DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. 3 handbook, halfpage 3 1 MARKING TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849BW 2B∗ BC850BW 2F∗ BC849CW 2C∗ BC850CW 2G∗ 2 1 2 Top view MAM062 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS BC850W collector-emitter voltage MAX. UNIT open emitter BC849W VCEO MIN. − 30 V − 50 V − 30 V − 45 V − 5 V open base BC849W BC850W VEBO emitter-base voltage IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current Ptot total power dissipation Tstg open collector − 200 mA − 200 mW storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 12 2 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 625 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS − TYP. − MAX. collector cut-off current IE = 0; VCB = 30 V; Tj = 150 °C − − 5 µA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain IC = 2 mA; VCE = 5 V; see Figs 2 and 3 BC849BW; BC850BW 200 − 450 BC849CW; BC850CW 420 − 800 IC = 10 mA; IB = 0.5 mA − − 250 mV IC = 100 mA; IB = 5 mA; note 1 − − 600 mV VBE collector-emitter saturation voltage base-emitter voltage 15 UNIT ICBO VCEsat IE = 0; VCB = 30 V MIN. nA IC = 2 mA; VCE = 5 V 580 − 700 mV IC = 10 mA; VCE = 5 V − − 770 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 3 pF Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz − 11 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz − − 4 dB IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 4 dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 12 3 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W MBH724 300 handbook, full pagewidth VCE = 5 V hFE 200 100 0 10−2 10−1 1 102 10 IC (mA) 103 BC849BW; BC850BW. Fig.2 DC current gain; typical values. MBH725 600 handbook, full pagewidth VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 BC849CW; BC850CW. Fig.3 DC current gain; typical values. 1999 Apr 12 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1999 Apr 12 REFERENCES IEC JEDEC EIAJ SC-70 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 12 6 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W NOTES 1999 Apr 12 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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