Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 1/10 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N65BFP BVDSS ID @ VGS=10V, TC=25°C 650V RDSON(TYP) @ VGS=10V, ID=6A 10A 0.54Ω Description The MTN10N65BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Open Framed Power Supply • Adapter • STB Ordering Information Device MTN10N65BFP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN10N65BFP CYStek Product Specification Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 2/10 CYStech Electronics Corp. Symbol Outline MTN10N65BFP TO-220FP G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS IDM IAS EAS EAR dv/dt 650 ±30 10* 6.3* 40* 10 215 6 4.5 V/ns TL 300 °C PD 66 0.53 -55~+150 W W/°C °C ID Tj, Tstg Unit V A mJ *Drain current limited by maximum junction temperature *100% UIS testing in condition of VD=50V, L=4.3mH, VG=10V, IL=10A, Rated VDS=650V Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=10A, VDD=50V, L=4.3mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤10A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. MTN10N65BFP CYStek Product Specification Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 3/10 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 1.9 62.5 Unit °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 650 2.0 - 0.6 16 0.54 4.0 ±100 1 10 0.75 V V/°C V S nA Ω VGS=0V, ID=250μA, Tj=25℃ Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=6A VGS=±30V VDS =650V, VGS =0V VDS =520V, VGS =0V, Tj=125°C VGS =10V, ID=6A 54.2 9.6 22.2 21.2 18.2 81.8 25.8 1920 178 24 2 - nC ID=10A, VDD=520V, VGS=10V ns VDD=325V, ID=10A, VGS=10V, RG=9.1Ω pF VGS=0V, VDS=25V, f=1MHz Ω f=1MHz 0.78 411 3.3 1.5 10 40 - V IS=6A, VGS=0V *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *VSD *IS *ISM *trr *Qrr - μA A ns μC VGS=0V, IF=10A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN10N65BFP CYStek Product Specification Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 4/10 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 36 10V,9V,8V,7V 32 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage 40 6V 28 24 20 5.5 V 16 12 8 1.2 1.0 0.8 ID=250μA, VGS=0V 5V 4 VGS=4.5V 0 0 10 20 30 VDS, Drain-Source Voltage(V) 0.6 40 -75 50 -50 25 50 75 100 125 150 175 Drain Current vs Gate-Source Voltage 35 1000 900 800 700 600 500 400 300 200 VDS=30V Ta=25°C 30 VGS=10V ID, Drain Current(A) R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 TA, Ambient Temperature(°C) Static Drain-Source On-State resistance vs Drain Current 25 20 VDS=10V 15 10 5 100 0 0 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 VGS, Gate-Source Voltage(V) 10 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 2000 1800 1600 IF, Forward Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) -25 1400 1200 1000 800 600 VGS=0V 10 1 Ta=150°C Ta=25°C 0.1 0.01 400 ID=6A 200 Ta=25°C 0.001 0 0 2 4 6 VGS, Gate-Source Voltage(V) MTN10N65BFP 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Source Drain Voltage(V) CYStek Product Specification Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 5/10 CYStech Electronics Corp. Typical Characteristics(Cont.) Capacitance vs Reverse Voltage Static Drain-Source On-resistance vs Ambient Temperature 10000 RDS(ON), Normalized Static Drain-Source On-state Resistance 3.0 Capacitance(pF) Ciss 1000 Coss 100 Crss f=1MHz 10 ID=6A, VGS=10V 2.5 2.0 1.5 1.0 0.5 RDS(ON) @Tj=25°C:0.54Ω typ. 0.0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage(V) 30 -75 -50 -25 Gate Charge Characteristics Maximum Safe Operating Area 10 10 μs 10 VDS=130V 100μs VGS, Gate-Source Voltage(V) ID, Drain Current(A) 100 RDS(ON) Limited 1ms 10ms 1 100ms DC TC=25°C, Tj(max)=150°C VGS=10V, RθJC =1.9°C/W Single pulse 0.1 8 VDS=325V 6 VDS=520V 4 2 ID=10A 0 0.01 1 10 100 0 1000 12 18 24 30 36 42 48 54 Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Threshold Voltage vs Junction Tempearture VGS(th), Normalized Threshold Voltage 10 8 6 4 2 6 VDS, Drain-Source Voltage(V) 12 ID, Maximum Drain Current(A) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) VGS=10V, RθJC =1.9°C/W 60 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 0 25 50 75 100 125 TC, Case Temperature(°C) MTN10N65BFP 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 6/10 Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Power Rating, Junction to Case 100 GFS , Forward Transfer Admittance(S) 2000 1800 TJ(MAX) =150°C TC=25°C RθJC =1.9°C/W 1600 Power (W) 1400 1200 1000 800 600 400 200 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 10 1 VDS=15V 0.1 0.01 0.001 Ta=25°C Pulsed 0.01 0.1 1 ID, Drain Current(A) 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.9 ° C/W 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 MTN10N65BFP 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 7/10 Test Circuits and Waveforms MTN10N65BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 8/10 Test Circuits and Waveforms(Cont.) MTN10N65BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 9/10 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN10N65BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C114FP Issued Date : 2015.07.12 Revised Date : Page No. : 10/10 TO-220FP Dimension Marking: Device Name Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.171 0.183 0.051 REF 0.112 0.124 0.102 0.110 0.020 0.030 0.031 0.041 0.047 REF 0.020 0.030 0.396 0.404 0.583 0.598 0.100 * 0.106 REF DIM A A1 A2 A3 b b1 b2 c D E e F Millimeters Min. Max. 4.35 4.65 1.300 REF 2.85 3.15 2.60 2.80 0.50 0.75 0.80 1.05 1.20 REF 0.500 0.750 10.06 10.26 14.80 15.20 2.54* 2.70 REF DIM G H H1 H2 J K L L1 L2 M N Inches Min. Max. 0.246 0.258 0.138 REF 0.055 REF 0.256 0.272 0.031 REF 0.020 1.102 1.118 0.043 0.051 0.036 0.043 0.067 REF 0.012 REF Millimeters Min. Max. 6.25 6.55 3.50 REF 1.40 REF 6.50 6.90 0.80 REF 0.50 REF 28.00 28.40 1.10 1.30 0.92 1.08 1.70 REF 0.30 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN10N65BFP CYStek Product Specification