Preliminary HS6472-20A GaN Hybrid Power Amplifier Product Features Applications • GaN on SiC HEMT • In/Out Impedance Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency • Low Cost • Point to Point • Radio system Package Type : NP-18 Description The HS6472-20A is designed for Radio system application frequencies from 6400MHz to 7200MHz. This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, high power density. Electrical Specifications ; Vgs@Idq=150mA, Vds =40V, Ta=25℃, 50ohm System PARAMETER UNIT MIN TYP MAX CONDITION Operating Frequency MHz 6400 - 7200 ZS = ZL = 50ohm Operating Bandwidth MHz - 800 - - Input Return Loss dB - -8 - - Output Pulse Power @ P4dB dBm - 44.5 - Input Pulse Power dBm - 34 - Power Gain @ P4dB dB - 10.5 - Gain Flatness dB - 1.8 - Efficiency % - 45 - IMD dBc - 30 - Pulse Width =100us Duty cycle = 10% Δf=1MHz, IM3 test @Pout=35dBm (*S.C.L) Idq=50mA Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain Voltage and last turn off the Gate voltage Note HS Series have internal DC blocking capacitors at the RF input and output ports *S.C.L : Single Carrier Level Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 1/6 Version 0.2 Preliminary HS6472-20A GaN Hybrid Power Amplifier Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 1 - Dimension ㎜ 15 x 10 x 5.4 - PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs Drain-Source Voltage V 50 Vds Gate Current mA 4.8 Ig Operating Junction Temperature °C 250 TJ Operating Case Temperature °C -40 ~ 65 TC Storage Temperature °C -40 ~ 100 TSTG Absolute Maximum Ratings Operating Voltages PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V - 40 - Vds Gate Voltage (on-stage) V - Vgs@Idq -2 Vgs Gate Voltage (off-stage) V - -8 - Vgs Block Diagram Input Input Matching Circuit Output Matching Circuit -Vgs +Vds Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] Output All specifications may change without notice 2/6 Version 0.2 Preliminary GaN Hybrid Power Amplifier HS6472-20A Performance Charts * Test condition: Test Frequency = 6.4GHz - 7.2GHz, Vgs@Idq = 150mA, Vds = +40V, Ta = 25℃ Output Power vs. Frequency Drain Efficiency vs. Frequency Power Gain vs. Frequency Current vs. Frequency Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 3/6 Version 0.2 Preliminary HS6472-20A GaN Hybrid Power Amplifier Package Dimensions (Type: NP-18) * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function 1 GND 3 GND 5 RF Output 7 Drain Bias (+Vds) 2 RF Input 4 GND 6 GND 8 Gate Bias (-Vgs) Recommended Pattern * Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 4/6 Version 0.2 Preliminary GaN Hybrid Power Amplifier HS6472-20A Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs 3. Apply Vds 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds, and then, turn off the Vgs 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram - Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 5/6 Version 0.2 Preliminary GaN Hybrid Power Amplifier HS6472-20A Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Measured reflow profile Ordering Information Part Number Package Design -R (Reel) -B (Bulk) HS6472-20A -EVB (Evaluation Board) Revision History Part Number Release Date Version Modification Data Sheet Status HS6472-20A 14.06.26 0.2 A mass of mechanical specification is changed. Preliminary HS6472-20A 14.04.25 0.1 New release. Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078. Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 6/6 Version 0.2