PHILIPS BGY135 Vhf power amplifier module Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BGY135; BGY136
VHF power amplifier modules
Product specification
Supersedes data of June 1993
File under Discrete Semiconductors, SC09
1996 May 08
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
FEATURES
PINNING - SOT132B
• 12.5 V nominal supply voltage
PIN
• 18 W output power.
DESCRIPTION
1
RF input
2
ground
APPLICATIONS
3
VS1
• Mobile communication equipment operating directly
from 12 V vehicle electrical systems.
4
ground
5
VS2
6
ground
7
RF output
DESCRIPTION
Flange
The BGY135 and BGY136 are two-stage broadband RF
amplifier modules in a SOT132B package. Each module
consists of two NPN transistor dies together with
lumped-element matching components.
ground
handbook, halfpage
12 3 4
5 67
Top view
MSB029
Fig.1 Simplified outline.
QUICK REFERENCE DATA
TYPE
NUMBER
MODE OF
OPERATION
f
(MHz)
BGY135
CW
132 to 156
BGY136
CW
146 to 174
VS1; VS2
(V)
PD
(mW)
PL
(W)
ZS; ZL
(Ω)
12.5
150
≥18
50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO inserts are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 May 08
2
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VS1
DC supply voltage
−
15.6
V
VS2
DC supply voltage
−
15.6
V
Vi
RF input voltage
−
25
V
Vo
RF output voltage
−
25
V
PD
input drive power
−
300
mW
PL
load power
−
25
W
Tstg
storage temperature
−40
+100
°C
Th
heatsink operating temperature
−20
+90
°C
MRC267
handbook,30
halfpage
PL
(W)
20
10
0
–50
0
50
Th (°C)
100
VS1 = VS2 ≤ 12.5 V; VSWR = 1 : 1.
Fig.2 Power derating curve.
1996 May 08
3
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 150 mW; VS1 = VS2 = 12.5 V; Th = 25 °C; unless otherwise specified.
SYMBOL
f
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
frequency
BGY135
132
−
156
MHz
BGY136
146
−
174
MHz
−
−
1
mA
18
−
−
W
adjust PD for PL = 18 W
38
45
−
%
second harmonic
adjust PD for PL = 18 W
−
−
−25
dBc
third harmonic
adjust PD for PL = 18 W
−
−
−25
dBc
input VSWR
adjust PD for PL = 18 W
−
1.5
3
stability
VS1 = VS2 = 10.8 to 15.6 V;
PL = 2 to 20 W; VSWR = 3 : 1
−
−
−60
ruggedness
PD ≤ 300 mW;
VS1 = VS2 = 15.6 V duration 5 s;
PL < 25 W; VSWR = 50 : 1
IQ2
leakage current
PL
load power
η
efficiency
H2
H3
VSWRin
VS1 = 0; PD = 0
MRC266
35
no degradation
MRC261
handbook, 30
halfpage
handbook,
PLhalfpage
(W)
30
f = 146 MHz
PL
(W)
f=
132 MHz
144 MHz
156 MHz
25
20
dBc
161 MHz
174 MHz
20
15
10
10
5
0
0
0
100
200
PD (mW)
300
200
300
VS1 = VS2 = 12.5 V.
Load power as a function of drive power;
BGY135; typical values.
1996 May 08
100
PD (mW)
VS1 = VS2 = 12.5 V.
Fig.3
0
Fig.4
4
Load power as a function of drive power;
BGY136; typical values.
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
MRC264
60
MRC259
60
handbook, halfpage
handbook, halfpage
η
(%)
η
(%)
40
40
20
20
0
120
130
140
150
0
140
160
150
160
170
VS1 = VS2 = 12.5 V; PL = 18 W.
Fig.5
180
f (MHz)
f (MHz)
VS1 = VS2 = 12.5 V; PL = 18 W.
Efficiency as a function of frequency;
BGY135; typical values.
Fig.6
MRC262
MRC274
30
Efficiency as a function of frequency;
BGY136; typical values.
30
handbook, halfpage
handbook, halfpage
VS = 12.5 V
PL
(W)
PL
(W)
VS = 12.5 V
10.8 V
20
20
10.8 V
10
10
0
120
130
140
150
0
140
160
150
f (MHz)
180
PD = 150 mW.
Load power as a function of frequency;
BGY135; typical values.
1996 May 08
170
f (MHz)
PD = 150 mW.
Fig.7
160
Fig.8
5
Load power as a function of frequency;
BGY136; typical values.
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
MRC265
–20
MRC260
–20
handbook, halfpage
handbook, halfpage
H2, H3
(dBc)
H2, H3
(dBc)
–40
–40
H2
H2
H3
–60
–60
H3
–80
120
140
130
150
–80
140
160
150
160
170
f (MHz)
VS1 = VS2 = 12.5 V; PL = 18 W.
Fig.9
180
f (MHz)
VS1 = VS2 = 12.5 V; PL = 18 W.
Harmonics as a function of frequency;
BGY135; typical values.
Fig.10 Harmonics as a function of frequency;
BGY136; typical values.
MRC268
30
MRC263
25
handbook, halfpage
handbook, halfpage
PL
(W)
PL
(W)
20
132 MHz
146 MHz
156 MHz
20
174 MHz
15
10
10
5
0
−25
0
50
Tmb (°C)
0
–25
100
0
25
50
100
75
Tmb (°C)
PD = 150 mW; VS1 = VS2 = 12.5 V.
PD = 150 mW; VS1 = VS2 = 12.5 V.
Fig.11 Load power as a function of mounting base
temperature; BGY135; typical values.
Fig.12 Load power as a function of mounting base
temperature; BGY136; typical values.
1996 May 08
6
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
Test circuit information
handbook, full pagewidth
pin
numbers
1
2
3
4
C1
5
6
C5
C6
C2
L1
L2
Z1
Z2
C3
C7
C4
C8
IS2 =
typ. 2.5 A
IS1 =
typ. 0.5 A
input
7
VS1
output
VS2
MRC273
Fig.13 Test circuit.
handbook, full pagewidth
90
50
MLB068
Dimensions in mm.
Fig.14 Printed-circuit board layout.
1996 May 08
7
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
List of components (see Fig.13)
COMPONENT
DESCRIPTION
VALUE
CATALOGUE NO
C1, C5
multilayer chip capacitor
1 nF
4822 590 06614
C2, C6
tantalum capacitor
6.8 µF, 35 V
2022 001 00067
C3, C7
multilayer chip capacitor
10 nF
2222 852 47103
C4, C8
multilayer chip capacitor
100 nF
2222 852 47104
L1, L2
1 turn 0.5 mm copper wire on ferrite coil
1 µH
3122 108 20153
Z1, Z2
stripline; note 1
50 Ω
Note
1. The striplines are on a double copper-clad printed-circuit board, with epoxy dielectric (εr = 4.7), thickness 1⁄16 inch.
1996 May 08
8
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
PACKAGE OUTLINE
52.5
50.0
44.9
17.0
14.4
8.1
9.3
6.8
3.7
4.2
0.25
7.65
max
12
34
5
67
19.7
3.3
61.0
A
8.5
17.0 3.5
0.5
0.2 M A
52.5
MBC876
67.5
Dimensions in mm.
Fig.15 SOT132B.
1996 May 08
9
Philips Semiconductors
Product specification
VHF power amplifier modules
BGY135; BGY136
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 08
10
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