BCP030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm) The BeRex BCP030T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 300 micron gate width making the product ideally suited for amplifier applications where high-gain and medium power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCP030T is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. PRODUCT FEATURES • • • • • 25 dBm Typical Output Power 14 dB Typical Gain @12 GHz 65% PAE Typical @12 GHz 0.25 X 300 µm Recessed Gate Also available in 70 mil. ceramic package (BCP030T-70) APPLICATIONS • • • Commercial Military / Hi-Rel. Test & Measurement DC CHARACTERISTICS Ta = 25° C SYMBOL Idss Gm Vp BVgd BVgs Rth PARAMETER/TEST CONDITIONS Saturated Drain Current (Vgs = 0V, Vds = 1.0V) Transconductance (Vds = 2V, Vgs = 50% Idss) Pinch-off Voltage (Ids = 0.3 mA, Vds = 2V) Drain Breakdown Voltage (Ig = 0.3 mA, source open) Source Breakdown Voltage (Ig = 0.3 mA, drain open) Thermal Resistance (Au-Sn Eutectic Attach) MIN. TYPICAL MAX. UNIT 60 90 120 -1.1 -15 -13 121 120 -0.5 -12 mA mS V V V °C/W MIN. TYPICAL MAX. UNIT 24.5 25.5 25.5 14.0 10.5 65 60 -2.5 ELECTRICAL CHARACTERISTICS (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) NF 50 Ohm Noise Figure (Vds=2V, Ids=15 mA) www.berex.com TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz 12 GHz 18 GHz 13.0 12 GHz 1.14 BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7 dBm dB % dB January 2015 BCP030T ELECTRICAL CHARACTERISTICS (TUNED FOR GAIN) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) NF 50 Ohm Noise Figure (Vds=2V, Ids=15 mA) TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz 12 GHz 18 GHz MIN. TYPICAL 22.0 23.0 23.0 15.5 11.5 45 45 14.5 12 GHz MAX. UNIT dBm dB % 1.14 dB MAXIMUM RATINGS (Ta = 25° C) SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE 12 V -6 V Idss 18 mA 22 dBm 175° C -60° C - 150° C 1.4 W CONTINUOUS 8V -3 V Idss 3 mA @ 3dB compression 150° C -60° C - 150° C 1.2 W Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device. PIN_POUT/GAIN, PAE (12 GHz) Frequency = 12GHz Vds = 8 V, Ids = 50% Idss (Tuned for Power) www.berex.com Frequency = 12GHz Vds = 8 V, Ids = 50% Idss (Tuned for Gain) BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7 January 2015 BCP030T PIN_POUT/GAIN, PAE (18 GHz) Frequency = 18GHz Vds = 8 V, Ids = 50% Idss (Tuned for Gain) Frequency = 18GHz Vds = 8 V, Ids = 50% Idss (Tuned for Power) S-PARAMETER (Vds = 8V, Ids = 50% Idss) FREQ. [GHZ] S11 [MAG] S11 [ANG.] S21 [MAG] S21 [ANG.] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 0.97 -27.72 9.10 159.71 0.91 -53.85 8.41 141.85 0.85 -78.65 7.57 126.23 0.79 -100.97 6.73 112.12 0.75 -121.90 5.95 0.73 -139.47 5.24 0.72 -155.99 0.72 0.72 S12 [MAG] S12 [ANG.] S22 [MAG] S22 [ANG.] 0.019 74.59 0.71 -10.54 0.036 61.30 0.66 -19.37 0.048 50.31 0.59 -26.23 0.055 41.94 0.54 -32.00 99.32 0.061 35.64 0.48 -37.41 88.30 0.062 30.97 0.44 -41.98 4.62 77.67 0.062 24.97 0.40 -48.43 -168.99 4.14 68.95 0.063 21.67 0.38 -51.15 -179.97 3.71 61.22 0.060 19.65 0.36 -54.78 0.72 169.20 3.37 53.50 0.060 18.02 0.34 -58.30 0.74 160.38 3.04 46.46 0.060 16.99 0.33 -60.45 0.75 151.34 2.81 39.07 0.059 13.84 0.32 -63.94 0.76 142.18 2.58 32.32 0.059 14.91 0.30 -65.39 0.79 135.08 2.37 25.60 0.059 12.56 0.28 -67.17 0.80 128.26 2.21 19.05 0.060 12.24 0.25 -70.97 0.82 120.51 2.05 12.14 0.061 10.92 0.21 -75.16 0.85 116.46 1.88 5.62 0.060 8.30 0.17 -84.42 0.86 110.04 1.73 -1.49 0.064 5.45 0.13 -99.08 0.88 104.87 1.57 -9.16 0.065 3.39 0.10 -131.69 0.89 103.82 1.43 -14.39 0.066 3.64 0.11 -175.84 0.90 100.91 1.30 -20.35 0.069 1.83 0.17 160.35 0.90 99.40 1.15 -25.89 0.068 1.36 0.24 149.32 0.90 100.87 1.04 -30.07 0.067 -0.48 0.31 142.60 0.90 98.38 0.93 -34.99 0.066 -1.84 0.39 139.62 0.92 99.27 0.83 -38.62 0.068 -0.48 0.45 137.44 0.92 101.85 0.76 -40.47 0.064 4.76 0.49 137.87 Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below. www.berex.com BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7 January 2015 BCP030T WIRE BONDING INFORMATION Follow the wire bonding diagrams recommended by BeRex below to achieve optimum device performance. BeRex recommends thermo-compression wedge bonding. As a general rule, bonding temperature should be kept to a maximum of 280°C for no longer than 2 minutes for all bonding wires. Ultrasonic bonding is not recommended. Using 1 mil. diameter, Au bonding wires. 1. Gate to input transmission line - Length and Height : 600 µm x 250 µm - Number of wire(s): 1 2. Drain to output transmission line - Length and Height : 400 µm x 250 µm - Number of wire(s) : 1 3. Source to ground plate - Length and Height : 250 µm x 300 µm - Number of wire(s) : 4 DIE ATTACH RECOMMENDATIONS: BeRex recommends the “Eutectic” die attach using Au-Sn (80%-20%) pre-forms. The die attach station must have accurate temperature control, and the operation should be performed with parts no hotter than 300°C for less than 10 seconds. An inert forming gas (90% N2-10% H2) or clean, dry N2 should be used. Use of conductive epoxy (gold or silver filled) may also be acceptable for die-attaching low power devices. HANDLING PRECAUTIONS: GaAs FETs are very sensitive to and may be damaged by Electrostatic Discharge (ESD). Therefore, proper ESD precautions must be taken whenever you are handling these devices. It is critically important that all work surfaces, and assembly equipment, as well as the operator be properly grounded when handling these devices to prevent ESD damage. STORAGE & SHIPPING: BeRex’s standard chip device shipping package consists of an antistatic “Gel-Pak”, holding the chips, placed inside a sealed antistatic and moisture barrier bag. This packaging is designed to provide a reasonable measure of protection from both mechanical and ESD damage. Chip devices should be stored in a clean, dry Nitrogen gas environment at room temperature until they are required for assembly. Only open the shipping package or perform die assembly in a work area with a class 10,000 or better clean room environment to prevent contamination of the exposed devices. www.berex.com BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7 January 2015 BCP030T CAUTION: THIS PRODUCT CONTAINS GALLIUM ARSENIDE (GaAs) WHICH CAN BE HAZARDOUS TO THE HUMAN BODY AND THE ENVIRONMENT. THEREFORE, IT MUST BE HANDLED WITH CARE AND IN ACCORDANCE WITH ALL GOVERNMENTAL AND COMPANY REGULATIONS FOR THE SAFE HANDLING AND DISPOSAL OF HAZARDOUS WASTE. DO NOT BURN, DESTROY, CUT, CRUSH OR CHEMICALLY DISSOLVE THE PRODUCT. DO NOT LICK THE PRODUCT OR IN ANY WAY ALLOW IT TO ENTER THE MOUTH. EXCLUDE THE PRODUCT FROM GENERAL INDUSTRIAL WASTE OR GARBAGE AND DISPOSE OF ONLY IN ACCORDANCE TO APPLICABLE LAWS AND/OR ORDINANCES DISCLAIMER BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT THE EXPRESS WRITTEN APPROVAL OF BEREX. 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. For complete specifications, S-parameters and information on bonding and handling, visited our website; www.berex.com 3. www.berex.com BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7 January 2015