ Power Dissipation 150 W Derate above 25oC 1 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 175 oC 1 oC/W 50 oC/W (Note 3) Package Marking and Ordering Information Device Marking FDMS5360L Device FDMS5360L_F085 Package Power 56 Reel Size 13” Tape Width 12mm Quantity 3000 units Notes: 1: Current is limited by junction temperature. 2: Starting TJ = 25°C, L = 0.1mH, IAS = 48A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2013 Fairchild Semiconductor Corporation FDMS5360L_F085 Rev. C1 1 www.fairchildsemi.com FDMS5360L_F085 N-Channel Power Trench® MOSFET January 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 60V, VGS = 0V 60 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) VGS = ±20V - - 1 mA - - ±100 nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 60A, VGS= 10V ID = 60A, VGS= 4.5V 1.0 1.9 3.0 V TJ = 25oC - 6.5 8.5 mΩ - 14.3 17.5 mΩ TJ = 25oC - 8.7 10.5 mΩ - 18.2 21.6 mΩ TJ = 175oC(Note 4) TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDS = 30V, VGS = 0V, f = 1MHz VDD = 48V ID = 60A - 3695 - pF - 295 - pF - 155 - pF - 1.3 - Ω - 64 72 nC - 6.5 7.8 nC - 13.8 - nC - 13.5 - nC Switching Characteristics ton Turn-On Time - - 40 ns td(on) Turn-On Delay Time - 22 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 14 - ns - 79 - ns Fall Time - 16 - ns Turn-Off Time - - 104 ns VDD = 30V, ID = 60A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 60A, VGS = 0V - - 1.25 V Trr Reverse Recovery Time - 36 41 ns Qrr Reverse Recovery Charge IF = 60A, dISD/dt = 100A/μs, VDD=48V - 36 45 nC Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDMS5360L_F085 Rev. C1 2 www.fairchildsemi.com FDMS5360L_F085 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 0.8 0.6 0.4 0.2 0.0 VGS = 10V 70 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 80 1.2 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 IDM, PEAK CURRENT (A) VGS = 10V 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK 10 CURRENT AS FOLLOWS: I = I2 175 - TC 150 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDMS5360L_F085 Rev. C1 3 www.fairchildsemi.com FDMS5360L_F085 N-Channel Power Trench® MOSFET Typical Characteristics 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1ms 1 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 175oC 80 TJ = 25oC o TJ = -55 C 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4V 80μs PULSE WIDTH Tj=25oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 VGS = 0 V 10 TJ = 175 oC TJ = 25 oC 1 0.1 0.2 0.4 0.6 0.8 1.0 VGS 10V Top 8V 6V 5V 4.5V 4V Bottom 160 120 1.2 4V 80 40 0 5 Figure 9. Saturation Characteristics FDMS5360L_F085 Rev. C1 100 200 100 50 10 Figure 8. Forward Diode Characteristics VGS 10V Top 8V 6V 5V 4.5V 4V Bottom 150 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 300 200 100 0.01 0.0 6 Figure 7. Transfer Characteristics 250 0.1 300 120 0 0.01 Figure 6. Unclamped Inductive Switching Capability VDD = 5V 40 STARTING TJ = 150oC NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 160 STARTING TJ = 25oC 10 tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area 200 100 1 0.001 0.1 1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 80μs PULSE WIDTH Tj=175oC 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDMS5360L_F085 N-Channel Power Trench® MOSFET Typical Characteristics rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID =60A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 40 30 20 TJ = 175oC 10 0 2 TJ = 25oC 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. Rdson vs Gate Voltage 2.0 1.6 1.2 0.8 ID = 60A VGS = 10V 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.2 VGS = VDS ID = 250μA 1.2 ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX Figure 12. Normalized Rdson vs Junction Temperature 1.5 1.1 0.9 1.0 0.6 0.9 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.8 -80 200 Figure 13. Normalized Gate Threshold Voltage vs Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss 100 Crss 10 f = 1MHz VGS = 0V 1 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs Drain to Source Voltage FDMS5360L_F085 Rev. C1 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 CAPACITANCE (pF) 2.4 10 ID = 60A 8 VDD = 30V VDD = 24V VDD = 36V 6 4 2 0 0 10 20 30 40 50 Qg, GATE CHARGE(nC) 60 70 Figure 16. Gate Charge vs Gate to Source Voltage 5 www.fairchildsemi.com FDMS5360L_F085 N-Channel Power Trench® MOSFET Typical Characteristics tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 FDMS5360L_F085 Rev. C1 6 www.fairchildsemi.com FDMS5360L_F085 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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