Renesas HVL144AM Silicon epitaxial trench pin diode for antenna switching Datasheet

HVL144AM
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G0199-0200
Rev.2.00
Jan 20, 2006
Features
•
•
•
•
Adopting the trench structure improves low capacitance.(C = 0.43 pF max)
Low forward resistance. (rf = 1.8 Ω max)
Low operation current.
Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.
Ordering Information
Type No.
HVL144AM
Laser Mark
K
Package Name
TEFP
Pin Arrangement
Cathode mark
Mark
•
K
1
2
1. Cathode
2. Anode
Rev.2.00 Jan 20, 2006 page 1 of 5
Package Code
PUSF0002ZA-A
HVL144AM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
Value
30
100
100
125
−55 to +125
VR
IF
Pd
Tj
Tstg
Unit
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Reverse current
Forward voltage
Capacitance
Forward resistance
ESD-Capability *1
Symbol
IR
VF
C
rf
—
Min
—
—
—
—
100
Typ
—
—
—
—
—
Max
100
0.90
0.43
1.80
—
Unit
nA
V
pF
Ω
V
Test Condition
VR = 30 V
IF = 2 mA
VR = 1 V, f = 1 MHz
IF = 2 mA, f = 100 MHz
C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V
2. For TEFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.
Rev.2.00 Jan 20, 2006 page 2 of 5
HVL144AM
Main Characteristic
10-8
10-2
Ta = 75°C
10-9
Reverse current IR (A)
Forward current IF (A)
10-4
Ta = 25°C
10-6
10-8
10-10
10-12
10-10
Ta = 75°C
10-11
Ta = 25°C
10-12
10-13
0
0.2
0.4
0.6
0.8
10-14
1.0
0
10
20
30
50
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
f = 100MHz
10
Forward resistance rf (Ω)
10
Capacitance C (pF)
40
1.0
0.1
0.1
1.0
10
1.0
0.1
10-4
10-3
10-2
10-1
Reverse voltage VR (V)
Forward current IF (A)
Fig.3 Capacitance vs. Reverse voltage
Fig.4 Forward resistance vs. Forward current
Rev.2.00 Jan 20, 2006 page 3 of 5
Forward resistance (parallel) rP (Ω)
HVL144AM
106
f=100MHz
105
104
103
102
101
100
10-1
0
0.2
0.4
0.6
0.8
Forward voltage VF (V)
Fig.5 Forward resistance (parallel) vs. Forward voltage
Rev.2.00 Jan 20, 2006 page 4 of 5
HVL144AM
Package Dimensions
Package Name
TEFP
JEITA Package Code

RENESAS Code
PUSF0002ZA-A
Previous Code
TEFP / TEFPV
MASS[Typ.]
0.0006g
D
b
E HE
c
φb
e1
A
Pattern of terminal position areas
Rev.2.00 Jan 20, 2006 page 5 of 5
Reference
Symbol
A
b
c
D
E
HE
φb
e1
Dimension in Millimeters
Min
0.25
0.08
0.55
0.75
0.95
-
Nom
0.30
0.13
0.60
0.80
1.00
0.40
1.00
Max
0.40
0.35
0.18
0.65
0.90
1.05
-
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