Transistors SMD Type PNP Transistors BCX51、BCX52、BCX53 （KCX51、KCX52、KCX53） 1.70 Features 0.1 ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60 V BCX53 -100 V -45 V BCX52 -60 V BCX53 -80 V BCX51 BCX51 VCEO VEBO -5 V Collector current IC -1 A Peak collector current ICM -1.5 A Emitter-base voltage Peak base current IBM -200 mA Total power dissipation Ptot 1.3 W Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature T amb -65 to +150 Thermal resistance from junction to ambient Rth(j-a) 94 K/W Thermal resistance from junction to solder point Rth(j-s) 14 K/W www.kexin.com.cn 1 Transistors SMD Type BCX51、BCX52、BCX53 （KCX51、KCX52、KCX53） Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Testconditions Min -100 nA -10 uA -100 nA VEB = -5 V, IC = 0 DC current gain hFE IC = -5 mA; VCE = -2 V 63 BCX51-16,BCX52-16,BCX53-16 Collector-emitter saturation voltage IC = -150 mA; VCE = -2 V 63 IC = -500 mA; VCE = -2 V 40 IC = -150 mA; VCE = -2 V 63 160 IC = -150 mA; VCE = -2 V 100 250 VCE(sat) IC = -500 mA; IB = -50 mA VBE IC = -500 mA; VCE = -2 V Base to emitter voltage Transition frequency fT 250 -500 -1 IC = -10 mA; VCE = -5 V; f = 100 MHz 50 BCX51 BCX51-10 BCX51-16 Marking AA AC AD TYPE BCX52 BCX52-10 BCX52-16 Marking AE AG AM TYPE BCX53 BCX53-10 BCX53-16 Marking AH AK AL ■ Typical Characterisitics MBH730 160 handbook, full pagewidth － hFE VCE = 2 V 120 80 40 0 －10－1 －1 －10 －102 Fig.1 DC current gain; typical values. 2 www.kexin.com.cn －103 IC (mA) mV V MHz hFE Classification TYPE Unit VCB = -30 V, IE = 0 IEBO hFE Max VCB = -30 V, IE = 0; Tj = 125 Emitter cutoff current DC current gain BCX51-10,BCX52-10,BCX53-10 Typ －104