HDSEMI FR601 R-6 plastic-encapsulate diode Datasheet

FR601 THRU FR607
R-6 Plastic-Encapsulate Diodes
Fast Recovery Rectifier
Features
●Io
6A
R-6
●VRRM
50V-1000V
●High surge current capability
● Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● FR60X
X:From 1 to 7
FR6
Item
Conditions
Symbol
Unit
Repetitive Peak Reverse Voltage
VRRM
V
Average Forward Current
IF(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=50℃
Surge(Non-repetitive)Forward
Current
IFSM
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
TJ
℃
-55~+125
TSTG
℃
-55 ~ +150
Junction Temperature
Storage Temperature
01
02
03
04
05
06
07
50
100
200
400
600
800
1000
06
07
6
200
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
FR6
Item
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery time
Thermal
Resistance(Typical)
Typical junction
capacitance
Symbol
Unit
VFM
V
IRRM1
IRRM2
μA
Test Condition
01
02
03
IFM=6.0A
04
1.3
Ta=25℃
2.5
Ta=125℃
IF=0.5A IR=1A
IRR=0.25A
100
VRM=VRRM
05
trr
ns
RθJ-A
℃/W
Between junction and ambient
10
Cj
pF
Measured at 1MHZ and Applied
Reverse Voltage of 4.0 V.D.C.
100
High Diode Semiconductor
150
250
500
1
Typical Characteristics
FIG.2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
︵ ︶
A
IFSM
︶
IO(A
0
.
6
FIG.1 FORWARD CURRENT DERATING CURVE
200
8
.
4
170
140
6
.
2
8.3ms Single Half Sine Wave
JEDEC Method
110
4
.
2
90
S
2
.
1
0
30
0
0
0
1
0
60
ingle Phase
Half Wave 60HZ
Resisteve or
Inductive Load
0.375''(9.5mm)
Lead Length
50
150
Ta(℃)
2
4
6
8 10
20
40
60 80 100
Number of Cycles
IR(uA)
IF(A)
FIG.3 TYPICAL FORWARD CHARACTERISTICS
100
1
FIG.4 TYPICAL REVERSE CHARACTERISTICS
100
Tj =125℃
10
10
Tj=100℃
1.0
1.0
0.1
0.1
0.01
0.6
TJ=25℃
Pulse width=300us
1% Duty Cycle
0.8
1.2
1.0
1.6
1.4
1.8
Tj=25℃
0.01
2.0
0.001
0
20
40
60
VF(V)
80
100
Voltage(%)
Diagram of circuit and Testing wave form of reverse recovery time
10Ω
50Ω
+0.5
(-)
(+)
(-)
-0.25
1Ω
=7
=10
.
(+)
=1 Ω 22
Ω
-1.0
/
High Diode Semiconductor
2
.052(1.32)
.047(1.20)
DIA
.340(8.60)
DIA
1.0(25.4)
MIN
.360(9.10)
1.0(25.4)
MIN
.360(9.10)
.340(8.60)
R-6
Unit: in inches (millimeters)
JSHD
JSHD
High Diode Semiconductor
3
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High Diode Semiconductor
4
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