ON MPSA77G Darlington transistors pnp silicon Datasheet

MPSA75, MPSA77
Darlington Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCES
−40
−60
Vdc
VEBO
−10
Vdc
Collector Current − Continuous
IC
−500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
TJ, Tstg
−55 to +150
°C
Collector −Emitter Voltage
MPSA75
MPSA77
Emitter −Base Voltage
Operating and Storage Junction
Temperature Range
BASE
2
EMITTER 1
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RJA
200
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
TO−92
CASE 29−11
STYLE 1
1
2
MPS
Axx
AYWW G
G
3
MPSAxx = Device Code
xx = 75 or 77
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
MPSA75RLRA
TO−92
2,000/Tape & Reel
TO−92
(Pb−Free)
2,000/Tape & Reel
TO−92
2,000/Ammo Pack
TO−92
(Pb−Free)
2,000/Ammo Pack
TO−92
5,000 Units/Box
TO−92
(Pb−Free)
5,000 Units/Box
TO−92
2,000/Ammo Pack
TO−92
(Pb−Free)
2,000/Ammo Pack
MPSA75RLRAG
MPSA75RLRP
MPSA75RLRPG
MPSA77
MPSA77G
MPSA77RLRA
MPSA77RLRAG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
Shipping †
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MPSA75/D
MPSA75, MPSA77
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −100 Adc, VBE = 0)
MPSA75
MPSA77
V(BR)CES
−40
−60
−
−
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
MPSA75
MPSA77
V(BR)CBO
−40
−60
−
−
−
−
Vdc
Collector Cutoff Current
(VCB= −30 V, IE = 0)
(VCB = −50 V, IE = 0)
MPSA75
MPSA77
−
−
−
−
−100
−100
Collector Cutoff Current
(VCE = −30 V, VBE = 0)
(VCE = −50 V, VBE = 0)
MPSA75
MPSA77
−
−
−
−
−500
−500
−
−
−100
10,000
10,000
−
−
−
−
VCE(sat)
−
−
−1.5
Vdc
VBE
−
−
−2.0
Vdc
|hfe|
1.25
2.4
−
−
ICBO
nAdc
ICES
Emitter Cutoff Current
(VEB = −10 Vdc)
IEBO
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
(IC = −100 mA, VCE = −5.0 V)
hFE
Collector −Emitter Saturation Voltage
(IC = −100 mA, IB = −0.1 mAdc)
Base −Emitter On Voltage
(IC = −100 mA, VCE = −5.0 Vdc)
−
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − High Frequency
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)
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2
MPSA75, MPSA77
hFE , DC CURRENT GAIN (X1.0 K)
200
TA = 125°C
100
70
50
30
−10 V
25°C
VCE = −2.0 V
−5.0 V
20
10
7.0
5.0
−55°C
3.0
2.0
−0.3
−0.5
−0.7
−1.0
−2.0
−3.0
−5.0
−7.0
−10
−20
−30
−50
−70
−100
−200 −300
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS
−2.0
TA = 25°C
VBE(sat) @ IC/IB = 100
V, VOLTAGE (VOLTS)
−1.6
−1.2
VBE(on) @ VCE = −5.0 V
−0.8
VCE(sat) @ IC/IB = 1000
IC/IB = 100
−0.4
0
−0.3 −0.5
−1.0
−2 −3 −5 −10 −20 −30 −50
IC, COLLECTOR CURRENT (mA)
−100 −200 −300
−2.0
TA = 25°C
−1.8
−1.6
−1.4
IC = −10 mA −50 mA −100 mA −175 mA
−1.2
−1.0
−0.8
−0.6
−0.1−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100−200−500 −1K−2K −5K−10K
IB, BASE CURRENT (A)
Figure 3. Collector Saturation Region
−1000
10
VCE = −5.0 V
f = 100 MHz
TA = 25°C
IC, COLLECTOR CURRENT (mA)
|h FE |, HIGH FREQUENCY CURRENT GAIN
Figure 2. “On” Voltage
4.0
3.0
2.0
−300 mA
−300
−200
TA = 25°C
0.4
0.2
−5.0
−10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
−500
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(DUTY CYCLE ≤ 10%) MPSA75
−50
−20
MPSA77
−10
−1.0
−1K
1.0 s
TC = 25°C
−100
1.0
0.1
−1.0 −2.0
100 s
1.0 ms
−2.0
−4.0 −6.0
−10
−20
−40 −60
VCE, COLLECTOR VOLTAGE (VOLTS)
Figure 4. High Frequency Current Gain
Figure 5. Active Region, Safe Operating Area
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3
MPSA75, MPSA77
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPSA75/D
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